AMMP-6442 37- 40 GHz, 1W Linear Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6442 MMIC is a 1W linear power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides 30dBm of output power (P-1dB) and 23dB of small-signal gain. This PA is also designed for high linear applications with typical performance of 36dBm OIP3 at 18dBm SCL output. • 5x5mm SMT package • 1 watt output power • 50 Ω match on input and output • ESD protection (50V MM, and 250V HBM) Typical Performance (Vdd = 5V, Id(q) = 0.7A) • Frequency range 37 to 40 GHz Applications • Small signal Gain of 23dB (Typ.) • Point-to-Point Radio Systems • Output power @P-1 of 30dBm (Typ.) • mmW Communications • Input and Output return losses -8dB Package Diagram • OIP3 of 35dBm @Po=18dBm (scl) Vd1 Vd2 Vd3 1 2 3 Functional Block Diagram 1 RF IN 8 GND 4 2 3 RF OUT 8 7 6 5 Vg1 Vg2 Vd3 Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. 4 7 6 Pin Function 1 2 3 4 5 6 7 8 Vd1 Vd2 Vd3 RF OUT Vd3 Vg2 Vg1 RF IN 5 Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 50V ESD Human Body Model (Class 1A): 250V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6442 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. 5. The Gain and P1dB tested at 37GHz and 40GHz guaranteed with measurement accuracy +/-1.5dB for gain and +/1.6dB for P1dB. Table 1. RF Electrical Characteristics TA=25°C, Vdd=5.0V, Idq=0.7V, Vg=-1V, Zo=50 Ω Parameter Min Typ. Max Unit Operational Frequency, Freq 37 40 GHz Small-signal Gain, Gain 20 23 dB Output Power at 1dB Gain Compression, P-1dB 28 30 dBm Relative Third Order Inter-modulation level (∆f=10MHz, Po=+12dBm, SCL), IM3 36 dBc Input Return Loss, RLin 8 dB Output Return Loss, RLout 8 dB Reverse Isolation, Isolation 45 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Drain Supply Current, Idq Gate Supply Operating Voltage, Vg 2 Typical Max. 700 -1.3 -1 -0.7 Unit Comments mA Vdd = 5V, Vg set for Idq Typical V Idq=700mA Table 3. Thermal Properties Parameter Test Conditions Value Channel Temperature, Tch Thermal Resistance [1] (Channel-to-Base Plate), qch-bs Tch=150 °C Ambient operational temperature TA = 25°C Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C Thermal Resistance at backside temperature Tb=25°C qJC = 17 °C/W Note: 1. Assume AnPb soldering to an evaluation RF module at 90.5 °C base plate temperatures. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings [1] Description Pin Min. Drain Supply Voltage, Vd [2] Gate Supply Voltage, Vg -2 Max. Unit 5.5 V 0 Power Dissipation, Pd [2,3] 6 CW Input Power, Pin [2] 20 dBm Channel Temperature [4,5] +150 °C +155 °C +260 °C Storage Temperature Maximum Assembly Temperature -65 Comments CW 30 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. These ratings apply to each individual FET 4. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3 Typical Performance (Data was obtained from a 2.4mm connector based test fixture and includes connector and board losses. Connector and board loss is approximately 0.75dB at input and output ports for an approximate total of 1.5dB.) (TA = 25°C, Vdd = 5V, Id(q) = 0.7 A, Vg = -1 V, Zin = Zout = 50 Ω) 30 S21[dB] S12[dB] 0 -35 -5 -40 15 -45 10 -50 5 -55 -20 -60 -25 0 30 32 34 36 38 40 42 44 Frequency [GHz] 46 48 50 Figure 1. Typical gain and reverse Isolation Noise Figure [dB] Gain[dB], P-1[dBm], PAE[%] 20 15 P-1 PAE@P-1 P-3 PAE@P-3 10 5 30 32 34 36 38 40 42 Frequency [GHz] 44 46 48 50 35 36 0 37 38 Frequency [GHz] 39 40 -50 -60 37 38 Frequency [GHz] 39 41 Frequency [GHz] 43 45 39 40 Figure 5. Typical third order inter-modulation product level vs. frequency at different single carrier output level (SCL) 1400 30 25 1300 1200 1100 20 1000 15 900 10 800 5 700 0 600 -5 -15 -10 -5 0 Pin [dBm] 5 10 15 500 Figure 6. Typical output power, PAE, and total drain current versus Input power at 38GHz Ids [mA] -40 36 37 Pout(dBm) PAE[%] Id(total) 35 -30 35 35 Figure 4. Typical noise figure Po[dBm], and, PAE[%] -20 4 0 40 SCL=10[dBm] SCL=15[dBm] SCL=18.5[dBm] -10 6 2 Figure 3. Typical output power (P-1 and P-3) vs. frequency Relative IM3 Level [dBc] S11[dB] S22[dB] 8 25 -70 -15 10 30 0 -10 Figure 2. Typical return Loss (input and output) 35 4 Return Loss [dB] 20 S12 [dB] S21[dB] 25 -30 Typical over temperature dependencies (TA = 25°C, Vdd = 5V, Idq = 0.7 A, Vg = -1 V, Zin = Zout = 50 Ω) 0 S21[dB] -10 S11_25 S11_-40 S11_85 -15 -20 20 25 30 35 40 Frequency[GHz] 45 50 Figure 7. Typical S11 over temperature P-1 [dBm] S22[dB] -5 -10 -20 S22_25 S22_-40 S22_85 20 25 30 35 40 Frequency[GHz] 45 50 Figure 9. Typical S22 over temperature 20 OIP3 [dBm] K_factor 25 30 10 5 33 32 31 30 29 28 27 26 25 24 23 34 35 36 30 35 40 Frequency (GHz) Figure 11. Typical K-factor over temperature 5 50 37 38 39 Frequency [GHz] 40 41 42 45 -10 40 -15 35 -20 30 -25 25 -30 20 -35 15 -40 10 25 45 P-1_-40deg P-1_25deg P-1_85deg OIP3(-40C) OIP3(85C) IM3(25C) 5 0 20 35 40 Frequency[GHz] Figure 10. Typical P1 over temperature K() Meas_25C K() Meas_85C K() Meas_n40C 15 20 Figure 8. Typical Gain over temperature 0 -15 S21_25 S21_-40 S21_85 45 50 0 34 35 36 -45 OIP3(25C) IM3(-40C) IM3(85C) 37 38 39 Frequency [GHz] -50 40 41 Figure 12. Typical IM3 level over temperature at Po=18dBm, SCL 42 -55 IM3 Level [dBc] S11[dB] -5 30 28 26 24 22 20 18 16 14 12 10 Typical Scattering Parameters [1], (TA = 25°C, Vdd =5 V, Idq = 0.7A, Zin = Zout = 50 Ω) Freq S11 [dB] S11 Mag. S11 Ang. S21 [dB] S21 Mag. S21 Ang. S12 [dB] S12 Mag. S12 Ang. S22 [dB] S22 Mag. S22 Ang. 20 -2.90 0.72 164.53 -23.81 0.06 -141.01 -48.88 3.60E-03 -57.97 -2.69 0.73 21.40 21 -3.00 0.71 86.65 -15.74 0.16 115.71 -52.28 2.43E-03 -104.05 -2.41 0.76 -70.16 22 -3.08 0.70 4.08 -7.22 0.44 0.83 -45.40 5.37E-03 152.36 -2.25 0.77 -161.69 23 -3.18 0.69 -87.20 0.27 1.03 -131.23 -46.50 4.73E-03 103.80 -2.68 0.73 112.41 24 -3.62 0.66 176.98 4.45 1.67 92.82 -48.17 3.90E-03 -13.03 -3.39 0.68 32.65 25 -4.52 0.59 84.30 7.24 2.30 -36.02 -48.90 3.59E-03 -66.94 -3.55 0.66 -45.60 26 -5.00 0.56 -8.28 9.35 2.93 -154.65 -50.90 2.85E-03 -147.71 -2.98 0.71 -125.74 27 -4.11 0.62 -104.27 11.05 3.57 81.71 -48.42 3.79E-03 176.54 -2.72 0.73 155.15 28 -3.00 0.71 168.96 13.11 4.52 -26.13 -48.48 3.77E-03 100.75 -3.20 0.69 77.20 29 -2.20 0.78 90.69 16.36 6.57 -143.75 -44.95 5.66E-03 16.82 -4.92 0.57 -11.91 30 -3.25 0.69 7.32 21.27 11.57 95.82 -42.75 7.28E-03 -67.62 -7.33 0.43 -126.78 31 -5.62 0.52 -81.47 24.48 16.76 -48.77 -45.14 5.53E-03 -173.22 -7.23 0.44 132.40 32 -8.31 0.38 151.65 23.09 14.27 172.96 -48.44 3.78E-03 113.12 -5.77 0.51 54.23 33 -7.80 0.41 55.51 22.16 12.83 59.22 -48.10 3.94E-03 83.43 -6.33 0.48 -12.99 34 -6.69 0.46 -3.34 23.03 14.18 -64.46 -47.20 4.36E-03 14.73 -12.04 0.25 -100.71 35 -5.11 0.56 -64.50 23.07 14.25 169.26 -46.03 5.00E-03 -72.16 -13.67 0.21 6.05 36 -5.77 0.51 -136.84 22.91 13.97 48.13 -47.62 4.16E-03 -147.24 -8.21 0.39 -77.65 37 -10.68 0.29 144.16 24.12 16.07 -78.82 -50.37 3.03E-03 131.49 -7.25 0.43 -146.43 38 -32.53 0.02 70.22 23.59 15.11 148.85 -55.62 1.66E-03 37.70 -10.74 0.29 121.48 39 -16.09 0.16 123.23 23.65 15.23 12.30 -54.20 1.95E-03 -76.46 -15.37 0.17 -4.18 40 -29.19 0.03 44.21 20.79 10.95 -116.29 -43.80 6.46E-03 70.75 -13.01 0.22 -123.56 41 -13.30 0.22 -59.99 21.33 11.66 112.89 -44.57 5.91E-03 -75.57 -8.63 0.37 173.01 42 -11.59 0.26 149.87 20.57 10.68 -35.23 -43.90 6.39E-03 146.83 -6.41 0.48 75.90 43 -12.74 0.23 70.60 14.55 5.34 -173.04 -46.59 4.69E-03 7.19 -10.12 0.31 4.46 44 -10.80 0.29 4.51 12.27 4.10 48.86 -47.60 4.17E-03 -74.19 -15.97 0.16 -73.99 45 -7.28 0.43 -68.05 6.64 2.15 -95.90 -50.63 2.94E-03 175.00 -21.81 0.08 -64.83 46 -5.57 0.53 -149.37 -0.54 0.94 129.12 -45.96 5.04E-03 157.54 -11.06 0.28 -107.83 47 -5.11 0.56 128.69 -7.71 0.41 4.98 -43.66 6.56E-03 42.47 -7.63 0.42 164.84 48 -5.10 0.56 40.23 -14.75 0.18 -116.43 -47.75 4.10E-03 -27.21 -7.78 0.41 65.52 49 -5.16 0.55 -55.86 -21.51 0.08 127.74 -40.36 9.59E-03 -151.21 -7.59 0.42 -65.16 50 -4.69 0.58 -154.92 -33.07 0.02 27.73 -41.94 8.00E-03 170.09 0.55 -177.64 -5.13 Note: 1. Data obtained from 2.4-mm connecter based modules, and this data is including connecter loss, and board loss. The measurement reference plane is at the RF connectors. 6 Biasing and Operation Recommended quiescent DC bias condition for optimum power and linearity performances is Vdd=5 volts with Vgg (-1V) set for Idq=700 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V. A single DC gate supply connected to Vgg will bias all gain stages. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp (-2V). A typical DC bias configuration is shown in Figure 13. Vd3 may be biased from either side (Pin 3 or Pin 5). The RF input and output ports are DC decoupled internally. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device. 100 pF > 0.1 µF 1 7 > 0.1 µF 100 pF 6 Note: Vd3 may be biased from either side. 3 8 RF_IN Vgg 2 4 RF_OUT > 0.1 µF Vdd 5 100 pF Figure 13. Schematic and recommended assemble example Note: No RF performance degradation is seen due to ESD up to 250V HBM and 50V MM. The DC characteristics in general show increased leakage at lower ESD discharge voltages. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols. 7 AMMP-64xx Part Number Ordering Information Part Number Devices Per Container Container AMMP-6442-BLKG 10 Antistatic bag AMMP-6442-TR1G 100 7” Reel AMMP-6442-TR2G 500 7” Reel Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5521, AMxP-xxxx production Assembly Process (Land Pattern B). For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. AV02-2399EN - July 9, 2013