Comset BD646 Silicon darlington power transistor Datasheet

SEMICONDUCTORS
BD644/646/648/650/652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers, and analogue switching application.
NPN complements are BD643, BD645, BD647, BD649 and BD651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCBO
Collector-Base Voltage
-VCEO
Collector-Emitter Voltage
-VEBO
Emitter-Base Voltage
-IC
Collector Current
-ICM
Collector Peak Current
Value
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Page 1 of 5
45
60
80
100
120
45
60
80
100
120
Unit
V
V
5
V
8
A
12
A
SEMICONDUCTORS
BD644/646/648/650/652
Symbol
Ratings
-IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Value
Unit
150
mA
62.5
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
From junction to mounting base
RthJ-A
From junction to ambient in free air
Page 2 of 5
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Value
Unit
2
K/W
70
K/W
SEMICONDUCTORS
BD644/646/648/650/652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-IE=0,-VCB =-VCEOMAX
-ICBO
Collector Cutoff Current
-IE=0,-VCB =1/2 -VCBOMAX,
TJ=150°C
-ICEO
-IEBO
Collector Cutoff Current
Emitter Cutoff Current
-IE=0, -VCE =1/2 -VCEOMAX
-VEB=5 V, -IC=0
-IC=4 A, -IB=16 mA
-VCE(SAT)
Collector-Emitter saturation
Voltage (*)
-IC=3 A, -IB=12 mA
-IC=5 A, -IB=50 mA
-VBE(SAT)
Base-Emitter Saturation
Voltage (*)
-IC=12 A, -IB=50 mA
Page 3 of 5
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min Typ Mx Unit
-
-
0.1
mA
-
-
1
mA
-
-
0.2
mA
-
-
5.0
mA
-
-
2
2
2
2
2
2.5
2.5
2.5
2.5
2.5
V
-
-
3
V
SEMICONDUCTORS
BD644/646/648/650/652
Symbol
-VBE
hFE
Ratings
Base-Emitter Voltage (*)
DC Current Gain (*)
hfe
Small Signal Current Gain
ton
toff
turn-on time
turn-off time
Value
BD644
BD646
-IC=4 A, -VCE=3 V
BD648
BD650
BD652
BD644
BD646
-IC=3 A, -VCE=3 V
BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=0.5 A
BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=4 A
BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=3 A
BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=8 A
BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=4 A, f=1MHz BD648
BD650
BD652
BD644
BD646
-VCE=3.0 V, -IC=3 A, f=1MHz BD648
BD650
BD652
-IC=3 A, -IBon= IBoff=12 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Page 4 of 5
All types
750
750
10
10
10
10
10
-
-
2700
-
200
1
5
Unit
2.5
2.5
2.5
2.5
2.5
-
V
-
µs
µs
SEMICONDUCTORS
BD644/646/648/650/652
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,51
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
Anode 1
Anode 2
Gate
Page 5 of 5
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