DMN32D2LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • SOT-563 ESD PROTECTED Maximum Ratings G1 S1 S2 G2 D1 TOP VIEW Schematic and Transistor Diagram TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS ID Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current PD RθJA TJ, TSTG Unit V V mA 400 313 -55 to +150 mW °C/W °C @TA = 25°C unless otherwise specified @ TC = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ IGSS ⎯ ⎯ ⎯ 1 ±10 ±500 V μA μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VGS(th) 0.6 |Yfs| VSD ⎯ ⎯ ⎯ 100 0.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDS = VGS, ID = 250μA VGS = 1.8V, ID = 20mA VGS = 2.5V, ID = 20mA VGS = 4.0V, ID = 100mA VDS =10V, ID = 0.1A VGS = 0V, IS = 115mA Ciss Coss Crss ton toff ⎯ ⎯ ⎯ ⎯ ⎯ 39 10 3.6 11 51 RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Time Value 30 ±10 400 @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: D2 Turn-on Time Turn-off Time 1.2 V 2.2 1.5 1.2 Ω ⎯ 1.4 mS V ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nS nS Test Condition VDS = 3V, VGS = 0V f = 1.0MHz VDD = 5V, ID = 10 mA, VGS = 5V 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN32D2LV Document number: DS31121 Rev. 6 - 2 1 of 5 www.diodes.com April 2010 © Diodes Incorporated DMN32D2LV DMN32D2LV Document number: DS31121 Rev. 6 - 2 2 of 5 www.diodes.com April 2010 © Diodes Incorporated DMN32D2LV RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = 4V ID = 100mA 1.4 VGS = 2.5V ID = 20mA VGS = 1.8V ID = 20mA 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C°) Fig. 7 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 50 f = 1 MHz 40 CT, CAPACITANCE (pF) Ciss 30 20 10 Coss Crss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance 20 Ordering Information (Note 5) Part Number DMN32D2LV-7 Notes: Case SOT-563 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 6) D2 G1 S1 DV = Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) DV YM S2 Notes: G2 D1 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year Code Month Code 2007 U Jan 1 DMN32D2LV Document number: DS31121 Rev. 6 - 2 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 3 of 5 www.diodes.com Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D April 2010 © Diodes Incorporated DMN32D2LV Package Outline Dimensions A B SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMN32D2LV Document number: DS31121 Rev. 6 - 2 4 of 5 www.diodes.com April 2010 © Diodes Incorporated DMN32D2LV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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