Daesan B2S Current 0.8 amperes voltage 100 to 1000 volt Datasheet

CURRENT 0.8 Amperes
VOLTAGE 100 to 1000 Volts
B1S THRU B10S
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 30A Peak
· Designed for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
L
G
A B
D E
H
C
J
MiniDIP
K
Mechanical Data
· Case : Molded Plastic
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 2026
· Polarity : As Marked on Case
· Approx. Weight : 0.125 grams
· Mounting Position : Any
· Marking : Type Number
Dim
Min
Max
A
5.43
5.75
B
3.60
4.00
C
0.15
0.35
D
0.05
0.20
E
7.00
G
0.70
1.10
H
4.50
4.90
J
2.80
2.90
K
2.50
2.70
L
0.50
0.80
A ll Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
B1S
B2S
B4S
B6S
B8S
B10S
Units
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
VRMM
VRWM
VR
100
200
400
600
800
1000
Volts
RMS Reverse voltage
VRMS
70
140
280
420
560
700
Volts
@ TA=40℃
Io
0.8
Amp
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
30
Amp
Forward voltage (per element)
@ IF=0.4 A
VFM
1.0
Volts
Peak Reverse Current at Rated
DC Blocking voltage (per element)
@ TA=25℃
Average Rectified Output Current
@ TA=125℃
IRM
10
500
μA
Typical Junction Capacitance
per element (Note 1)
Cj
10
pF
Typical Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
75
℃/W
Operating and Storage Temperature Range
Tj
TSTG
-55 to +150
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas.
℃
I F , INST ANT ANEOUS FOR WARD CURRENT
(A)
0.8
0.6
Ceramic PC Board
0.4
0.2
I (AV) , AVERAGE
FOR WARD RECTIFIED
CURRENT
(A)
RATING AND CHARACTERISTIC CURVES B1S THRU B10S
Resistive or Inductive Load
0
0
40
80
120
10
1.0
0.1
T j = 25 C
Pulse Width = 300 s
0.01
0.2
160
35
0.6
0.8
1.0
100
1.2
1.4
1.6
T j = 25 C
f = 1.0MHz
C j, JUNCTION CAP ACIT ANCE (pF)
30
20
10
T A = 25 C
Single Half Sine-W ave
Pulse Width = 5.3ms
(JEDEC Method)
10
1
0
1.0
1
10
(μA)
CURRENT
100
T j = 125 C
10
1.0
T j = 25 C
0.1
0.01
0
10
V R , REVERSE
VOL TAGE (V)
Fi g. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fi g. 3 Maximum Peak Forward Sur ge Current (per leg)
I R , INST ANT ANEOUS REVERSE
(A)
I FSM , PEAK FOR WARD SURGE CURRENT
0.4
V F , INST ANT ANEOUS FOR WARD V OL TAGE (V)
Fi g. 2 T ypical Forward Characteristics (per leg)
T A , AMBIENT TEMPERA TURE ( C )
Fi g. 1 Output Current Deratin g Curve
20
40
60
80
100
120
140
PERCENT OF RA TED PEAK REVERSE
VOL TAGE (%)
Fi g. 5 Typical Reverse Characteristics (per element )
100
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