BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA ■ ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS ARE BSP40, BSP41, BSP42 AND BSP43 RESPECTIVELY 2 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BSP30/BSP31 Unit BSP32/BSP33 V CBO Collector-Base Voltage (I E = 0) -70 -90 V V CEO Collector-Emitter Voltage (I B = 0) -60 -80 V V CES Collector-Emitter Voltage (R BE = 1KΩ) -70 -90 V V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current P tot T stg Tj Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature October 1995 -5 V -1 A -0.1 A 2 W -65 to 150 o C 150 o C 1/4 BSP30/31/32/33 THERMAL DATA R thj-amb • R thj-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max o 62.5 8 o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit -100 -50 nA µA Collector Cut-off Current (I E = 0) V CB = -60 V V CB = -60 V Collector-Base Breakdown Voltage (IE = 0) I C = -100 µA for BSP30/BSP31 for BSP32/BSP33 -70 -90 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA for BSP30/BSP31 for BSP32/BSP33 -60 -80 V V Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA for BSP30/BSP31 for BSP32/BSP33 -70 -90 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 µA -5 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -0.25 -0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA -1 -1.2 V V DC Current Gain for BSP30/BSP31 I C = -100 µA V CE I C = -100 mA V CE I C = -500 mA V CE for BSP32/BSP33 I C = -100 µA V CE I C = -100 mA V CE I C = -500 mA V CE V (BR)CBO V (BR)CES h FE ∗ fT = -5 V = -5 V = -5 V 10 40 30 120 = -5 V = -5 V = -5 V 30 50 50 300 Transition Frequency I C = -50 mA V CE = -10 V f = 35 MHz C CBO Collector-Base Capacitance IE = 0 V CB = -10 V f = 1 MHz 20 pF C EBO Emitter-Base Capacitance IC = 0 V EB = -0.5 V f = 1 MHz 120 pF t on Turn-on Time I C = -100 mA 500 ns t off Turn-on Time 650 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 o T j = 150 C I B1 = -I B2 = -5 mA 100 MHz BSP30/31/32/33 SOT223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 3/4 BSP30/31/32/33 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4