n-Channel Power MOSFET OptiMOS™ BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance in small footprint packages make OptiMOS™ P3 -30V the best choice for the demanding requirements of load switch, high-side switch and battery management applications. OptiMOS™ P3 products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. Features • • • • • • • • • • P-Channel MOSFET Very low on-resistance RDS(on) Qualified for consumer level application Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MX footprint and outline1) 100% avalanche tested Low parasitic inductance Low profile (<0.7 mm) Applications • • • Load switch High-side switch Battery management Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS -30 V IFX OptiMOS webpage RDS(on),max 2.9 mΩ IFX OptiMOS product brief ID 137 A IFX OptiMOS spice models QOSS 106 nC IFX Design tools Qg.typ 66 Type Package Marking BSB029P03LX3 G MG-WDSON-2 5103 1) DirectFET ® is a trademark of International Rectifier Corporation. BSB027P03LX3 G uses DirectFET ® technology licensed from International Rectifier Corporation Preliminary Data Sheet 1 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current Values ID Pulsed drain current2) ID,pulse 3) Min. Typ. Max. - - 137 - - Unit Note / Test Condition A VGS=10 V, TC=25 °C 87 VGS=10 V, TC=100 °C 26 VGS=10 V, TA=25 °C, RthJA=45 K/W)1) 400 TC=25 °C 40 TC=25 °C Avalanche current, single pulse IAS Avalanche energy, single pulse EAS - - 290 mJ Gate source voltage VGS -20 - 20 V Power dissipation Ptot - - 78 W Tj,Tstg -40 IEC climatic category; DIN IEC 68-1 - TC=25 °C TA=25 °C, RthJA=451) K/W 2.8 Operating and storage temperature ID=40 A,RGS=25 Ω 150 °C 55/150/56 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 3 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Thermal resistance, junction - case RthJC Device on PCB RthJA Values Unit Note / Test Condition °K/W bottom Min. Typ. Max. - 1.0 - - - 1.6 top - - 45 6 cm2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain conneciton. PCB is vertical in still air. Preliminary Data Sheet 2 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Values Min. Typ. Max. 30 - - Unit Note / Test Condition V VGS=0 V, ID=1 mA Gate threshold voltage VGS(th) -1.9 -2.5 -3.1 Zero gate voltage drain current IDSS - 0.1 10 - 10 100 - 10 100 nA VGS=20 V, VDS=0 V - 3.4 4.2 mΩ VGS=6V, ID=20A 2.4 2.9 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance RG - 2.5 Transconductance gfs 48 95 Table 5 VDS=VGS, ID=250 µA VDS=30V, VGS=0 V, Tj=25 °C µA VDS=30 V, VGS=0 V, Tj=125 °C VGS=10 V, ID=30A Ω S |VDS|>2|ID|RDS(on)max, ID=30 A Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Input capacitance Ciss - 10000 15000 Output capacitance Coss - 4600 6100 Reverse transfer capacitance Crss - 340 510 Turn-on delay time td(on) - 27 41 Rise time tr - 10 15 Turn-off delay time td(off) - 62 93 Fall time tf - 12 18 Preliminary Data Sheet 3 Unit Note / Test Condition pF VGS=0 V, VDS=15 V, f=1 MHz ns VDD=15V, VGS=10 V, ID=30 A, RG= 1.6 Ω 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics Table 6 Gate charge characteristics1) Parameter Symbol Values Min. Typ. Max. - 40 53 16 22 Unit Note / Test Condition nC VDD=15 V, ID=30 A, VGS=0 to 4.5 V Gate to source charge Qgs Gate charge at threshold Qg(th) Gate to drain charge Qgd - 18 30 Switching charge Qsw - 41 61 Gate charge total Qg 66 88 Gate plateau voltage Vplateau 3.9 - V Gate charge total Qg 138 183 nC Gate charge total, sync. FET Qg(sync) 56 75 VDS=0.1V, VGS=0 to 4.5V Output charge Qoss 106 142 VDD=15 V, VGS=0 V - VDD=15 V, ID=30A,VGS=0 to10V 1) See figure 16 for gate charge parameter definition Table 7 Reverse diode characteristics Parameter Symbol Values Min. Typ. Unit Note / Test Condition A TC=25 °C Max. Diode continuous forward current Is 78 Diode pulse current IS,pulse 400 Diode forward voltage VSD - 0.8 1.0 V VGS=0 V, IF=30 A, Tj=25 °C Reverse recovery charge Qrr - 116 145 nC VR=15V, IF=Is, diF/dt=400 A/µs Preliminary Data Sheet 4 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Preliminary Data Sheet 4 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=tp/T 5 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Preliminary Data Sheet 6 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS;ID=250µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Preliminary Data Sheet 7 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Preliminary Data Sheet 8 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Package outlines 6 Package outlines Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches Preliminary Data Sheet 9 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Package outlines 7 Package outlines Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches Preliminary Data Sheet 10 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Package outlines 8 Package outlines Preliminary Data Sheet 11 1.92, 2011-03-21 OptiMOS™ Power-MOSFET BSB029P03NX3 G Revision History 9 Revision History Revision History: 2011-03-21, 1.92 Previous Revision: Revision Subjects (major changes since last revision) 0.1 Release of target data sheet 1.9 Release of preliminary data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2011-03-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 12 1.92, 2011-03-21