AON7426 30V N-Channel MOSFET General Description Product Summary The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 40A RDS(ON) (at VGS=10V) < 5.5mΩ RDS(ON) (at VGS =4.5V) < 8mΩ Typical ESD protection HBM Class 3A 100% UIS Tested 100% Rg Tested DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 130 18 IDSM TA=70°C ±20 31 IDM TA=25°C Units V 40 ID TC=100°C Maximum 30 A 14 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: Nov. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 12 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 29 PD TC=100°C -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W Page 1 of 6 AON7426 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.35 ID(ON) On state drain current VGS=10V, VDS=5V 130 TJ=55°C Units V 1 IDSS µA 5 10 µA 1.85 2.35 V 4.5 5.5 7.2 8.8 VGS=4.5V, ID=14A 5.8 8 VGS=10V, ID=18A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=18A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss mΩ mΩ S 1 V 35 A 1410 1765 2120 pF VGS=0V, VDS=15V, f=1MHz 195 283 370 pF 90 155 220 pF VGS=0V, VDS=0V, f=1MHz 1.3 2.6 3.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 77 96 115 nC Qg(4.5V) Total Gate Charge 35 44 53 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=18A VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω nC 17 nC 13 nC 17.5 ns 10 ns 56 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 16 20 24 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 21 26 31 10.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov. 2011 www.aosmd.com Page 2 of 6 AON7426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 4V VDS=5V 4.5V 100 80 6V 80 60 ID(A) ID (A) 3.5V 60 40 125°C 40 20 VGS=3V 20 25°C 0 0 0 1 2 3 4 1 5 10 3 4 5 Normalized On-Resistance 2 8 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=10V 2 1.8 VGS=10V ID=18A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=14A 1 0.8 0 0 5 10 0 15 20 25 30 35 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 15 1.0E+02 ID=18A 1.0E+01 12 40 1.0E+00 9 IS (A) RDS(ON) (mΩ Ω) 125°C 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Nov. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2400 VDS=15V ID=18A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 800 Coss 400 0 Crss 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 0 1000.0 10µs 10.0 1.0 TJ(Max)=150°C TC=25°C Power (W) 100µs 1ms 10ms 0.1 DC 30 0.01 0.1 1 VDS (Volts) TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.0 10 100 0 0.0001 0.001 0.01 0.1 10 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 10µs RDS(ON) 10 5 200 100.0 ID (Amps) Ciss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4.2°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Nov. 2011 www.aosmd.com Page 4 of 6 AON7426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C 100 TA=150°C 10 40 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=125°C 30 20 10 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 60 TA=25°C 1000 40 Power (W) Current rating ID(A) 50 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: Nov. 2011 www.aosmd.com Page 5 of 6 AON7426 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Nov. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6