AD AD8014ARZ-REEL 400 mhz low power high performance amplifier Datasheet

a
FEATURES
Low Cost
Low Power: 1.15 mA Max for 5 V Supply
High Speed
400 MHz, –3 dB Bandwidth (G = +1)
4000 V/␮s Slew Rate
60 ns Overload Recovery
Fast Settling Time of 24 ns
Drive Video Signals on 50 ⍀ Lines
Very Low Noise
3.5 nV/√Hz and 5 pA/√Hz
5 nV/√Hz Total Input Referred Noise @ G = +3 w/500 ⍀
Feedback Resistor
Operates on +4.5 V to +12 V Supplies
Low Distortion –70 dB THD @ 5 MHz
Low, Temperature-Stable DC Offset
Available in SOIC-8 and SOT-23-5
APPLICATIONS
Photo-Diode Preamp
Professional and Portable Cameras
Hand Sets
DVD/CD
Handheld Instruments
A-to-D Driver
Any Power-Sensitive High Speed System
PRODUCT DESCRIPTION
The AD8014 is a revolutionary current feedback operational
amplifier that attains new levels of combined bandwidth, power,
output drive and distortion. Analog Devices, Inc. uses a proprietary circuit architecture to enable the highest performance
amplifier at the lowest power. Not only is it technically superior,
but is low priced, for use in consumer electronics. This general
purpose amplifier is ideal for a wide variety of applications
including battery operated equipment.
400 MHz Low Power
High Performance Amplifier
AD8014
FUNCTIONAL BLOCK DIAGRAMS
SOIC-8 (R)
SOT-23-5 (RT)
NC 1
8 NC
–IN
7 +VS
2
6 VOUT
+IN 3
–VS 4
AD8014
5 NC
AD8014
VOUT 1
5
+VS
4
–IN
–VS 2
+IN 3
NC = NO CONNECT
The AD8014 is a very high speed amplifier with 400 MHz,
–3 dB bandwidth, 4000 V/µs slew rate, and 24 ns settling time.
The AD8014 is a very stable and easy to use amplifier with fast
overload recovery. The AD8014 has extremely low voltage and
current noise, as well as low distortion, making it ideal for use
in wide-band signal processing applications.
For a current feedback amplifier, the AD8014 has extremely
low offset voltage and input bias specifications as well as low
drift. The input bias current into either input is less than 15 µA
at +25°C with a typical drift of less than 50 nA/°C over the
industrial temperature range. The offset voltage is 5 mV max
with a typical drift less than 10 µV/°C.
For a low power amplifier, the AD8014 has very good drive
capability with the ability to drive 2 V p-p video signals on
75 Ω or 50 Ω series terminated lines and still maintain more
than 135 MHz, 3 dB bandwidth.
Rev. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/461-3113
© Analog Devices, Inc., 2010
AD8014–SPECIFICATIONS (@ T = +25ⴗC, V = ⴞ5 V, R = 150 ⍀, R = 1 k⍀, Gain = +2, unless otherwise noted)
A
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal
–3 dB Bandwidth Large Signal
0.1 dB Small Signal Bandwidth
0.1 dB Large Signal Bandwidth
Slew Rate, 25% to 75%, VO = 4 V Step
Settling Time to 0.1%
Rise and Fall Time 10% to 90%
Overload Recovery to Within 100 mV
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
SFDR
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
Third Order Intercept
S
L
F
AD8014AR/RT
Min
Typ
Max
Conditions
G = +1, VO = 0.2 V p-p, RL = 1 kΩ
G = –1, VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
VO = 2 V p-p, RF = 500 Ω
VO = 2 V p-p, RF = 500 Ω, RL = 50 Ω
VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p, RL = 1 kΩ
RL = 1 kΩ, RF = 500 Ω
RL = 1 kΩ
G = –1, RL = 1 kΩ, RF = 500 Ω
G = –1, RL = 1 kΩ
G = +1, VO = 2 V Step, R L = 1 kΩ
2 V Step
G = –1, 2 V Step
0 V to ±4 V Step at Input
400
120
140
170
fC = 5 MHz, VO = 2 V p-p, RL = 1 kΩ
fC = 5 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
f = 10 kHz
f = 10 kHz
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
f = 10 MHz
DC PERFORMANCE
Input Offset Voltage
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short Circuit Current
Capacitive Load Drive for 30% Overshoot
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
480
160
180
210
130
12
20
4600
2800
4000
2500
24
1.6
2.8
60
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
V/µs
V/µs
ns
ns
ns
ns
–68
–51
–45
–48
3.5
5
0.05
0.46
0.30
0.60
22
dB
dB
dB
dB
nV/√Hz
pA/√Hz
%
%
Degree
Degree
dBm
800
2
2
10
5
50
5
1300
VCM = ±2.5 V
± 3.8
–52
450
2.3
± 4.1
–57
kΩ
pF
V
dB
RL = 150 Ω
RL = 1 kΩ
VO = ± 2.0 V
± 3.4
± 3.6
40
± 3.8
± 4.0
50
70
40
V
V
mA
mA
pF
± 2.25
±5
1.15
–58
TMIN–TMAX
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Open Loop Transresistance
Units
+Input or –Input
+Input
+Input
2 V p-p, RL = 1 kΩ, RF = 500 Ω
± 4 V to ± 6 V
–55
5
6
15
± 6.0
1.3
mV
mV
µV/°C
µA
nA/°C
±µA
kΩ
V
mA
dB
Specifications subject to change without notice.
–2–
Rev. C
AD8014
SPECIFICATIONS (@ T = +25ⴗC, V = +5 V, R = 150 ⍀, R = 1 k⍀, Gain = +2, unless otherwise noted)
A
Parameter
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal
–3 dB Bandwidth Large Signal
0.1 dB Small Signal Bandwidth
0.1 dB Large Signal Bandwidth
Slew Rate, 25% to 75%, VO = 2 V Step
Settling Time to 0.1%
Rise and Fall Time 10% to 90%
Overload Recovery to Within 100 mV
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
SFDR
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
Third Order Intercept
S
L
F
Conditions
Min
G = +1, VO = 0.2 V p-p, RL = 1 kΩ
G = –1, VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
VO = 2 V p-p, RF = 500 Ω
VO = 2 V p-p, RF = 500 Ω, RL = 75 Ω
VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
RL = 1 kΩ, RF = 500 Ω
RL = 1 kΩ
G = –1, RL = 1 kΩ, RF = 500 Ω
G = –1, RL = 1 kΩ
G = +1, VO = 2 V Step, RF = 1 kΩ
2 V Step
G = –1, 2 V Step
0 V to ±2 V Step at Input
345
100
75
90
fC = 5 MHz, VO = 2 V p-p, RL = 1 kΩ
fC = 5 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
f = 10 kHz
f = 10 kHz
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
f = 10 MHz
DC PERFORMANCE
Input Offset Voltage
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short Circuit Current
Capacitive Load Drive for 30% Overshoot
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
430
135
100
115
100
10
20
3900
1100
1800
1100
24
1.9
2.8
60
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
V/µs
V/µs
ns
ns
ns
ns
–70
–51
–45
–47
3.5
5
0.06
0.05
0.03
0.30
22
dB
dB
dB
dB
nV/√Hz
pA/√Hz
%
%
Degree
Degree
dBm
750
VCM = 1.5 V to 3.5 V
1.2
–52
450
2.3
1.1 to 3.9
–57
RL = 150 Ω to 2.5 V
RL = 1 kΩ to 2.5 V
VO = 1.5 V to 3.5 V
1.4
1.2
30
1.1 to 3.9
0.9 to 4.1
50
70
55
3.6
3.8
V
V
mA
mA
pF
4.5
5
1.0
–58
12
1.15
V
mA
dB
+Input or –Input
+Input
+Input
2 V p-p, RL = 1 kΩ, RF = 500 Ω
4 V to 5.5 V
–55
Specifications subject to change without notice.
Rev. C
Units
2
2
10
5
50
5
1300
TMIN–TMAX
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
Open Loop Transresistance
AD8014AR/RT
Typ
Max
–3–
5
6
15
3.8
mV
mV
µV/°C
µA
nA/°C
±µA
kΩ
kΩ
pF
V
dB
AD8014
ABSOLUTE MAXIMUM RATINGS 1
plastic. This is approximately +150°C. Even temporarily exceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C may result in
device failure.
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
The output stage of the AD8014 is designed for large load current capability. As a result, shorting the output to ground or to
power supply sources may result in a very large power dissipation. To ensure proper operation it is necessary to observe the
maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
2
Specification is for device in free air at 25°C.
8-Lead SOIC Package θJA = 155°C/W.
5-Lead SOT-23 Package θ JA = 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
Ambient Temp
ⴗC
Power Watts
SOT-23-5
Power Watts
SOIC
–40
–20
0
+20
+40
+60
+80
+100
0.79
0.71
0.63
0.54
0.46
0.38
0.29
0.21
1.19
1.06
0.94
0.81
0.69
0.56
0.44
0.31
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8014 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
Rev. C
Typical Performance Characteristics– AD8014
15
2.0
G = +1
VO = 200mV p-p
NORMALIZED GAIN – dB
1.0
RF = 1kV
9
VS = 65V
RL = 1kV
6
VS = +5V
0
–2.0
–3
–6
–3.0
VO = 1V
–4.0
VO = 2V
–9
–5.0
–12
–6.0
1
10
100
FREQUENCY – MHz
–7.0
1000
Figure 1. Frequency Response, G = +1, VS = ± 5 V and +5 V
3
VS = 65V
G = +2
RF = 500V
VO = 2V p-p
0
–3
NORMALIZED GAIN – dB
NORMALIZED GAIN – dB
RL = 1kV
1
10
100
FREQUENCY – MHz
1000
9
6
RL = 75V
RL = 50V
–6
–9
–12
–15
VO = 0.5V p-p
6
1
10
100
FREQUENCY – MHz
0
VO = 2V p-p
–3
VS = +5V
–6
–12
1000
VO = 1V p-p
3
G = +2
RF = 1kV
–9
Figure 2. Frequency Response, G = +2, VO = 2 V p-p
RL = 1kV
1
VO = 3V p-p
10
100
FREQUENCY – MHz
1000
Figure 5. Bandwidth vs. Output Level—Single Supply,
G = +2
12
2
9
1
VO = 0.5V p-p
6
3
VO = 4V p-p
0
–3
VO = 2V p-p
VS = 65V
–6
G = +2
RF = 1kV
–9
–1
–2
–3
VO = 4V p-p
–4
–5
VS = +5V
–7
100
FREQUENCY – MHz
–8
1000
VO = 2V p-p
G = –1
RF = 1kV
–6
RL = 1kV
10
VO = 0.5V p-p
0
VO = 1V p-p
NORMALIZED GAIN – dB
NORMALIZED GAIN – dB
VO = 4V
12
9
RL = 1kV
1
VO = 0.2V p-p
10
100
FREQUENCY – MHz
1000
Figure 6. Bandwidth vs. Output Level—Single Supply,
Gain of –1
Figure 3. Bandwidth vs. Output Voltage Level—
Dual Supply, G = +2
Rev. C
VS = 65V
G = –1
RF = 1kV
Figure 4. Bandwidth vs. Output Level—Gain of –1, Dual
Supply
12
–12
VO = 0.5V
–1.0
3
–15
VO = 0.2V
0
NORMALIZED GAIN – dB
12
–5–
AD8014
7.5
6.2
GAIN FLATNESS – dB
RF = 600V
6.0
5.5
RF = 750V
5.0
4.5
VS = 65V
4.0
G = +2
VO = 2V p-p
3.5
3.0
RF = 1kV
5.9
VS = +5V
5.8
5.7
5.6
5.5
G = +2
V = 2V p-p
RF = 500V
5.4
5.3
RL = 150V
1
VS = 65V
6.0
RF = 500V
6.5
NORMALIZED GAIN – dB
6.1
RF = 300V
7.0
10
100
FREQUENCY – MHz
5.2
1000
RL = 150V
1
Figure 7. Bandwidth vs. Feedback Resistor—Dual Supply
9
RF = 300V
0
GAIN – dB
NORMALIZED GAIN – dB
3
6.5
6.0
RF = 500V
5.5
RF = 750V
5.0
VS = +5V
G = +2
VO = 2V p-p
4.5
RF = 1kV
–6
G = +10
VS = ±5V
RF = 1kV
–12
RL = 1kV
–15
RL = 150V
1
G = +2
–3
–9
10
100
FREQUENCY – MHz
–18
1000
VO = 200mV p-p
1
10
100
FREQUENCY – MHz
1000
Figure 11. Bandwidth vs. Gain—Dual Supply, RF = 1 kΩ
Figure 8. Bandwidth vs. Feedback Resistor—Single Supply
6.8
9
G = +2
RF = 1kV
6.7
6.6
6.5
G = +1
6
RL = 1kV
3
VS = 65V
VO = 200mV p-p
6.4
0
6.3
GAIN – dB
NORMALIZED GAIN – dB
G = +1
6
7.0
6.2
6.1
VS = +5V
6.0
VS = +5V
–3
G = +2
RF = 1kV
RL = 1kV
–6
VO = 200mV p-p
–9
5.9
G = +10
–12
5.8
–15
5.7
5.6
1000
Figure 10. Gain Flatness—Large Signal
7.5
4.0
10
100
FREQUENCY – MHz
1
10
100
FREQUENCY – MHz
–18
1000
Figure 9. Gain Flatness—Small Signal
1
10
100
FREQUENCY – MHz
1000
Figure 12. Bandwidth vs. Gain—Single Supply
–6–
Rev. C
0
–10
VS = 65V
–20
G = +2
RF = 1kV
–30
140
0
120
–40
GAIN – dBV
PSRR – dB
–40
+PSRR
–50
–60
–70
–80
–90
–100
0.01
PHASE
100
–PSRR
0.10
1
10
FREQUENCY – MHz
100
–120
80
GAIN
60
–160
40
–200
20
–240
0
1k
1000
–80
10k
100k
1M
10M
FREQUENCY – Hz
100M
PHASE – Degrees
AD8014
–280
1G
Figure 16. Transimpedance Gain and Phase vs.
Frequency
Figure 13. PSRR vs. Frequency
100
–20
–25
–30
OUTPUT RESISTANCE – V
10
–35
VS = +5V
CMRR – dB
–40
–45
–50
VS = ±5V
–55
–60
1
0.1
0.01
–65
–70
–75
0.1
1
10
FREQUENCY – MHz
100
0.01
1000
0.1
1
10
FREQUENCY – MHz
100
Figure 17. Output Resistance vs. Frequency, VS = ±5 V
and +5 V
Figure 14. CMRR vs. Frequency
DISTORTION – dBc
–30
3RD
RL = 150V
–50
2ND
RL = 150V
2ND
RL = 1kV
–70
␣␣
3RD
RL = 1kV
DISTORTION BELOW
NOISE FLOOR
–90
1
10
FREQUENCY – MHz
100
Figure 15. Distortion vs. Frequency; VS = ± 5 V, G = +2
Rev. C
1000
Figure 18. Settling Time
–7–
AD8014
Figure 21 shows the circuit that was used to imitate a photodiode preamp. A photodiode for this application is basically a
high impedance current source that is shunted by a small capacitance. In this case, a high voltage pulse from a Picosecond
Pulse Labs Generator that is ac-coupled through a 20 kΩ resistor is used to simulate the high impedance current source of a
photodiode. This circuit will convert the input voltage pulse into
a small charge package that is converted back to a voltage by the
AD8014 and the feedback resistor.
In this case the feedback resistor chosen was 1.74 kΩ, which is a
compromise between maintaining bandwidth and providing
sufficient gain in the preamp stage. The circuit preserves the
pulse shape very well with very fast rise time and a minimum of
overshoot as shown in Figure 22.
Figure 19. Large Signal Step Response; V S = ±5 V,
VO = 4 V Step
1.74kV
+5V
INPUT
0.1mF
20kV
49.9V
AD8014
49.9V
OUTPUT
(103 PROBE)
(NO LOAD)
–5V
Figure 21. AD8014 as a Photodiode Preamp
TEK RUN: 2.0GS/s ET AVERAGE
T[
]
INPUT 1
20V/ DIV
Figure 20. Large Signal Step Response; V S = +5 V,
VO = 2 V Step
Note: On Figures 19 and 20 RF = 500 Ω, R S = 50 Ω and C L =
20 pF.
OUTPUT 2
500mV/DIV
CH1 20.0V
APPLICATIONS
CD ROM and DVD Photodiode Preamp
CH2 500mV M 25.0ns CH4 380mV
Figure 22. Pulse Response
High speed Multi-X CD ROM and DVD drives require high
frequency photodiode preamps for their read channels. To minimize the effects of the photodiode capacitance, the low impedance of the inverting input of a current feedback amplifier is
advantageous. Good group delay characteristics will preserve the
pulse response of these pulses. The AD8014, having many advantages, can make an excellent low cost, low noise, low power,
and high bandwidth photodiode preamp for these applications.
–8–
Rev. C
AD8014
DRIVING CAPACITIVE LOADS
The AD8014 easily drives series terminated cables with video
signals. Because the AD8014 has such good output drive you
can parallel two or three cables driven from the same AD8014.
Figure 23 shows the differential gain and phase driving one
video cable. Figure 24 shows the differential gain and phase
driving two video cables. Figure 25 shows the differential gain
and phase driving three video cables.
The AD8014 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
settling response is obtained by the addition of a small series
resistance as shown in Figure 26. The accompanying graph
shows the optimum value for RSERIES vs. Capacitive Load. It is
worth noting that the frequency response of the circuit when
driving large capacitive loads will be dominated by the passive
roll-off of RSERIES and CL.
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
Video Drivers
0.10
0.00
0.02
0.04
0.05
0.05
0.05
0.04
0.04
0.04
0.04
0.03
0.00
0.01
0.10
0.21
0.26
0.28
0.29
0.30
0.30
0.30
0.30
40
0.05
0.00
–0.05
30
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
RSERIES – V
–0.10
20
1ST
2ND
3RD
4TH
5TH
6TH
7TH
8TH
9TH
10TH 11TH
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
Figure 23. Differential Gain and Phase R F = 500, ± 5 V, RL =
150 Ω, Driving One Cable, G = +2
0.30
0.20
0.10
0.00
–0.10
–0.20
–0.30
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
0.00
–0.02
0.03
0.05
0.06
0.06
0.05
0.05
0.07
0.10
10
DIFFERENTIAL
PHASE – Degrees DIFFERENTIAL GAIN – %
0.80
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
–0.80
CL – pF
15
20
25
Choosing Feedback Resistors
Changing the feedback resistor can change the performance of
the AD8014 like any current feedback op amp. The table below
illustrates common values of the feedback resistor and the performance which results.
0.00
0.07
0.24
0.40
0.43
0.44
0.43
0.40
0.35
0.26
0.16
Table II.
1ST
2ND
3RD
4TH
5TH
6TH
7TH
8TH
9TH
10TH 11TH
0.00
0.44
0.52
0.54
0.52
0.52
0.50
0.48
0.47
0.44
0.45
0.00
0.10
0.32
0.53
0.57
0.59
0.58
0.56
0.54
0.51
0.48
1ST
2ND
3RD
4TH
5TH
6TH
7TH
8TH
9TH
10TH
11TH
Gain
RF
RG
–3 dB BW
VO = ⴞ0.2 V
RL = 1 k⍀
+1
+2
+10
–1
–2
–10
+2
+2
+2
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
2 kΩ
750 Ω
499 Ω
Open
1 kΩ
111 Ω
1 kΩ
499 Ω
100 Ω
2 kΩ
750 Ω
499 Ω
480
280
50
160
140
45
200*
260*
280*
*VO = ±1 V.
Figure 25. Differential Gain and Phase R F = 500, ± 5 V, RL =
50 Ω, Driving Three Cables, G = +2
Rev. C
10
Figure 26. Driving Capacitive Load
0.14
Figure 24. Differential Gain and Phase R F = 500, ± 5 V, RL =
75 Ω, Driving Two Cables, G = +2
0.80
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
–0.80
5
0
–9–
–3 dB BW
VO = ⴞ0.2 V
RL = 150 ⍀
430
260
45
150
130
40
180*
210*
230*
AD8014
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
5
1
6.20 (0.2441)
5.80 (0.2284)
4
1.27 (0.0500)
BSC
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
SEATING
PLANE
0.50 (0.0196)
0.25 (0.0099)
45°
8°
0°
0.25 (0.0098)
0.17 (0.0067)
1.27 (0.0500)
0.40 (0.0157)
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
012407-A
8
4.00 (0.1574)
3.80 (0.1497)
Figure 27. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
3.00
2.90
2.80
1.70
1.60
1.50
5
1
4
2
3.00
2.80
2.60
3
0.95 BSC
1.90
BSC
1.45 MAX
0.95 MIN
0.15 MAX
0.05 MIN
0.50 MAX
0.35 MIN
0.20 MAX
0.08 MIN
SEATING
PLANE
10°
5°
0°
0.20
BSC
COMPLIANT TO JEDEC STANDARDS MO-178-AA
0.55
0.45
0.35
121608-A
1.30
1.15
0.90
Figure 28. 5-Lead Small Outline Transistor Package [SOT-23]
(RJ-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
AD8014AR
AD8014AR -REEL7
AD8014ARZ
AD8014ARZ-REEL
AD8014ARZ-REEL7
AD8014ART-R2
AD8014ART-REEL7
AD8014ARTZ-R2
AD8014ARTZ-REEL
AD8014ARTZ-REEL7
1
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Package Option
R-8
R-8
R-8
R-8
R-8
RJ-5
RJ-5
RJ-5
RJ-5
RJ-5
Branding
HAA
HAA
H09
H09
H09
Z = RoHS Compliant Part.
-10-
Rev. C
AD8014
REVISION HISTORY
Changes to Figure 22 ........................................................................ 8
Updated Outline Dimensions ........................................................10
Changes to Ordering Guide ...........................................................10
©1998–2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08930-0-4/10(C)
Rev. C
-11-