DCR470G85 Phase Control Thyristor Preliminary Information DS5894-1.1 August 2007 (LN25569) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 467A 5250A 1500V/µs 200A/us * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR470G85 DCR470G80 DCR470G70 Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: G (See Package Details for further information) Lower voltage grades available. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR470G85 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 467 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 734 A Continuous (direct) on-state current - 725 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 5.25 kA VR = 0 0.138 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0268 °C/W Single side cooled Anode DC - 0.0527 °C/W Cathode DC - 0.0652 °C/W Clamping force 11.5kN Double side - 0.0072 °C/W (with mounting compound) Single side - .0144 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 10 13 kN 2/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 100 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 100 A/µs Gate source 30V, 10, Non-repetitive - 200 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 50A to 400A at Tcase = 125°C - 1.162 V Threshold voltage – High level 400A to 1600A at Tcase = 125°C - 1.3063 V On-state slope resistance – Low level 50A to 400A at Tcase = 125°C - 3.153 m On-state slope resistance – High level 400A to 1600A at Tcase = 125°C - 2.763 m TBD TBD µs 1000 1600 µs 2000 2600 µC Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 500A, Tj = 125°C, dI/dt = 5A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES Instantaneous on-state current IT - (A) 1600 25°C min 25°C max 125°C min 1200 125°C max 800 400 0 1.0 2.0 3.0 4.0 5.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 1.545561 B = -0.202735 C = 0.001865 D = 0.066158 these values are valid for Tj = 125°C for IT 50A to 1600A 4/10 www.dynexsemi.com DCR470G85 16 130 15 14 120 Maximum case temperature, T case ( o C ) Mean power dissipation - (kW) SEMICONDUCTOR 13 12 11 10 9 8 7 6 180 120 90 60 30 5 4 3 2 1 110 100 90 80 70 60 50 40 30 20 10 0 0 500 1000 0 1500 0 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 100 200 300 400 500 600 Mean on-state current, IT(AV) - (A) 700 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 12 180 120 90 60 30 120 110 100 11 Mean power dissipation - (kW) Maximum heatsink temperature, THeatsink - ( ° C) 180 120 90 60 30 90 80 70 60 50 40 30 20 10 9 8 7 6 5 d.c. 180 120 90 60 30 4 3 2 10 1 0 0 100 200 300 400 500 600 700 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 0 500 1000 1500 2000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR 130 120 d.c. 180 120 90 60 30 110 100 Maximum heatsink temperature Theatsink -(o C) Maximum permissible case temperature , Tcase -(° C) 130 90 80 70 60 50 40 30 20 d.c. 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 20 10 10 0 0 0 200 400 600 800 1000 0 1200 200 400 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 1000 Anode side cooled Double Side Cooled Anode Cooled 2 5.4226 3 16.9074 0.0066401 0.0457025 0.4962482 1.8248 2.3214 5.2661 10.2686 34.8031 0.0066948 0.045528 0.3484209 4.582 2.4895 5.9105 7.4256 49.3432 0.0070404 0.052895 0.3933903 4.2295 Ri (°C/kW) Ti (s) Cathode side cooled 1 2.2995 Ri (°C/kW) Ti (s) 70 Themal impedance Z th(j-c) ( °C/kW ) 800 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled 60 600 Mean on-state current, IT(AV) - (A) Ri (°C/kW) Ti (s) 4 2.1488 Cathode Cooled Zth = [Ri x ( 1-exp. (t/ti))] 50 [1] 40 Rth(j-c) Conduction 30 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 20 10 0 0.001 0.01 0.1 1 Time ( s ) 10 100 ° 180 120 90 60 30 15 Double side cooling Zth (z) sine. 4.15 4.90 5.74 6.53 7.16 7.46 rect. 2.72 4.02 4.79 5.65 6.64 7.18 ° 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. 4.15 4.89 5.73 6.52 7.15 7.44 rect. 2.72 4.02 4.78 5.65 6.62 7.16 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 4.13 4.87 5.69 6.46 7.07 7.36 rect. 2.71 4.00 4.76 5.60 6.56 7.09 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR 13 11 Surge current, ITSM - (kA) 5 Surge current, ITSM- (kA) Conditions: Tcase= 125°C VR = 0 half-sine w ave 12 Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 4 3 2 10 9 0.3 0.25 ITSM 8 0.2 7 I2t 6 0.15 5 4 0.1 3 2 1 I2t (MA2s) 6 0.05 1 0 0 1 10 Number of cycles Fig.10 Multi-cycle surge current 100 1 10 0 100 Pulse width, tP - (ms) Fig.11 Single-cycle surge current 7/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig12 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 13 Gate characteristics 8/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR803SG18 DCR806SG28 DCR818SG48 DCR820SG65 DCR1080G22 DCR960G28 DCR780G42 DCR690G52 DCR590G65 DCR470G85 Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.84 26.17 27.1 26.55 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 27.1 26.55 27.46 26.91 Ø57.0 MAX Ø33.95 NOM Ø1.5 CATHODE GATE ANODE Ø33.95 NOM FOR PACKAGE HEIGHT SEE TABLE Clamping force: 11.5 kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G Fig.14 Package outline 9/10 www.dynexsemi.com DCR470G85 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com