BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V • • www.onsemi.com ESD Rating − Machine Model: > 400 V S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO Vdc 2 VCBO Vdc VEBO Vdc IC 100 XX M G G mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range MARKING DIAGRAM 6.0 6.0 5.0 BC846 BC847, BC850 BC848, BC849 Collector Current − Continuous SOT−23 CASE 318 STYLE 6 80 50 30 BC846 BC847, BC850 BC848, BC849 Emitter−Base Voltage 1 65 45 30 BC846 BC847, BC850 BC848, BC849 Collector−Base Voltage 3 Unit 1 XX M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Symbol Max Unit PD 225 mW 1.8 mW/°C ORDERING INFORMATION RqJA 556 °C/W See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 January, 2017 − Rev. 17 1 Publication Order Number: BC846ALT1/D BC846ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC846A, B BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)CEO 65 45 30 − − − − − − V Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846A, B BC847A, B, C BC850B, C BC848A, B, C, BC849B, C V(BR)CES 80 50 30 − − − − − − V Collector −Base Breakdown Voltage (IC = 10 mA) BC846A, B BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)CBO 80 50 30 − − − − − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846A, B BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)EBO 6.0 6.0 5.0 − − − − − − V ICBO − − − − 15 5.0 nA mA hFE − − − 90 150 270 − − − − 110 200 180 290 220 450 420 520 800 Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C pF dB − − − − 10 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 300 300 VCE = 1 V VCE = 5 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 150°C 200 25°C 100 −55°C 0 200 25°C 100 −55°C 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.16 IC/IB = 20 150°C 0.14 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current 0.9 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 −55°C IC/IB = 20 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Voltage vs. Collector Current www.onsemi.com 3 0.1 BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 6. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 8. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 9. Current−Gain − Bandwidth Product www.onsemi.com 4 50 BC846ALT1G Series BC846B, SBC846B 600 VCE = 1 V 150°C 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 400 25°C 300 200 −55°C 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. DC Current Gain vs. Collector Current Figure 11. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 13. Base Emitter Saturation Voltage vs. Collector Current Figure 14. Base Emitter Voltage vs. Collector Current www.onsemi.com 5 0.1 BC846ALT1G Series 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC846B, SBC846B TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 15. Collector Saturation Region f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 16. Base−Emitter Temperature Coefficient 40 4.0 -55°C to 125°C 2.2 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6 BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B 600 VCE = 1 V 150°C 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 400 25°C 300 200 −55°C 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. DC Current Gain vs. Collector Current Figure 20. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 21. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 22. Base Emitter Saturation Voltage vs. Collector Current Figure 23. Base Emitter Voltage vs. Collector Current www.onsemi.com 7 0.1 BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 25. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 24. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 26. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 27. Current−Gain − Bandwidth Product www.onsemi.com 8 50 BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 1000 1000 VCE = 1 V 150°C 700 600 VCE = 5 V 900 150°C 800 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 900 25°C 500 400 300 −55°C 200 100 800 700 600 25°C 500 400 −55°C 300 200 100 0 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 28. DC Current Gain vs. Collector Current Figure 29. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 30. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 31. Base Emitter Saturation Voltage vs. Collector Current Figure 32. Base Emitter Voltage vs. Collector Current www.onsemi.com 9 0.1 BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 34. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 33. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 35. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10 50 BC846ALT1G Series 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.001 1 10 0.1 100 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for BC846A, BC846B Figure 38. Safe Operating Area for BC847A, BC847B, BC847C, BC850B, BC850C IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C www.onsemi.com 11 100 BC846ALT1G Series ORDERING INFORMATION Device Marking Package Shipping† BC846ALT1G SBC846ALT1G* 3,000 / Tape & Reel 1A BC846ALT3G 10,000 / Tape & Reel BC846BLT1G 3,000 / Tape & Reel SBC846BLT1G* BC846BLT3G 1B 10,000 / Tape & Reel SBC846BLT3G* BC847ALT1G BC847ALT3G 3,000 / Tape & Reel 1E 10,000 / Tape & Reel BC847BLT1G 3,000 / Tape & Reel SBC847BLT1G* BC847BLT3G 1F 10,000 / Tape & Reel NSVBC847BLT3G* BC847CLT1G SBC847CLT1G* 3,000 / Tape & Reel 1G BC847CLT3G BC848ALT1G 1J SOT−23 (Pb−Free) 10,000 / Tape & Reel 3,000 / Tape & Reel BC848BLT1G SBC848BLT1G* 3,000 / Tape & Reel 1K BC848BLT3G 10,000 / Tape & Reel BC848CLT1G NSVBC848CLT1G* 3,000 / Tape & Reel 1L BC848CLT3G 10,000 / Tape & Reel BC849BLT1G NSVBC849BLT1G* 3,000 / Tape & Reel 2B BC849BLT3G 10,000 / Tape & Reel BC849CLT1G BC849CLT3G 3,000 / Tape & Reel 2C 10,000 / Tape & Reel BC850BLT1G NSVBC850BLT1G* 2F 3,000 / Tape & Reel BC850CLT1G NSVBC850CLT1G* 2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 12 BC846ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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