BSP 92 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated -250 V 12 Ω -0.26 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 2 1 VPS05163 Type Package Pb-free Tape and Reel Information Marking BSP 92 P PG-SOT-223 Yes L6327: 1000 pcs/reel BSP92P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.26 TA=70°C -0.23 ID puls -1.04 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.26A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 2.4 Page 1 2007-02-08 BSP 92 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 - 80 115 - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-130µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10 20 Ω RDS(on) - 8.2 15 RDS(on) - 7.5 12 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.23A Drain-source on-state resistance VGS =-10V, ID =-0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.4 Page 2 2007-02-08 BSP 92 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.29 0.57 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.23A Input capacitance Ciss VGS =0, VDS =-25V, - 83 104 Output capacitance Coss f=1MHz - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD =-125V, VGS =-10V, - 5 8 Rise time tr ID =-0.26A, RG=6Ω - 6 9 Turn-off delay time td(off) - 67 101 Fall time tf - 33 50 - -0.1 - -1.9 -2.4 - -4.3 -5.4 V(plateau) VDD =-200V, ID=-0.26A - -2.9 -3.6 IS - - -0.26 A - - -1.04 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.26A VDD =-200V, ID=-0.26A, -0.13 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.26A - -0.83 Reverse recovery time trr VR =-125V, IF =lS , - 51 64 ns Reverse recovery charge Qrr diF /dt=100A/µs - 76 95 nC Rev 2.4 Page 3 -1.21 V 2007-02-08 BSP 92 P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 92 P BSP 92 P -0.28 A W -0.24 1.6 -0.22 -0.2 1.2 ID Ptot 1.4 -0.18 -0.16 1 -0.14 -0.12 0.8 -0.1 0.6 -0.08 -0.06 0.4 -0.04 0.2 -0.02 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 160 °C TA 1 BSP 92 P 10 2 A BSP 92 P K/W tp = 110.0µs 10 1 Z thJA ID -10 0 /I D 1 ms DS 10 ms 10 0 = V -10 -1 on ) D = 0.50 R DS ( 0.20 0.10 single pulse -10 -2 0.05 10 -1 0.02 DC 0.01 -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 VDS Rev 2.4 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2007-02-08 4 BSP 92 P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 1 0.8 -I D 0.7 0.6 0.5 Ω 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 3.2V 2.8V 2.6V 2.6V 2.8V 3.2V 14 RDSON A 18 12 10 8 0.4 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 6 0.3 4 0.2 2 0.1 0 0 1 2 3 4 5 6 7 8 V 0 0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 1 g fs -I D S 0.6 0.6 0.4 0.4 0.2 0.2 1 2 V 0 0 4 -VGS Rev 2.4 1 1 A 0 0 A -ID 0.2 0.4 0.6 A 1 -ID Page 5 2007-02-08 BSP 92 P 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.26 A, VGS = -10 V parameter: VGS = VDS ; ID = -130µA 32 BSP 92 P 2.2 Ω V - VGS(th) RDS(on) 98% 24 20 1.8 1.6 typ. 1.4 16 1.2 98% 12 1 8 typ 0.8 4 0 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 1 pF BSP 92 P A Ciss -10 0 C IF 10 2 Coss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 0 0 6 12 18 24 V -10 -2 0 36 -VDS Rev 2.4 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2007-02-08 BSP 92 P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate ) V(BR)DSS = f (Tj ) parameter: ID = -0.26 A pulsed -16 BSP 92 P BSP 92 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 20% -260 50% -255 -6 80% -250 -245 -4 -240 -235 -2 -230 0 0 1 2 3 4 5 nC -225 -60 6.5 |Q G| Rev 2.4 -20 20 60 100 °C 180 Tj Page 7 2007-02-08 BSP 92 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 Page 8 2007-02-08