ON BCP68T1G Npn silicon epitaxial transistor Datasheet

BCP68T1G, SBCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
 High Current: IC = 1.0 A
 The SOT−223 Package Can Be Soldered Using Wave or Reflow
 SOT−223 package ensures level mounting, resulting in improved




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MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
The PNP Complement is BCP69T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2,4
BASE
1
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
EMITTER 3
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
20
Vdc
Collector−Base Voltage
VCBO
25
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation @ TA = 25C
(Note 1)
Derate above 25C
PD
1.5
W
12
mW/C
Operating and Storage Temperature
Range
TJ, Tstg
−65 to 150
C
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient (Surface Mounted)
RqJA
83.3
C/W
TL
260
C
10
Sec
Rating
THERMAL CHARACTERISTICS
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1
MARKING DIAGRAM
AYW
CA G
G
CA
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
SBCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
BCP68T3G
SOT−223
(Pb−Free)
4,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCP68T1/D
BCP68T1G, SBCP68T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0)
V(BR)CES
25
−
−
Vdc
Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
−
−
Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
Collector−Base Cutoff Current (VCB = 25 Vdc, IE = 0)
ICBO
−
−
10
mAdc
Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
−
−
10
mAdc
50
85
60
−
−
−
−
375
−
Characteristics
OFF CHARACTERISTICS
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
−
Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
−
−
0.5
Vdc
Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
−
1.0
Vdc
fT
−
60
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc)
300
200
f,
T CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz)
hFE, DC CURRENT GAIN
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 125C
= 25C
100
= - 55C
VCE = 1.0 V
10
1.0
10
100
IC, COLLECTOR CURRENT (mA)
1000
300
200
100
70
VCE = 10 V
TJ = 25C
f = 30 MHz
50
30
10
Figure 1. DC Current Gain
100
200
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain-Bandwidth Product
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2
1000
BCP68T1G, SBCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
80
TJ = 25C
TJ = 25C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
70
Cib, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
1.0
0.4
0.2
0
50
40
VCE(sat) @ IC/IB = 10
1.0
60
30
10
100
1000
IC, COLLECTOR CURRENT (mA)
0
1.0
Figure 3. “On” Voltage
RVB, TEMPERATURE COEFFICIENT (mV/C)
20
15
10
5.0
10
15
VR, REVERSE VOLTAGE (VOLTS)
20
-0.8
-1.2
-1.6
RqVB for VBE
-2.0
-2.4
-2.8
1.0
Figure 5. Capacitance
10
100
IC, COLLECTOR CURRENT (mA)
TJ = 25C
0.8
0.6
0.4
= 1000 mA
I C = 10 mA
= 100 mA
= 50 mA
0.2
0
0.01
1000
Figure 6. Base-Emitter Temperature Coefficient
1.0
VCE , COLLECTOR VOLTAGE (V)
Cob, CAPACITANCE (pF)
TJ = 25C
0
5.0
Figure 4. Capacitance
25
5.0
2.0
3.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
= 500 mA
0.1
1.0
IB, BASE CURRENT (mA)
10
Figure 7. Saturation Region
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3
100
BCP68T1G, SBCP68T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BCP68T1/D