BA782-V, BA783-V Vishay Semiconductors Band Switching Diodes FEATURES • These diodes are also available in SOD-323 case with the type designations BA782S-V and BA783S-V • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 MECHANICAL DATA Case: SOD-123 DESCRIPTION Weight: approx. 10.3 mg Silicon epitaxial planar diode switches For electric bandswitching in radio and TV tuners in the frequency range of (50 to 1000) MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING REMARKS BA782-V BA782-V-GS18 or BA782-V-GS08 R2 Tape and reel BA783-V BA783-V-GS18 or BA783-V-GS08 R3 Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITIONS VR 35 UNIT V Forward continuous current IF 100 mA SYMBOL VALUE UNIT Tj 125 °C Tstg - 55 to + 150 °C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA f = 1 MHz, VR = 1 V CD1 1.5 pF BA782-V CD2 1.25 pF BA783-V CD2 1.2 pF BA782-V rf1 0.7 Ω BA783-V rf1 1.2 Ω BA782-V rf2 0.5 Ω Diode capacitance f = 1 MHz, VR = 3 V f = (50 to 1000) MHz, IF = 3 mA Dynamic forward resistance f = (50 to 1000) MHz, IF = 10 mA Series inductance across case Document Number: 85708 Rev. 1.4, 05-Aug-10 BA783-V rf2 LS 0.9 2.5 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Ω nH www.vishay.com 1 BA782-V, BA783-V Band Switching Diodes Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.8 rf - Dynamic Forward Resistance (Ω) CD - Diode Capacitance (pF) 2.0 Tj = 25 °C f = 1 MHz 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 18798 1 10 BA783-V 100 MHz 1 BA782-V 100 MHz 0.1 100 10 BA782-V, BA783-V 1 kHz Tamb = 25 °C 1 VR - Reverse Voltage (V) 10 18799 Fig. 1 - Diode Capacitance 100 IF - Forward Current (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number: 85708 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 2 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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