CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • Breakdown Voltage, 5300 VRMS • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 NC C 2 5 C NC 3 4 E e3 18216 Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • BSI IEC60950 IEC60065 • FIMKO Description The CNY17F is an optocoupler consisting af a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 Series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity. Document Number 83607 Rev. 1.5, 26-Oct-04 Pb Pb-free Order Information Part Remarks CNY17F-1 CTR 40 - 80 %, DIP-6 CNY17F-2 CTR 63 - 125 %, DIP-6 CNY17F-3 CTR 100 - 200 %, DIP-6 CNY17F-4 CTR 160 - 320 %, DIP-6 CNY17F-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6) CNY17F-1X007 CTR 40 - 80 %, SMD-6 (option 7) CNY17F-1X009 CTR 40 - 80 %, SMD-6 (option 9) CNY17F-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6) CNY17F-2X007 CTR 63 - 125 %, SMD-6 (option 7) CNY17F-2X009 CTR 63 - 125 %, SMD-6 (option 9) CNY17F-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6) CNY17F-3X007 CTR 100 - 200 %, SMD-6 (option 7) CNY17F-3X009 CTR 100 - 200 %, SMD-6 (option 9) CNY17F-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6) CNY17F-4X007 CTR 160 - 320 %, SMD-6 (option 7) CNY17F-4X009 CTR 160 - 320 %, SMD-6 (option 9) For additional information on the available options refer to Option Information. www.vishay.com 1 CNY17F Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.0 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW Symbol Value Unit BVCEO 70 V IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 5300 VRMS Surge forward current Test condition t ≤ 10 µs Power dissipation Unit Output Parameter Test condition Collector-emitter breakdown voltage Collector current t ≤ 1.0 ms Total power dissipation Coupler Parameter Test condition Isolation test voltage (between emitter and detector referred to standard climate 23/50 DIN 50014) Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Isolation resistance VIO = 500 V Junction temperature Soldering temperature www.vishay.com 2 max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reserve current VR = 6.0 V IR 0.01 Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Rth 750 K/W Thermal resistance V 6.0 V µA 10 Output Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Base - collector capacitance VCE = 5.0 V, f = 1.0 MHz CBC 6.5 pF Emitter - base capacitance VCE = 5.0 V, f = 1.0 MHz CEB 7.5 pF Rth 500 K/W Thermal resistance Coupler Parameter Saturation voltage, collectoremitter Test condition Part IF = 10 mA, IC = 2.5 mA VCE = 10 V Typ. Max Unit VCEsat Min 0.25 0.4 V 50 nA CC 0.6 CNY17F-1 ICEO 2.0 CNY17F-2 ICEO 2.0 50 nA CNY17F-3 ICEO 5.0 100 nA CNY17F-4 ICEO 5.0 100 nA Typ. Coupling capacitance Collector-emitter leakage current Symbol pF Current Transfer Ratio Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number Parameter Current Transfer Ratio Test condition IF = 10 mA IF = 1.0 mA Document Number 83607 Rev. 1.5, 26-Oct-04 Part Symbol Min Max Unit CNY17F-1 CTR 40 80 % CNY17F-2 CTR 63 125 % CNY17F-3 CTR 100 200 % 320 % CNY17F-4 CTR 160 CNY17F-1 CTR 13 30 % CNY17F-2 CTR 22 45 % CNY17F-3 CTR 34 70 % CNY17F-4 CTR 56 90 % www.vishay.com 3 CNY17F Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 W ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 W tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 W toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 W tf 2.0 µs Cut-off frequency IF = 10 mA, VCC = 5.0 V, RL = 75 W fCO 250 kHz Switching operation (with saturation) Parameter Turn-on time Rise time Turn-off time Fall time Part Symbol IF = 20 mA Test condition CNY17F-1 ton Min Typ. 3.0 Max Unit µs IF = 10 mA CNY17F-2 ton 4.2 µs CNY17F-3 ton 4.2 µs IF = 5.0 mA CNY17F-4 ton 6.0 µs IF = 20 mA CNY17F-1 tr 2.0 µs IF = 10 mA CNY17F-2 tr 3.0 µs CNY17F-3 tr 3.0 µs IF = 5.0 mA CNY17F-4 tr 4.6 µs IF = 20 mA CNY17F-1 toff 18 µs IF = 10 mA CNY17F-2 toff 23 µs CNY17F-3 toff 23 µs IF = 5.0 mA CNY17F-4 toff 25 µs IF = 20 mA CNY17F-1 tf 11 µs IF = 10 mA CNY17F-2 tf 14 µs CNY17F-3 tf 14 µs CNY17F-4 tf 15 µs IF = 5.0 mA Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF RL=75 Ω IC IF VCC=5 V VCC=5 V 45 Ω icny17f_01 47 Ω icny17f_02 Figure 1. Linear Operation ( without Saturation) www.vishay.com 4 1 KΩ Figure 2. Switching Operation (with Saturation) Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors (TA = –25°C, VCE = 5.0 V) IC/IF = f (IF) (TA = 50°C, VCE = 5.0 V) 1 2 3 4 1 2 3 4 A icny17f_06 icny17f_03 Figure 6. Current Transfer Ratio vs. Diode Current Figure 3. Current Transfer Ratio vs. Diode Current (TA = 75°C, VCE = 5.0 V) (TA = 0°C, VCE = 5.0 V) IC/IF = f (IF) 1 2 3 4 icny17f_04 1 2 3 4 icny17f_07 Figure 7. Current Transfer Ratio vs. Diode Current Figure 4. Current Transfer Ratio vs. Diode Current (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) (TA = 25°C, VCE = 5.0 V) IC/IF = f (IF) 4 3 2 1 2 3 4 icny17f_05 Figure 5. Current Transfer Ratio vs. Diode Current Document Number 83607 Rev. 1.5, 26-Oct-04 1 icny17f_08 A Figure 8. Current Transfer Ratio (CTR) vs. Temperature www.vishay.com 5 CNY17F Vishay Semiconductors VCEsat = f (IC) (TA = 25°C) (TA = 25°C) IC = f (VCE) icny17f_09 icny17f_12 Figure 9. Output Characteristics CNY17F-2, -3 Figure 12. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-1 VF = f (IF) icny17f_10 VCEsat = f (IC) (TA = 25°C) icny17f_13 Figure 10. Forward Voltage Figure 13. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-2 VCEsat = f (IC) (TA = 25°C) ICEO = f (V,T) (TA = 75°C, IF = 0) icny17f_14 icny17f_11 Figure 11. Collector-Emitter off-state Current www.vishay.com 6 Figure 14. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-3 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors IF = f (TA) V VCEsat = f (IC) (TA = 25°C) icny17f_18 icny17f_15 Figure 18. Permissible Forward Current Diode Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-4 C=f (VO) (TA= 25°C, f=1.0 MHz) D=parameter, TA = 25°C, IF=f(tp) icny17f_19 icny17f_16 Figure 16. Permissible Pulse Load Figure 19. Transistor Capacitance Ptot = f (TA) icny17f_17 Figure 17. Permissible Power Dissipation for Transistor and Diode Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 7 CNY17F Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) www.vishay.com 8 .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83607 Rev. 1.5, 26-Oct-04 CNY17F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83607 Rev. 1.5, 26-Oct-04 www.vishay.com 9