bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Host-Controlled Multi-Chemistry Battery Charger With Integrated System Power Selector and AC Overpower Protection • • PGND REGN LODRV PH 28 27 26 25 24 23 22 CHGEN 1 21 DPMDET ACN 2 20 CELLS ACP 3 bq24750 19 SRP ACDRV 4 28 LD QFN 18 SRN ACDET 5 TOP VIEW 17 BAT ACSET 6 16 SRSET ACOP 7 15 IADAPT 10 11 12 13 14 BATDRV 9 ACGOOD 8 VADJ • The bq24750 is a high-efficiency, synchronous battery charger with integrated compensation and system power selector logic, offering low component count for space-constrained multi-chemistry battery charging applications. Ratiometric charge current and voltage programming allows high regulation accuracies, and can be either hardwired with resistors or programmed by the system power-management microcontroller using a DAC or GPIOs. VDAC • • • DESCRIPTION HIDRV • Notebook and Ultra-Mobile Computers Portable Data-Capture Terminals Portable Printers Medical Diagnostics Equipment Battery Bay Chargers Battery Back-up Systems VREF • • • • • • • PVCC • APPLICATIONS BTST • NMOS-NMOS Synchronous Buck Converter with 300 kHz Frequency and >95% Efficiency 30-ns Minimum Driver Dead-time and 99.5% Maximum Effective Duty Cycle High-Accuracy Voltage and Current Regulation – ±0.5% Charge Voltage Accuracy – ±3% Charge Current Accuracy – ±3% Adapter Current Accuracy – ±2% Input Current Sense Amp Accuracy Integration – Automatic System Power Selection From AC/DC Adapter or Battery – Internal Loop Compensation – Internal Soft Start Safety – Input Overvoltage Protection (OVP) – Dynamic Power Management (DPM) with Status Indicator – Programmable Inrush Adapter Power (ACOP) and Overcurrent (ACOC) Limits – Reverse-Conduction Protection Input FET – Battery Thermistor Sense Input (TS) for Charge Qualification Supports Two, Three, or Four Li+ Cells 5–24 V AC/DC-Adapter Operating Range Analog Inputs with Ratiometric Programming via Resistors or DAC/GPIO Host Control – Charge Voltage (4–4.512 V/cell) – Charge Current (up to 10 A, with 10-mΩ Sense Resistor) – Adapter Current Limit (DPM) Status and Monitoring Outputs – AC/DC Adapter Present with Programmable Voltage Threshold – DPM Loop Active – Current Drawn from Input Source Supports Any Battery Chemistry: Li+, NiCd, NiMH, Lead Acid, etc. Charge Enable 10-µA Off-State Current 28-pin, 5x5-mm QFN package TS • • • AGND FEATURES 1 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006–2009, Texas Instruments Incorporated bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION (CONTINUED) The bq24750 charges two, three, or four series Li+ cells, supporting up to 10 A of charge current, and is available in a 28-pin, 5x5-mm QFN package. The bq24750 controls external switches to prevent battery discharge back to the input, connect the adapter to the system, and to connect the battery to the system using 6-V gate drives for better system efficiency. For maximum system safety, inrush-power limiting provides instantaneous response to high input voltage multiplied by current. This AC Over-Power protection (ACOP) feature limits the input-switch power to the programmed level on the ACOP pin, and latches off if the high-power condition persists to prevent overheating. The bq24750 features Dynamic Power Management (DPM) and input power limiting. These features reduce battery charge current when the input power limit is reached to avoid overloading the AC adapter when supplying the load and the battery charger simultaneously. A highly-accurate current-sense amplifier enables precise measurement of input current from the AC adapter to monitor the overall system power. ADAPTER + SYSTEM R10 2Ω ADAPTER - C1 2.2 µF R1 P Q1 (ACFET) SI4435 C6 10 µF RAC 0.010 Ω P C7 10 µF Q2 (ACFET) SI4435 C3 C2 0.1 µF 432 kΩ 1% 0.1 µF ACN PVCC C8 0.1 µF ACP ACDRV Q3(BATFET) SI4435 BATDRV ACDET 66.5 kΩ 1% ACGOOD PACK THERMISTER SENSE VREF R5 10 kΩ R3 5.6 kΩ 1% Q4 FDS6680A HIDRV AGND VREF bq24750 N R2 L1 8.2 µH PH TS REGN R4 118 kΩ 1% PACK+ D1 BAT54 C9 0.1 µF C10 1 µF LODRV N C4 1 µF SRN CELLS BAT C15 0.1 µF CHGEN ACOP VDAC C16 0.47 µF DAC VADJ ADC A. C14 0.1 µF SRP DPMDET GPIO PACK- PGND VREF R6 10 kΩ C12 10 µF C11 10 µF C13 0.1 µF Q5 FDS6680A SRSET ACSET HOST RSR 0.010 Ω BTST ACGOOD DAC P IADAPT PowerPad C5 100 pF VIN= 20 V, VBAT = 3-cell Li-Ion, ICHARGE = 3 A, IADAPTER_LIMIT = 4 A, TBAT = 0-45°C Figure 1. Typical System Schematic, Voltage and Current Programmed by DAC 2 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 ADAPTER + SYSTEM R10 2Ω ADAPTER - P C1 2.2 µF R1 Q1 (ACFET) SI4435 C7 10 µF Q2 (ACFET) SI4435 C3 C2 0.1 µF 432 kΩ 1% C6 10 µF RAC 0.010 Ω P ACN 0.1 µF PVCC C8 0.1 µF ACP ACDRV Q3(BATFET) SI4435 BATDRV ACDET 66.5 kΩ 1% VREF R5 10 kΩ R3 5.6 kΩ 1% ACGOOD PACK THERMISTER SENSE VREF R8 100 kΩ bq24750 REGN R7 100 kΩ C9 0.1 µF C10 1 µF LODRV ACSET N C4 1 µF GPIO SRN CELLS BAT C15 0.1 µF CHGEN VREF ACOP VDAC C16 0.47 µF REGN VADJ A. C14 0.1 µF SRP DPMDET ADC PACK- PGND VREF R6 10 kΩ HOST C12 10 µF C11 10 µF C13 0.1 µF Q5 FDS6680A SRSET 43 kΩ R9 66.5 kΩ RSR 0.010 Ω PACK+ D1 BAT54 TS VREF L1 8.2 µH PH BTST ACGOOD R4 118 kΩ 1% R11 Q4 FDS6680A HIDRV AGND VREF N R2 P IADAPT PowerPad C5 100 pF VIN= 20 V, VBAT = 3-cell Li-Ion, ICHARGE = 3 A, IADAPTER_LIMIT = 4 A, TBAT = 0-45°C Figure 2. Typical System Schematic, Voltage and Current Programmed by Resistor ORDERING INFORMATION PART NUMBER PACKAGE bq24750 28-PIN 5 x 5 mm QFN ORDERING NUMBER (Tape and Reel) QUANTITY bq24750RHDT 250 bq24750RHDR 3000 THERMAL CHARACTERISTICS (1) (2) PACKAGE θJA TA = 70 °C POWER RATING DERATING FACTOR ABOVE TA = 25°C QFN – RHD (1) (2) 39°C/W 2.36 W 0.028 W/°C For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com This data is based on using the JEDEC High-K board and the exposed die pad is connected to a Cu pad on the board. This is connected to the ground plane by a 2x3 via matrix. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 3 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com Table 1. TERMINAL FUNCTIONS – 28-PIN QFN TERMINAL NAME NO. DESCRIPTION CHGEN 1 Charge enable active-low logic input. LO enables charge. HI disables charge. ACN 2 Adapter current sense resistor, negative input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to provide differential-mode filtering. An optional 0.1-µF ceramic capacitor is placed from ACN pin to AGND for common-mode filtering. ACP 3 Adapter current sense resistor, positive input. A 0.1-µF ceramic capacitor is placed from ACN to ACP to provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from ACP pin to AGND for common-mode filtering. ACDRV 4 AC adapter to system-switch driver output. Connect directly to the gate of the ACFET P-channel power MOSFET and the reverse conduction blocking P-channel power MOSFET. Connect both FETs as common-source. Connect the ACFET drain to the system-load side. The PVCC should be connected to the common-source node to ensure that the driver logic is always active when needed. If needed, an optional capacitor from gate to source of the ACFET is used to slow down the ON and OFF times. The internal gate drive is asymmetrical, allowing a quick turn-off and slower turn-on in addition to the internal break-before-make logic with respect to the BATDRV. The output goes into linear regulation mode when the input sensed current exceeds the ACOC threshold. ACDRV is latched off after ACOP voltage exceeds 2 V, to protect the charging system from an ACFET-overpower condition. ACDET 5 Adapter detected voltage set input. Program the adapter detect threshold by connecting a resistor divider from adapter input to ACDET pin to AGND pin. Adapter voltage is detected if ACDET-pin voltage is greater than 2.4 V. The IADAPT current sense amplifier is active when the ACDET pin voltage is greater than 0.6 V. Input overvoltage, ACOV, disables charge and ACDRV when ACDET > 3.1 V. ACOV does not latch ACSET 6 Adapter current set input. The voltage ratio of ACSET voltage versus VDAC voltage programs the input current regulation set-point during Dynamic Power Management (DPM). Program by connecting a resistor divider from VDAC to ACSET to AGND; or by connecting the output of an external DAC to the ACSET pin and connect the DAC supply to the VDAC pin. ACOP 7 Input power limit set input. Program the input over-power time constant by placing a ceramic capacitor from ACOP to AGND. The capacitor sets the time that the input current limit, ACOC, can be sustained before exceeding the power-MOSFET power limit. When the ACOP voltage exceeds 2 V, then the ACDRV latches off to protect the charge system from an over-power condition, ACOP. Reset latch by toggling ACDET or PVCC_UVLO. TS 8 Temperature qualification voltage input for battery pack negative temperature coefficient thermistor. Program the hot and cold temperature window with a resistor divider from VREF to TS to AGND. AGND 9 Analog ground. Ground connection for low-current sensitive analog and digital signals. On PCB layout, connect to the analog ground plane, and only connect to PGND through the PowerPad underneath the IC. VREF 10 3.3-V regulated voltage output. Place a 1-µF ceramic capacitor from VREF to AGND pin close to the IC. This voltage could be used for ratiometric programming of voltage and current regulation. VDAC 11 Charge voltage set reference input. Connect the VREF or external DAC voltage source to the VDAC pin. Battery voltage, charge current, and input current are programmed as a ratio of the VDAC pin voltage versus the VADJ, SRSET, and ACSET pin voltages, respectively. Place resistor dividers from VDAC to VADJ, SRSET, and ACSET pins to AGND for programming. A DAC could be used by connecting the DAC supply to VDAC and connecting the output to VADJ, SRSET, or ACSET. VADJ 12 Charge voltage set input. The voltage ratio of VADJ voltage versus VDAC voltage programs the battery voltage regulation set-point. Program by connecting a resistor divider from VDAC to VADJ, to AGND; or, by connecting the output of an external DAC to VADJ, and connect the DAC supply to VDAC. VADJ connected to REGN programs the default of 4.2 V per cell. ACGOOD 13 Valid adapter active-low detect logic open-drain output. Pulled low when Input voltage is above programmed ACDET. Connect a 10-kΩ pullup resistor from ACGOOD to VREF, or to a different pullup-supply rail. BATDRV 14 Battery to system switch driver output. Gate drive for the battery to system load BAT PMOS power FET to isolate the system from the battery to prevent current flow from the system to the battery, while allowing a low impedance path from battery to system and while discharging the battery pack to the system load. Connect this pin directly to the gate of the input BAT P-channel power MOSFET. Connect the source of the FET to the system load voltage node. Connect the drain of the FET to the battery pack positive node. An optional capacitor is placed from the gate to the source to slow-down the switching times. The internal gate drive is asymmetrical to allow a quick turn-off and slower turn-on, in addition to the internal break-before-make logic with respect to the ACDRV. IADAPT 15 Adapter current sense amplifier output. IADAPT voltage is 20 times the differential voltage across ACP-ACN. Place a 100-pF or less ceramic decoupling capacitor from IADAPT to AGND. SRSET 16 Charge current set input. The voltage ratio of SRSET voltage versus VDAC voltage programs the charge current regulation set-point. Program by connecting a resistor divider from VDAC to SRSET to AGND; or by connecting the output of an external DAC to SRSET pin and connect the DAC supply to VDAC pin. BAT 17 Battery voltage remote sense. Directly connect a kelvin sense trace from the battery pack positive terminal to the BAT pin to accurately sense the battery pack voltage. Place a 0.1-µF capacitor from BAT to AGND close to the IC to filter high-frequency noise. 4 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Table 1. TERMINAL FUNCTIONS – 28-PIN QFN (continued) TERMINAL NAME NO. DESCRIPTION SRN 18 Charge current sense resistor, negative input. A 0.1-µF ceramic capacitor is placed from SRN to SRP to provide differential-mode filtering. An optional 0.1-µF ceramic capacitor is placed from SRN pin to AGND for common-mode filtering. SRP 19 Charge current sense resistor, positive input. A 0.1-µF ceramic capacitor is placed from SRN to SRP to provide differential-mode filtering. A 0.1-µF ceramic capacitor is placed from SRP pin to AGND for common-mode filtering. CELLS 20 2, 3 or 4 cells selection logic input. Logic low programs 3 cell. Logic high programs 4 cell. Floating programs 2 cell. DPMDET 21 Dynamic power management (DPM) input current loop active, open-drain output status. Logic low indicates input current is being limited by reducing the charge current. Connect 10-kΩ pullup resistor from DPMDET to VREF or a different pullup-supply rail. Time delay is 10 ms. PGND 22 Power ground. Ground connection for high-current power converter node. On PCB layout, connect directly to source of low-side power MOSFET, to ground connection of in put and output capacitors of the charger. Only connect to AGND through the PowerPad underneath the IC. LODRV 23 PWM low side driver output. Connect to the gate of the low-side power MOSFET with a short trace. REGN 24 PWM low side driver positive 6-V supply output. Connect a 1-µF ceramic capacitor from REGN to PGND, close to the IC. Use for high-side driver bootstrap voltage by connecting a small-signal Schottky diode from REGN to BTST. PH 25 PWM high side driver negative supply. Connect to the phase switching node (junction of the low-side power MOSFET drain, high-side power MOSFET source, and output inductor). Connect the 0.1-µF bootstrap capacitor from from PH to BTST. HIDRV 26 PWM high side driver output. Connect to the gate of the high-side power MOSFET with a short trace. BTST 27 PWM high side driver positive supply. Connect a 0.1-µF bootstrap ceramic capacitor from BTST to PH. Connect a small bootstrap Schottky diode from REGN to BTST. PVCC 28 IC power positive supply. Connect to the common-source (diode-OR) point: source of high-side P-channel MOSFET and source of reverse-blocking power P-channel MOSFET. Place a 1-µF ceramic capacitor from PVCC to PGND pin close to the IC. PowerPad Exposed pad beneath the IC. AGND and PGND star-connected only at the PowerPad plane. Always solder PowerPad to the board, and have vias on the PowerPad plane connecting to AGND and PGND planes. It also serves as a thermal pad to dissipate the heat. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) (2) VALUE PVCC, ACP, ACN, SRP, SRN, BAT, BATDRV, ACDRV Voltage range PH –1 to 30 REGN, LODRV, VADJ, ACSET, SRSET, TS, ACDET, ACOP, CHGEN, CELLS, ACGOOD –0.3 to 7 V VDAC –0.3 to 5.5 VREF, IADAPT –0.3 to 3.6 BTST, HIDRV with respect to AGND and PGND –0.3 to 36 Maximum difference voltage ACP–ACN, SRP–SRN, AGND–PGND –0.5 to 0.5 Junction temperature range –40 to 155 Storage temperature range –55 to 155 (1) (2) UNIT –0.3 to 30 V °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the data book for thermal limitations and considerations of packages. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 5 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN PH Voltage range NOM MAX –1 24 PVCC, ACP, ACN, SRP, SRN, BAT, BATDRV, ACDRV 0 24 REGN, LODRV 0 6.5 VDAC, IADAPT 0 VREF UNIT 3.6 3.3 V ACSET, SRSET, TS, ACDET, ACOP, CHGEN, CELLS, ACGOOD, DPMDET 0 5.5 VADJ 0 6.5 BTST, HIDRV with respect to AGND and PGND 0 30 0.3 AGND, PGND –0.3 Maximum difference voltage: ACP–ACN, SRP–SRN –0.3 0.3 Junction temperature range –40 125 Storage temperature range –55 150 V °C ELECTRICAL CHARACTERISTICS 7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OPERATING CONDITIONS VPVCC_OP PVCC Input voltage operating range 5 24 V CHARGE VOLTAGE REGULATION VBAT_REG_RNG BAT voltage regulation range VVDAC_OP VDAC reference voltage range VADJ_OP VADJ voltage range 4-4.512 V per cell, times 2,3,4 cells Charge voltage regulation accuracy Charge voltage regulation set to default to 4.2 V per cell 8 18.048 V 2.6 3.6 V V 0 REGN 8 V, 8.4 V, 9.024 V –0.5% 0.5% 12 V, 12.6 V, 13.536 V –0.5% 0.5% 16 V, 16.8 V, 18.048 V –0.5% 0.5% VADJ connected to REGN, 8.4 V, 12.6 V, 16.8 V –0.5% 0.5% 0 100 0 VDAC VIREG_CHG = 40–100 mV –3% 3% VIREG_CHG = 20 mV –5% 5% VIREG_CHG = 5 mV –25% 25% VIREG_CHG = 1.5 mV (VBAT>4V) –33% 33% 0 100 0 VDAC –3% 3% CHARGE CURRENT REGULATION VIREG_CHG Charge current regulation differential voltage range VSRSET_OP SRSET voltage range Charge current regulation accuracy VIREG_CHG = VSRP – VSRN mV V INPUT CURRENT REGULATION VIREG_DPM Adapter current regulation differential voltage range VACSET_OP ACSET voltage range VIREG_DPM = VACP – VACN VIREG_DPM = 40–100 mV Input current regulation accuracy 6 VIREG_DPM = 20 mV –5% 5% VIREG_DPM = 5 mV –25% 25% VIREG_DPM = 1.5 mV –33% 33% Submit Documentation Feedback mV V Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 ELECTRICAL CHARACTERISTICS (continued) 7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 3.267 3.3 3.333 V VREF REGULATOR VVREF_REG VREF regulator voltage VACDET > 0.6 V, 0-30 mA IVREF_LIM VREF current limit VVREF = 0 V, VACDET > 0.6 V 35 75 mA 6.2 V mA REGN REGULATOR VREGN_REG REGN regulator voltage VACDET > 0.6 V, 0-75 mA, PVCC > 10 V 5.6 5.9 IREGN_LIM REGN current limit VREGN = 0 V, VACDET > 0.6 V 90 135 0 24 0 2 ADAPTER CURRENT SENSE AMPLIFIER VACP/N_OP Input common mode range Voltage on ACP/ACN VIADAPT IADAPT output voltage range IIADAPT IADAPT output current AIADAPT Current sense amplifier voltage gain 0 AIADAPT = VIADAPT / VIREG_DPM VIREG_DPM = 40–100 mV Adapter current sense accuracy 1 20 –2% 2% –3% 3% VIREG_DPM = 5 mV –25% 25% VIREG_DPM = 1.5 mV –33% 33% Output current limit VIADAPT = 0 V CIADAPT_MAX Maximum output load capacitance For stability with 0 mA to 1 mA load mA V/V VIREG_DPM = 20 mV IIADAPT_LIM V 1% mA 100 pF 2.424 V ACDET COMPARATOR VACDET_CHG ACDET adapter-detect rising threshold Min voltage to enable charging, VACDET rising VACDET_CHG_HYS ACDET falling hysteresis VACDET falling ACDET rising deglitch 2.376 2.40 VACDET rising 518 700 908 ms ACDET falling deglitch VACDET falling 7 9 11 ms VACDET_BIAS ACDET enable-bias rising threshold Min voltage to enable all bias, VACDET rising 0.56 0.62 VACDET_BIAS_HYS Adapter present falling hysteresis VACDET falling 20 mV ACDET rising deglitch VACDET rising 10 µs ACDET falling deglitch VACDET falling 10 µs 40 mV 0.68 V PVCC / BAT COMPARATOR (REVERSE DISCHARGING PROTECTION) VPVCC-BAT_OP Differential Voltage from PVCC to BAT VPVCC-BAT_FALL PVCC to BAT falling threshold VPVCC-BAT__HYS PVCC to BAT hysteresis –20 VPVCC – VBAT to turn off ACFET 140 24 185 240 50 PVCC to BAT Rising Deglitch VPVCC – VBAT > VPVCC-BAT_RISE PVCC to BAT Falling Deglitch VPVCC – VBAT < VPVCC-BAT_FALL 7 9 V mV mV 11 ms µs 6 INPUT UNDERVOLTAGE LOCK-OUT COMPARATOR (UVLO) UVLO AC Undervoltage rising threshold UVLOHYS AC Undervoltage hysteresis, falling Measured on PVCC 3.5 4 4.5 260 V mV ACN / BAT COMPARATOR VACN-BAT_FALL ACN to BAT falling threshold VACN-BAT_HYS ACN to BAT hysteresis VACN – VBAT to turn on BATDRV 175 285 340 mV 50 mV ACN to BAT rising deglitch VACN – VBAT > VACN-BAT_RISE 20 µs ACN to BAT falling deglitch VACN – VBAT < VACN-BAT_FALL 6 µs BAT OVERVOLTAGE COMPARATOR VOV_RISE Overvoltage rising threshold As percentage of VBAT_REG 104 % VOV_FALL Overvoltage falling threshold As percentage of VBAT_REG 102 % Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 7 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS (continued) 7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CHARGE OVERCURRENT COMPARATOR VOC Charge overcurrent falling threshold 145 % As percentage of IREG_CHG Minimum Current Limit (SRP-SRN) 50 mV CHARGE UNDERCURRENT COMPARATOR (SYNCHRONOUS TO NON-SYNCHRONOUS TRANSITION) VISYNSET_FALL Charge undercurrent falling threshold VISYNSET_HYS Charge undercurrent rising hysteresis Charge undercurrent, falling-current deglitch Charge undercurrent, rising-current deglitch Changing from synchronous to non-sysnchronous 9.75 13 16.25 8 mV mV 20 µs VIREG_DPM < VISYNSET 640 INPUT OVERPOWER COMPARATOR (ACOP) VACOC ACOC Gain for initial ACOC current Begins 700 ms after ACDET limit limit (Percentage of programmed Input current limited to this threshold for VIREG_DPM) fault protection 150 % VIREG_DPM VACOC_CEILING Maximum ACOC input current limit (VACP–VACN)max Internally limited ceiling VACOC_MAX = (VACP–VACN)max 100 mV ACOP Latch Blankout Time with ACOC active (begins 700 ms after ACDET) Begins 700 ms after ACDET (does not allow ACOP latch-off, and no ACOP source current) 2 ms VACOP ACOP pin latch-off threshold voltage (See ACOP in Terminal Functions table ) KACOP Gain for ACOP Source Current when in ACOC Current source on when in ACOC limit. Function of voltage across power FET IACOP_SOURCE = KACOP ×(VPVCC -VACP) IACOP_SINK ACOP Sink Current when not in ACOC ACOP Latch is reset by going below ACDET or UVLO Current sink on when not in ACOC 1.95 2 2.05 V 18 µA / V 5 µA INPUT OVERVOLTAGE COMPARATOR (ACOV) AC Overvoltage rising threshold on ACDET (See ACDET in Terminal Functions) VACOV VACOV_HYS Measured on ACDET 3.007 3.1 AC Overvoltage rising deglitch 1.3 AC Overvoltage falling deglitch 1.3 3.193 V ms THERMAL SHUTDOWN COMPARATOR TSHUT Thermal shutdown rising temperature TSHUT_HYS Thermal shutdown hysteresis, falling Temperature Increasing 155 °C 20 °C THERMISTER COMPARATOR (TS) 73.8 % 74.2% 0.5% 1% 1.5% 29.9% 35.1% VLTF Cold temperature rising threshold As percentage to VVREF 72.5% VLTF_HYS Rising hysteresis As percentage to VVREF VTCO Cut-off temperature rising threshold As percentage to VVREF 28.7% 29.3 % VHTF Hot temperature rising threshold As percentage to VVREF 33.7% 34.4 % Deglitch time for temperature out of range detection VTS > VLTF, or VTS < VTCO, or VTS < VHTF 10 Deglitch time for temperature in valid range detection VTS > VLTF – VLTF_HYS or VTS > VTCO, or VTS > VHTF 10 8 Submit Documentation Feedback ms Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 ELECTRICAL CHARACTERISTICS (continued) 7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BATTERY SWITCH (BATDRV) DRIVER RDS(off)_BAT BATFET Turn-off resistance VACN > 5 V 160 Ω RDS(on)_BAT BATFET Turn-on resistance VACN > 5 V 3 kΩ BATFET drive voltage VBATDRV_REG = VACN – VBATDRV when VACN > 5 V and BATFET is on BATFET Power-up delay Delay to turn off BATFET after adapter is detected (after ACDET > 2.4) VBATDRV_REG 6.5 518 700 V 908 ms AC SWITCH (ACDRV) DRIVER RDS(off)_AC ACFET turn-off resistance VPVCC > 5 V 80 Ω RDS(on)_AC ACFET turn-on resistance VPVCC > 5 V 2.5 kΩ ACFET drive voltage VACDRV_REG = VPVCC – VACDRV when VPVCC > 5 V and ACFET is on ACFET Power-up Delay Delay to turn on ACFET after adapter is detected (after ACDET > 2.4) VACDRV_REG 6.5 518 700 V 908 ms AC / BAT MOSFET DRIVERS TIMING Dead time when switching between ACDRV and BATDRV Driver dead time µs 10 PWM HIGH SIDE DRIVER (HIDRV) RDS_HI_ON High side driver (HSD) turn-on resistance VBTST – VPH = 5.5 V, tested at 100 mA 3 6 Ω RDS_HI_OFF High side driver turn-off resistance VBTST – VPH = 5.5 V, tested at 100 mA 0.7 1.4 Ω VBTST_REFRESH Bootstrap refresh comparator threshold voltage VBTST – VPH when low side refresh pulse is requested 4 V PWM LOW SIDE DRIVER (LODRV) RDS_LO_ON Low side driver (LSD) turn-on resistance REGN = 6 V, tested at 100 mA 3 6 Ω RDS_LO_OFF Low side driver turn-off resistance REGN = 6 V, tested at 100 mA 0.6 1.2 Ω PWM DRIVERS TIMING Driver Dead Time — Dead time when switching between LODRV and HIDRV. No load at LODRV and HIDRV 30 ns PWM OSCILLATOR FSW PWM switching frequency VRAMP_HEIGHT PWM ramp height 240 As percentage of PVCC 360 6.6 kHz %PVCC QUIESCENT CURRENT IOFF_STATE Total off-state quiescent current into pins: SRP, SRN, BAT, BTST, PH, PVCC, ACP, ACN VBAT = 16.8 V, VACDET < 0.6 V, VPVCC > 5 V, TJ = 0 to 85°C 7 10 µA IAC Adapter quiescent current VPVCC = 20 V, charge disabled 2.8 4 mA IBATQ_CD Total quiescent current into pins: SRP, SRN, BAT, BTST, PH Adapter present, VACDET>2.4V, charge disabled 100 200 µA INTERNAL SOFT START (8 steps to regulation current) Soft start steps Soft start step time 8 step 1.7 ms CHARGER SECTION POWER-UP SEQUENCING Charge-enable delay after power-up Delay from when adapter is detected to when the charger is allowed to turn on 518 700 908 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 ms 9 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS (continued) 7 V ≤ VPVCC ≤ 24 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LOGIC INPUT PIN CHARACTERISTICS (CHGEN) VIN_LO Input low threshold voltage VIN_HI Input high threshold voltage IBIAS Input bias current 0.8 2.1 VCHGEN = 0 to VREGN 1 V µA LOGIC INPUT PIN CHARACTERISTICS (CELLS) VIN_LO Input low threshold voltage, 3 cells CELLS voltage falling edge VIN_MID Input mid threshold voltage, 2 cells CELLS voltage rising for MIN, CELLS voltage falling for MAX 0.5 0.8 VIN_HI Input high threshold voltage, 4 cells CELLS voltage rising 2.5 IBIAS_FLOAT Input bias float current for 2-cell selection VCHGEN = 0 to VREGN –1 1.8 V 1 µA OPEN-DRAIN LOGIC OUTPUT PIN CHARACTERISTICS (ACGOOD) VOUT_LO Output low saturation voltage Sink Current = 4 mA Delay, ACGOOD falling 518 Delay, ACGOOD rising 700 0.5 V 908 ms µs 10 OPEN-DRAIN LOGIC OUTPUT PIN CHARACTERISTICS ( DPMDET ) VOUT_LO Output low saturation voltage Sink Current = 5 mA Delay, DPMDET rising/falling 10 0.5 10 Submit Documentation Feedback V ms Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 TYPICAL CHARACTERISTICS Table of Graphs (1) Y-Axis X-Axis Figure VREF Load and Line Regulation vs Load Current Figure 3 REGN Load and Line Regulation vs Load Current Figure 4 BAT Voltage vs VADJ/VDAC Ratio Figure 5 Charge Current vs SRSET/VDAC Ratio Figure 6 Input Current vs ACSET/VDAC Ratio Figure 7 BAT Voltage Regulation Accuracy vs Charge Current Figure 8 BAT Voltage Regulation Accuracy Figure 9 Charge Current Regulation Accuracy Figure 10 Input Current Regulation (DPM) Accuracy Figure 11 VIADAPT Input Current Sense Amplifier Accuracy Input Regulation Current (DPM), and Charge Current Figure 12 vs System Current Figure 13 Transient System Load (DPM) Response Figure 14 Charge Current Regulation vs BAT Voltage Figure 15 Efficiency vs Battery Charge Current Figure 16 Battery Removal (from Constant Current Mode) Figure 17 ACDRV and BATDRV Startup Figure 18 REF and REGN Startup Figure 19 System Selector on Adapter Insertion with 390-µF SYS-to-PGND System Capacitor Figure 20 System Selector on Adapter Removal with 390-µF SYS-to-PGND System Capacitor Figure 21 System Selector on Adapter Insertion Figure 22 Selector Gate Drive Voltages, 700 ms delay after ACDET Figure 23 Charger on Adapter Removal Figure 24 Charge Enable / Disable and Current Soft-Start Figure 25 Nonsynchronous to Synchronous Transition Figure 26 Synchronous to Nonsynchronous Transition Figure 27 Near 100% Duty Cycle Bootstrap Recharge Pulse Figure 28 Battery Shorted Charger Response, Over Current Protection (OCP) and Charge Current Regulation Figure 29 Continuous Conduction Mode (CCM) Switching Waveforms Figure 30 Discontinuous Conduction Mode (DCM) Switching Waveforms Figure 31 (1) Test results based on Figure 2 application schematic. VIN = 20 V, VBAT = 3-cell Li+, ICHG = 3 A, IADAPTER_LIMIT = 4 A, TA = 25°C, unless otherwise specified. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 11 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com VREF LOAD AND LINE REGULATION vs Load Current REGN LOAD AND LINE REGULATION vs LOAD CURRENT 0 0.50 -0.50 Regulation Error - % Regulation Error - % 0.40 0.30 PVCC = 10 V 0.20 0.10 0 -1 -1.50 PVCC = 10 V -2 PVCC = 20 V -2.50 -0.10 PVCC = 20 V -0.20 -3 0 10 20 30 VREF - Load Current - mA 40 50 0 20 Figure 4. BAT VOLTAGE vs VADJ/VDAC RATIO CHARGE CURRENT vs SRSET/VDAC RATIO 70 80 10 VADJ = 0 -VDAC, 4-Cell, No Load 17.8 SRSET Varied, 4-Cell, Vbat = 16 V 9 Charge Current Regulation - A 18 17.6 17.4 17.2 17 16.8 16.6 16.4 8 7 6 5 4 3 2 1 16.2 0 16 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 0.1 0.2 VADJ/VDAC Ratio 0.3 0.4 0.5 0.6 0.7 SRSET/VDAC Ratio 0.8 0.9 Figure 5. Figure 6. INPUT CURRENT vs ACSET/VDAC RATIO BAT VOLTAGE REGULATION ACCURACY vs CHARGE CURRENT 1 0.2 10 ACSET Varied, 4-Cell, Vbat = 16 V 9 8 Vreg = 16.8 V Regulation Error - % Input Current Regulation - A 30 40 50 60 REGN - Load Current - mA Figure 3. 18.2 Voltage Regulation - V 10 7 6 5 4 3 0.1 0 -0.1 2 1 -0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ACSET/VDAC Ratio 0.8 0.9 1 0 Figure 7. 12 2000 4000 Charge Current - mA 6000 8000 Figure 8. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 BAT VOLTAGE REGULATION ACCURACY CHARGE CURRENT REGULATION ACCURACY 0.10 2 SRSET Varied 0 0.06 -1 0.04 Regulation Error - % Regulation Error - % 4-Cell, VBAT = 16 V 1 VADJ = 0 -VDAC 0.08 4-Cell, no load 0.02 0 -0.02 -0.04 -0.06 -2 -3 -4 -5 -6 -7 -8 -0.08 -9 -0.10 16.5 -10 17 17.5 18 18.5 0 19 2 4 I(CHRG) - Setpoint - A V(BAT) - Setpoint - V 8 Figure 9. Figure 10. INPUT CURRENT REGULATION (DPM) ACCURACY VIADAPT INPUT CURRENT SENSE AMPLIFIER ACCURACY 5 10 ACSET Varied 9 0 8 7 4-Cell, VBAT = 16 V 6 Percent Error Regulation Error - % 6 5 4 3 2 VI = 20 V, CHG = EN -5 VI = 20 V, CHG = DIS -10 -15 1 0 -20 -1 -2 -25 Iadapt Amplifier Gain 0 1 2 3 4 Input Current Regulation Setpoint - A 5 6 0 1 2 3 4 5 6 I(ACPWR) - A 7 8 9 Figure 11. Figure 12. INPUT REGULATION CURRENT (DPM), AND CHARGE CURRENT vs SYSTEM CURRENT TRANSIENT SYSTEM LOAD (DPM) RESPONSE 10 5 VI = 20 V, 4-Cell, Vbat = 16 V 4 Ichrg and Iin - A Input Current 3 System Current Charge Current 2 1 0 0 1 2 System Current - A 3 4 Figure 13. Figure 14. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 13 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com CHARGE CURRENT REGULATION vs BAT VOLTAGE EFFICIENCY vs BATTERY CHARGE CURRENT 5 100 V(BAT) = 16.8 V Efficiency - % Charge Current - A 4 3 2 Vreg = 12.6 V 90 Vreg = 8.4 V 80 1 Ichrg_set = 4 A 70 0 2 4 6 8 10 12 Battery Voltage - V 14 16 18 0 2000 6000 4000 Battery Charge Current - mA Figure 15. Figure 16. BATTERY REMOVAL ACDRV AND BATDRV STARTUP Ch1 2 V/div 0 8000 Ch2 20 V/div VACDET Ch3 5 V/div VBATDRV Ch4 5 V/div VACDRV VACGOOD t − Time = 100 ms/div Figure 18. REF AND REGN STARTUP SYSTEM SELECTOR ON ADAPTER INSERTION WITH 390 µF SYS-TO-PGND SYSTEM CAPACITOR Ch4 10 V/div Ch3 Ch2 Ch1 10 V/div 20 V/div 20 V/div Figure 17. VBAT VSYS VACDRV VBATDRV t − Time = 400 ms/div Figure 19. 14 Figure 20. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Ch3 Ch2 Ch1 5 V/div 20 V/div 20 V/div SYSTEM SELECTOR ON ADAPTER INSERTION VBAT VSYS VACDRV VACPWR VACDRV VACGOOD VBATDRV Ch4 5 A/div Ch4 10 V/div Ch3 Ch2 Ch1 10 V/div 20 V/div 20 V/div SYSTEM SELECTOR ON ADAPTER REMOVAL WITH 390 µF SYS-TO-PGND SYSTEM CAPACITOR IL t − Time = 2 ms/div t − Time = 400 ms/div SELECTOR GATE DRIVE VOLTAGES, 700 MS DELAY AFTER ACDET CHARGER ON ADAPTER REMOVAL Ch4 Ch1 5 V/div 5 V/div Figure 22. Ch1 5 V/div Figure 21. Ch3 Ch4 Ch2 5 A/div 500 mV/div 5 V/div VSYS VBAT Ch3 2 A/div VACDRV VIN VACOP IL IIN t − Time = 200 ms/div Figure 24. CHARGE ENABLE / DISABLE AND CURRENT SOFT-START NONSYNCHRONOUS TO SYNCHRONOUS TRANSITION Ch1 10 V/div Figure 23. VCHGEN Ch2 Ch3 Ch4 2 A/div 5 V/div 10 V/div Ch3 2 A/div Ch2 20 V/div Ch4 1 V/div Ch1 10 V/div t − Time = 1 ms/div VBAT VPH VHIDRV VPH VLDDRV IL IBAT t − Time = 4 ms/div t − Time = 4 ms/div Figure 25. Figure 26. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 15 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com NEAR 100% DUTY CYCLE BOOTSTRAP RECHARGE PULSE Ch2 Ch1 20 V/div 20 V/div SYNCHRONOUS TO NONSYNCHRONOUS TRANSITION Ch2 10 V/div VPH Ch4 Ch3 2 A/div 5 V/div Ch3 2 A/div Ch4 5 V/div VLODRV IL VPH VHIDRV VLODRV IL t − Time = 4 ms/div Figure 28. BATTERY SHORTED CHARGER RESPONSE, OVERCURRENT PROTECTION (OCP) AND CHARGE CURRENT REGULATION CONTINUOUS CONDUCTION MODE (CCM) SWITCHING WAVEFORMS Ch1 20 V/div Figure 27. VBAT Ch3 2 A/div Ch3 5 V/div Ch2 20 V/div Ch4 10 V/div t − Time = 2 ms/div Ch4 5 A/div IL VPH VHIDRV VLODRV IL t − Time = 400 ms/div t − Time = 1 ms/div Figure 29. Figure 30. Ch4 2 A/div Ch3 5 V/div Ch2 20 V/div Ch1 20 V/div DISCONTINUOUS CONDUCTION MODE (DCM) SWITCHING WAVEFORMS VPH VHIDRV VLODRV IL t − Time = 1 ms/div Figure 31. 16 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 FUNCTIONAL BLOCK DIAGRAM 700ms ENA_BIAS - 0.6V + - 2.4V ADAPTER DETECTED + ACDET ACGOOD Delay Rising VREF PVCC ACOP + + BAT ACOPDET PVCC-6V 185mV S Q R Q PVCC PVCC- BAT - 5 µA + 2V - ENA_SNK PVCC-6V LDO _ _ + Isrc=K*V(PVCC-ACP) K=18 µA/V ENA_SRC PVCC ENA_BIAS ACOP_LATCH SYSTEM POWER SELECTOR LOGIC ACDET PVCC_UVLO CHGEN ACDRV PVCC-6V ACN ENA_BIAS 3.3V LDO VREF EAI PVCC EAO BATDRV ACN-6V ACP ACFET_ON FBO + - V(ACP-ACN) 20x IIN_REG - IIN_ER COMP ERROR AMPLIFIER + ACN + V(ACN-BAT) _ + _ 285mV + 1V BAT VBAT_REG BTST CHGEN BAT_OVP BAT_ER LEVEL SHIFTER CHG_OCP + 20uA HIDRV ACOV ACOP SRP V(ACN-BAT) 3.5 mA + – SRN V(SRP-SRN) - 20x IBAT_ REG ICH_ER UVLO + 20 µA PVCC ACLOWV 3.5 mA SYNCH BTST CHRG_ON PH DC-DC CONVERTER PWM LOGIC - REGN 6V LDO ENA_BIAS REFRESH CBTST LODRV + V(SRP - SRN) + + 4V _ SYNCH - ACSET PH 13 mV +- IC Tj + 155°C - PGND TSHUT ACP SRSET VADJ VBATSET IBATSET IINSET VBAT_REG RATIO PROGRAM IIN_REG BAT + 104% X VBAT_REG - V(SRP-SRN) + 145% X IBAT_REG - ACDET + ACN BAT_OVP IBAT_REG + 20x - V(IADAPT) IADAPT DPM_LOOP_ON DPMDET CHG_OCP VREF VDAC ACOV 3.1 V + - LTF + CELLS PVCC - TS UVLO HTF + 4V AGND + - + - SUSPEND TCO + - bq24750 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 17 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com DETAILED DESCRIPTION Battery Voltage Regulation The bq24750 uses a high-accuracy voltage regulator for the charging voltage. The internal default battery-voltage setting is VBATT = 4.2 V × cell count. The regulation voltage is ratiometric with respect to VDAC. The ratio of VADJ and VDAC provides an extra 12.5% adjustment range on the VBATT regulation voltage. By limiting the adjustment range to 12.5% of the regulation voltage, the external resistor mismatch error is reduced from ±1% to ±0.1%. Therefore, an overall voltage accuracy as good as 0.5% is maintained, even while using 1%-mismatched resistors. Ratiometric conversion also allows compatibility with D/As or microcontrollers (µC). The battery voltage is programmed through VADJ and VDAC using Equation 1. é æ V VBATT = cell count ´ ê 4 V + ç 0.512 ´ VADJ VVDAC êë è öù ÷ú ø úû (1) REGN – Vt = REGN – 0.5 V The input voltage range of VDAC is between 2.6 V and 3.6 V. VADJ is set between 0 and VDAC. VBATT defaults to 4.2 V × cell count when VADJ is connected to REGN. CELLS pin is the logic input for selecting cell count. Connect CELLS to charge 2,3, or 4 Li+ cells. When charging other cell chemistries, use CELLS to select an output voltage range for the charger. CELLS CELL COUNT Float 2 AGND 3 VREF 4 The per-cell charge-termination voltage is a function of the battery chemistry. Consult the battery manufacturer to determine this voltage. The BAT pin is used to sense the battery voltage for voltage regulation and should be connected as close to the battery as possible, or directly on the output capacitor. A 0.1-µF ceramic capacitor from BAT to AGND is recommended to be as close to the BAT pin as possible to decouple high frequency noise. Battery Current Regulation The SRSET input sets the maximum charge current. Battery current is sensed by resistor RSR connected between SRP and SRN. The full-scale differential voltage between SRP and SRN is 100 mV. Thus, for a 0.010-Ω sense resistor, the maximum charging current is 10 A. SRSET is ratiometric with respect to VDAC using Equation 2: V I CHARGE + SRSET 0.10 VVDAC R SR (2) The input voltage range of SRSET is between 0 and VDAC, up to 3.6 V. The SRP and SRN pins are used to sense across RSR, with a default value of 10 mΩ. However, resistors of other values can also be used. A larger sense-resistor value yields a larger sense voltage, and a higher regulation accuracy. However, this is at the expense of a higher conduction loss. Input Adapter Current Regulation The total input current from an AC adapter or other DC sources is a function of the system supply current and the battery charging current. System current normally fluctuates as portions of the systems are powered up or down. Without Dynamic Power Management (DPM), the source must be able to supply the maximum system current and the maximum charger input current simultaneously. By using DPM, the input current regulator reduces the charging current when the input current exceeds the input current limit set by ACSET. The current capacity of the AC adapter can be lowered, reducing system cost. Similar to setting battery regulation current, adapter current is sensed by resistor RAC connected between ACP and ACN. Its maximum value is set ACSET, which is ratiometric with respect to VDAC, using Equation 3. 18 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 V I ADAPTER + ACSET VVDAC 0.10 R AC (3) The input voltage range of ACSET is between 0 and VDAC, up to 3.6 V. The ACP and ACN pins are used to sense RAC with a default value of 10 mΩ. However, resistors of other values can also be used. A larger sense-resistor value yields a larger sense voltage, and a higher regulation accuracy. However, this is at the expense of a higher conduction loss. Adapter Detect and Power Up An external resistor voltage divider attenuates the adapter voltage before it goes to ACDET. The adapter-detect threshold should typically be programmed to a value greater than the maximum battery voltage, and lower than the minimum allowed adapter voltage. The ACDET divider should be placed before the ACFET in order to sense the true adapter input voltage whether the ACFET is on or off. Before the adapter is detected, BATFET stays on and ACFET turns off. If PVCC is below 4 V, the device is disabled. If ACDET is below 0.6 V but PVCC is above 4 V, part of the bias is enabled, including a crude bandgap reference, ACFET drive and BATFET drive. IADAPT is disabled and pulled down to GND. The total quiescent current is less than 10 µA. When ACDET rises above 0.6 V and PVCC is above 4 V, all the bias circuits are enabled and the REGN output goes to 6 V and VREF goes to 3.3 V. IADAPT becomes valid to proportionally reflect the adapter current. When ACDET keeps rising and passes 2.4 V, a valid AC adapter is present. 700 ms later, the following occurs: • ACGOOD goes low through external pull-up resistor to the host digital voltage rail; • ACFET can turn on and BATFET turns off consequently; (refer to System Power Selector) • Charging begins if all the conditions are satisfied. (refer to Enable and Disable Charging) Enable and Disable Charging The following conditions must be valid before charge is enabled: • CHGEN is LOW • PVCC > UVLO • Adapter is detected • Adapter voltage is higher than BAT + 185 mV • Adapter is not over voltage (ACOV) • 700 ms delay is complete after the adapter is detected plus 10 ms ACOC time • Thermal Shut (TSHUT) is not valid • TS is within the temperature qualification window • VDAC > 2.4 V System Power Selector The bq24750 automatically switches between connecting the adapter or battery power to the system load. By default, the battery is connected to the system during power up or when a valid adapter is not present. When the adapter is detected, the battery is first disconnected from the system, then the adapter is connected. An automatic break-before-make algorithm prevents shoot-through currents when the selector transistors switch. The ACDRV signal drives a pair of back-to-back p-channel power MOSFETs (with sources connected together and to PVCC) connected between the adapter and ACP. The FET connected to the adapter prevents reverse discharge from the battery to the adapter when it is turned off. The p-channel FET with the drain connected to the adapter input provides reverse battery discharge protection when off; and also minimizes system power dissipation, with its low Rdson, compared to a Schottky diode. The other p-channel FET connected to ACP separates the battery from the adapter, and provides both ACOC current limit and ACOP power limit to the system. The BATDRV signal controls a p-channel power MOSFET placed between BAT and the system. When the adapter is not detected, the ACDRV output is pulled to PVCC to turn off the ACFET, disconnecting the adapter from system. BATDRV stays at ACN – 6 V to connect the battery to system. Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 19 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com At 700 ms after adapter is detected, the system begins to switch from the battery to the adapter. The PVCC voltage must be 185 mV above BAT to enable the switching. The break-before-make logic turns off both ACFET and BATFET for 10µs before ACFET turns on. This isolates the battery from shoot-through current or any large discharging current. The BATDRV output is pulled up to ACN and the ACDRV pin is set to PVCC – 6 V by an internal regulator to turn on the p-channel ACFET, connecting the adapter to the system. When the adapter is removed, the system waits till ACN drops back to within 285 mV above BAT to switch from the adapter back to the battery. The break-before-make logic ensures a 10-µs dead time. The ACDRV output is pulled up to PVCC and the BATDRV pin is set to ACN – 6 V by an internal regulator to turn on the p-channel BATFET, connecting the battery to the system. Asymmetrical gate drive for the ACDRV and BATDRV drivers provides fast turn-off and slow turn-on of the ACFET and BATFET to help the break-before-make logic and to allow a soft-start at turn-on of either FET. The soft-start time can be further increased, by putting a capacitor from gate to source of the p-channel power MOSFETs. Automatic Internal Soft-Start Charger Current The charger automatically soft-starts the charger regulation current every time the charger is enabled to ensure there is no overshoot or stress on the output capacitors or the power converter. The soft-start consists of stepping-up the charger regulation current into 8 evenly divided steps up to the programmed charge current. Each step lasts approximately 1.7 ms, for a typical rise time of 13.6 ms. No external components are needed for this function. Converter Operation The synchronous-buck PWM converter uses a fixed-frequency (300 kHz) voltage mode with a feed-forward control scheme. A Type-III compensation network allows the use of ceramic capacitors at the output of the converter. The compensation input stage is internally connected between the feedback output (FBO) and the error-amplifier input (EAI). The feedback compensation stage is connected between the error amplifier input (EAI) and error amplifier output (EAO). The LC output filter is selected for a nominal resonant frequency of 8 kHz–12.5 kHz. fo + The resonant frequency, fo, is given by: • CO = C11 + C12 • LO = L1 1 2p ǸLoC o where (from Figure 1 schematic) An internal sawtooth ramp is compared to the internal EAO error-control signal to vary the duty cycle of the converter. The ramp height is one-fifteenth of the input adapter voltage, making it always directly proportional to the input adapter voltage. This cancels out any loop-gain variation due to a change in input voltage, and simplifies the loop compensation. The ramp is offset by 200 mV in order to allow a 0% duty cycle when the EAO signal is below the ramp. The EAO signal is also allowed to exceed the sawtooth ramp signal in order to operate with a 100% duty-cycle PWM request. Internal gate-drive logic allows a 99.98% duty-cycle while ensuring that the N-channel upper device always has enough voltage to stay fully on. If the BTST-to-PH voltage falls below 4 V for more than 3 cycles, the high-side N-channel power MOSFET is turned off and the low-side N-channel power MOSFET is turned on to pull the PH node down and recharge the BTST capacitor. Then the high-side driver returns to 100% duty-cycle operation until the (BTST-PH) voltage is detected falling low again due to leakage current discharging the BTST capacitor below 4 V, and the reset pulse is reissued. The 300-kHz fixed-frequency oscillator tightly controls the switching frequency under all conditions of input voltage, battery voltage, charge current, and temperature. This simplifies output-filter design, and keeps it out of the audible noise region. The charge-current sense resistor RSR should be designed with at least half or more of the total output capacitance placed before the sense resistor, contacting both sense resistor and the output inductor; and the other half, or remaining capacitance placed after the sense resistor. The output capacitance should be divided and placed on both sides of the charge-current sense resistor. A ratio of 50:50 percent gives the best performance; but the node in which the output inductor and sense resistor connect should have a minimum of 50% of the total capacitance. This capacitance provides sufficient filtering to remove the switching noise and give better current-sense accuracy. The Type-III compensation provides phase boost near the cross-over frequency, giving sufficient phase margin. 20 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Synchronous and Non-Synchronous Operation The charger operates in non-synchronous mode when the sensed charge current is below the ISYNSET value. Otherwise, the charger operates in synchronous mode. During synchronous mode, the low-side N-channel power MOSFET is on when the high-side N-channel power MOSFET is off. The internal gate-drive logic uses break-before-make switching to prevent shoot-through currents. During the 30-ns dead time where both FETs are off, the back-diode of the low-side power MOSFET conducts the inductor current. Having the low-side FET turn-on keeps the power dissipation low, and allows safe charging at high currents. During synchronous mode, the inductor current always flows, and the device operates in Continuous Conduction Mode (CCM), creating a fixed two-pole system. During non-synchronous operation, after the high-side N-channel power MOSFET turns off, and after the break-before-make dead-time, the low-side N-channel power MOSFET will turn-on for around 80ns, then the low-side power MOSFET will turn-off and stay off until the beginning of the next cycle, where the high-side power MOSFET is turned on again. The low-side MOSFET 80-ns on-time is required to ensure that the bootstrap capacitor is always recharged and able to keep the high-side power MOSFET on during the next cycle. This is important for battery chargers, where unlike regular dc-dc converters, there is a battery load that maintains a voltage and can both source and sink current. The 80-ns low-side pulse pulls the PH node (connection between high and low-side MOSFET) down, allowing the bootstrap capacitor to recharge up to the REGN LDO value. After the 80 ns, the low-side MOSFET is kept off to prevent negative inductor current from occurring. The inductor current is blocked by the turned-off low-side MOSFET, and the inductor current becomes discontinuous. This mode is called Discontinuous Conduction Mode (DCM). During the DCM mode, the loop response automatically changes and has a single-pole system at which the pole is proportional to the load current, because the converter does not sink current, and only the load provides a current sink. This means that at very low currents, the loop response is slower, because there is less sinking current available to discharge the output voltage. At very low currents during non-synchronous operation, there may be a small amount of negative inductor current during the 80-ns recharge pulse. The charge should be low enough to be absorbed by the input capacitance. Whenever BTST – PH < 4 V, the 80-ns recharge pulse occurs on LODRV, the high-side MOSFET does not turn on, and the low-side MOSFET does not turn on (only 80-ns recharge pulse). In the bq24750, VISYNSET=ISYN×RSR is internally set to 13mV as the charge-current threshold at which the charger changes from non-synchronous to synchronous operation. The low-side driver turns on for only 80 ns to charge the boost capacitor. This is important to prevent negative inductor current, which may cause a boost effect in which the input voltage increases as power is transferred from the battery to the input capacitors. This boost effect can lead to excessive voltage on the PVCC node and potential system damage. The inductor ripple current is given by:Equation 4 IRIPPLE_MAX £ ISYN £ IRIPPLE_ MAX 2 and V 1 1 VIN ´ (1- D )´ D ´ (VIN - VBAT )´ BAT ´ VIN fs fs = IRIPPLE = L L (4) Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 21 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com where: VIN = adapter voltage VBAT = BAT voltage fS = switching frequency L = output inductor D = duty-cycle IRIPPLE_MAX Happens when the duty-cycle(D) is mostly near to 0.5 at given VIN, fs, and L. The ISYNSET comparator, or charge undercurrent comparator, compares the voltage between SRP-SRN and internal threshold. The threshold is set to 13 mV on the falling edge, with an 8-mV hysteresis on the rising edge with a 10% variation. High Accuracy IADAPT Using Current Sense Amplifier (CSA) An industry-standard, high-accuracy current-sense amplifier (CSA) allows a host processor or discrete logic to monitor the input current through the analog voltage output of the IADAPT pin. The CSA amplifies the input sensed voltage of ACP – ACN by 20× through the IADAPT pin. The IADAPT output is a voltage source 20× the input differential voltage. When PVCC is above 5V and ACDET is above 0.6V, IADAPT no longer stays at ground, but becomes active. If the designer needs to lower the voltage, a resistor divider from IOUT to AGND can be used, while still achieving accuracy over temperature as the resistors can be matched for their thermal coefficients. A 200-pF capacitor connected on the output is recommended for decoupling high-frequency noise. An additional RC filter is optional, after the maximum 200-pF capacitor, if additional filtering is desired. Note that adding filtering also adds additional response delay. Input Overvoltage Protection (ACOV) ACOV provides protection to prevent system damage due to high input voltage. The controller enters ACOV when ACDET > 3.1 V. Charge is disabled, the adapter is disconnected from the system by turning off ACDRV, and the battery is connected to the system by turning on BATDRV. ACOV is not latched—normal operation resumes when the ACDET voltage returns below 3.1 V. ACOV threshold is 130% of the adapter-detect threshold. Input Undervoltage Lockout (UVLO) The system must have 5 V minimum of PVCC voltage for proper operation. This PVCC voltage can come from either the input adapter or the battery, using a diode-OR input. When the PVCC voltage is below 5 V, the bias circuits REGN, VREF, and the gate drive bias to ACFET and BATFET stay inactive, even with ACDET above 0.6 V. NOTE: The bq24750 will not allow ACDRV to turn on in the unique condition that ACP<3V and PVCC>UVLO. In this condition, the break-before-make protection latch gets stuck in a state that it thinks the BATDRV is ON, and does not allow the ACDRV to turn on. Battery Overvoltage Protection The converter stops switching when BAT voltage goes above 104% of the regulation voltage. The converter will not allow the high-side FET to turn on until the BAT voltage goes below 102% of the regulation voltage. This allows one-cycle response to an overvoltage condition, such as when the load is removed or the battery is disconnected. Charge Overcurrent Protection The charger has a secondary overcurrent protection feature. It monitors the charge current, and prevents the current from exceeding 145% of regulated charge current. The high-side gate drive turns off when the overcurrent is detected, and automatically resumes when the current falls below the overcurrent threshold. 22 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Thermal Shutdown Protection The QFN package has low thermal impedance, providing good thermal conduction from the silicon to the ambient, to keep junction temperatures low. As an added level of protection, the charger converter turns off and self-protects when the junction temperature exceeds the TSHUT threshold of 155°C. The charger stays off until the junction temperature falls below 135°C. Status Register (ACGOOD, DPMDET Pins) Two status outputs are available, and both require external pullup resistors to pull the pins to the system digital rail for a high level. ACGOOD goes low when ACDET is above 2.4 V and the 700-ms delay time is over. It indicates that the adapter voltage is high enough. The DPMDET open-drain output goes low (after a 10-ms delay) when the DPM loop is active to reduce the battery charge current. Temperature Qualification The controller continuously monitors the battery temperature by measuring the voltage between the TS pin and AGND. In a typical application, a negative-temperature-coefficient thermistor (NTC) and an external voltage divider develop this voltage. The controller compares this voltage against its internal thresholds to determine if charging is allowed. To initiate a charge cycle, the battery temperature must be within the VLTF to VHTF thresholds. If the battery temperature is outside of this range, the controller suspends charging and waits until the battery temperature is within the VLTF to VHTF range. During the charge cycle, the battery temperature must be within the VLTF to VTCO thresholds. If the battery temperature is outside this range, the controller suspends charging and waits until the battery temperature is within the VLTF to VHTF range. The controller suspends charging by turning off the PWM charge FETs. The VTSDET voltage threshold is used to detect whether a battery is connected. Figure 32 summarizes the operation. VREF VREF CHARGE SUSPENDED CHARGE SUSPENDED VLTF VLTF-HYS VLTF VLTF-HYS TEMPERATURE RANGE TO INITIATE CHARGE TEMPERATURE RANGE DURING A CHARGE CYCLE VHTF VTCO CHARGE SUSPENDED CHARGE SUSPENDED AGND AGND Figure 32. TS, Thermistor Sense Thresholds Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 23 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com Assuming a 103AT NTC thermistor on the battery pack, as shown in Figure 33, the value RT1 and RT2 can be determined by using the following equations: VVREF -1 VLTF RT1 = 1 1 + RT2 RTHCOLD and æ 1 1 ö VVREF ´ RTHCOLD ´ RTHHOT ´ ç ÷ VLTF VHTF ø è RT2 = æV ö æV ö RTHHOT ´ ç VREF - 1÷ - RTHCOLD ´ ç VREF - 1÷ V V è HTF ø è LTF ø (5) VREF RT1 bq24750 TS RT2 RTH 103AT Figure 33. TS Resistor Network 24 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Input Overpower Protection (ACOP) The ACOC/ACOP circuit provides a reliable layer of safety protection that can complement other safety measues. ACOC/ACOP helps to protect from input current surge due to various conditions including: • Adapter insertion and system selector connecting adapter to system where system capacitors need to charge • Learn mode exit when adapter is reconnected to the system; system load over-current surge • System shorted to ground • Battery shorted to ground • Phase shorted to ground • High-side FET shorted from drain to source (SYSTEM shorted to PH) • BATFET shorted from drain to source (SYSTEM shorted to BAT) Several examples of the circuit protecting from these fault conditions are shown below. For designs using the selector functions, an input overcurrent (ACOC) and input over-power protection function (ACOP) is provided. The threshold is set by an external capacitor from the ACOP pin to AGND. After the adapter is detected (ACDET pin > 2.4V), there is a 700-ms delay before ACGOOD is asserted low, and Q3 (BATFET) is turned-off. Then Q1/Q2 (ACFET) are turned on by the ACDRV pin. When Q1/Q2 (ACFET) are turned on, the ACFET allows operation in linear-regulation mode to limit the maximum input current, ACOC, to a safe level. The ACOC current limit is 1.5 times the programmed DPM input current limit set by the ratio of SRSET/VDAC. The maximum allowable current limit is 100 mV across ACP – ACN (10 A for a 10-mΩ sense resistor). The first 2 ms after the ACDRV signal begins to turn on, ACOC may limit the current; but the controller is not allowed to latch off in order to allow a reasonable time for the sytem voltage to rise. After 2 ms, ACOP is enabled. ACOP allows the ACFET to latch off before the ACFET can be damaged by excessive thermal dissipation. The controller only latches if the ACOP pin voltage exceeds 2 V with respect to AGND. In ACOP, a current source begins to charge the ACOP capacitor when the input current is being limited by ACOC. This current source is proportional to the voltage across the source-drain of the ACFET (VPVCC-ACP) by an 18-µA/V ratio. This dependency allows faster capacitor charging if the voltage is larger (more power dissipation). It allows the time to be programmed by the ACOP capacitor selected. If the controller is not limiting current, a fixed 5-µA sink current into the ACOP pin to discharge the ACOP capacitor. This charge and discharge effect depends on whether there is a current-limit condition, and has a memory effect that averages the power over time, protecting the system from potentially hazardous repetitive faults. Whenever the ACOP threshold is exceeded, the charge is disabled and the adapter is disconnected from the system to protect the ACFET and the whole system. If the ACFET is latched off, the BATFET is turned on to connect the battery to the system. The capacitor provides a predictable time to limit the power dissipation of the ACFET. Since the input current is constant at the ACOC current limit, the designer can calculate the power dissipation on the ACFET. The ACOC current Limit threshold is equal to Power = Id × Vsd = IACOC _ LIM × V(PVCC - ACP) . The time it takes to charge to 2V can be calculated from C C ACOP × 2V × DVACOP Dt = ACOP = i ACOP 18mA/V × V(PVCC - ACP) (6) An ACOP fault latch off can only be cleared by bringing the ACDET pin voltage below 2.4 V, then above 2.4 V (i.e. remove adapter and reinsert), or by reducing the PVCC voltage below the UVLO threshold and raising it. Conditions for ACOP Latch Off: 702ms after ACDET (adapter detected), and a. ACOP voltage > 2V. The ACOP pin charges the ceramic capacitor when in an ACOC current-limit condition. The ACOP pin discharges the capacitor when not in ACOC current-limit. b. ACOP protects from a single-pulse ACOC condition depending on duration and source-drain voltage of ACFET. Larger voltage across ACFET creates more power dissipation so latch-off protection occurs faster, by increasing the current source out of ACOP pin. c. Memory effect (capacitor charging and discharging) allows protection from repititive ACOC conditions, depending on duration and frequency. (Figure 35) d. In short conditions when the system is shorted to ground (ACN < 2.4 V) Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 25 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com In all cases, after 700ms delay, have input overcurrent protection, ACOC, by linearly limiting input current. Threshold is equal to the lower of Idpm*1.5, or 10A. ACOC, No Latch-off ACOC, with ACOP Latch-off, 700ms delay after ACDET, before allow ACDRV to turn-on After Latch-Off, Latch can only clear by: Latch-off time accumulates only when in current limit regulation, ACOC. The time before latch-off is programmable with Cacop, and is inversely proportional to source-drain voltage of ACFET (power). Cacop charge/discharge per time also provides memory for power averaging over time. 1) bringing ACDET below 2.4V, then above 2. 4V; or 2) bringing PVCC below UVLO, then above UVLO. 700ms 2ms 8ms Allow Charge to Turn-on Vin Vadapter ACDET 0V ACGOOD BATDRV ACDRV Vadapter Vsystem Vbattery Ilim = 1.5xIdpm (100 mV max Across ACP_ACN) Input Current Allow Charge Charge Current V(ACOP) A. ACFET overpower protection; initial current limit allows safe soft-start without system voltage droop. Figure 34. ACOC Protection During Adapter Insertion 26 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 Ilim = 1.5xIdpm Iin ACOC_REG V(PVCC-ACP) LATCH-OFF Iacop_pin LATCH-OFF 2V Memory Effect Averages Power V(ACOP) ACDRV_ON ON OFF LATCH-OFF Figure 35. ACOC Protection and ACOP Latch Off with Memory Effect Example Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 27 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com RAC 0.01 W ADAPTER+ ADAPTER– R10 2W P P Q1 (ACFET) C1 SI4435 2.2 µF Q2 (ACFET) SI4435 C2 0.1 µF C3 0.1 µF ACSET ACDRV_ON ACOC ERROR AMPLIFIER and DRIVER ACDRV Regulation Reference IDPM_PRG Lowest of 1.5xIDPM_PRG or (100 mV_max) 10 A (100 mV) – + ACOCREG = REGULATING ACN – IIN Differential Amp CSA V(ACP-ACN) + ACP IDPM Ratiometric Program IADAPT – C8 0.1 µF + PVCC VDS Differential Amp V(PVCC-ACP) Isrc = K*V(PVCC-ACP) K = 18 µA/V REF = 3.3 V ENA_SRC ACOP Cacop 0.47 µF ENA_SNK ACOP Adaptor Over Power Comparator + ACOPDET 1 µs ACOPDETDG Deglitch – 5 µA S Q Rising-Edge Set + 2V and Reset Inputs – R Q ACDET PVCC_UVLO ACDRV and BATDRV breakbefore-make logic ACDET 700 ms Delay Turn-off ACDRV To clear latch fault, user must remove adapter and reinsert, or PVCC brought below then above input UVLO threshold Figure 36. ACOC / ACOP Circuit Functional Block Diagram Table 2. Component List for Typical System Circuit of Figure 1 PART DESIGNATOR QTY DESCRIPTION Q1, Q2, Q3 3 P-channel MOSFET, –30 V, –6 A, SO-8, Vishay-Siliconix, Si4435 Q4, Q5 2 N-channel MOSFET, 30 V, 12.5 A, SO-8, Fairchild, FDS6680A D1 1 Diode, Dual Schottky, 30 V, 200 mA, SOT23, Fairchild, BAT54C RAC, RSR 2 Sense Resistor, 10 mΩ, 1%, 1 W, 2010, Vishay-Dale, WSL2010R0100F L1 1 Inductor, 8.2 µH, 8.5 A, 24.8 mΩ, Vishay-Dale, IHLP5050CE-01 C1 1 Capacitor, Ceramic, 2.2 µF, 25 V, 20%, X5R, 1206, Panasonic, ECJ-3YB1E225M C6, C7, C11, C12 4 Capacitor, Ceramic, 10 µF, 35 V, 20%, X5R, 1206, Panasonic, ECJ-3YB1E106M C4, C10 2 Capacitor, Ceramic, 1 µF, 25 V, 10%, X7R, 2012, TDK, C2012X7R1E105K C2, C3, C8, C9, C13, C14, C15 7 Capacitor, Ceramic, 0.1 µF, 50 V, 10%, X7R, 0805, Kemet, C0805C104K5RACTU C5 1 Capacitor, Ceramic, 100 pF, 25 V, 10%, X7R, 0805, Kemet C16 1 Capacitor, Ceramic, 0.47 µF, 25 V, 10%, X7R, 0805, Kemet R5, R6 2 Resistor, Chip, 10 kΩ, 1/16 W, 5%, 0402 R1 1 Resistor, Chip, 432 kΩ, 1/16 W, 1%, 0402 R2 1 Resistor, Chip, 66.5 kΩ, 1/16 W, 1%, 0402 R3 1 Resistor, Chip, 5.6 kΩ, 1/16 W, 1%, 0402 R4 1 Resistor, Chip, 118 kΩ, 1/16 W, 1%, 0402 R10 1 Resistor, Chip, 2 Ω, 1 W, 5%, 2010 28 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 APPLICATION INFORMATION Input Capacitance Calculation During the adapter hot plug-in, the ACDRV has not been enabled. The AC switch is off and the simplified equivalent circuit of the input is shown in Figure 37. IIN Ri Vi VIN Li Rc Ci Vc Figure 37. Simplified Equivalent Circuit During Adapter Insertion The voltage on the input capacitor(s) is given by: VIN (t ) = IIN (t )´ R C + VCi(t ) = Vi e Ri t 2L i é R i -R C ù sin w t + cos w t ú ê ë wLi û (7) in which, R t = Ri + R C w = VCi (t) = Vi - Vie Rt t 2Li 1 L i Ci - æ Rt ö ç ÷ è 2Li ø 2 IIN (t) = Vi Ri t 2Li sin w t e wL i (8) æ Rt ö sin w t + cosw t ÷ ç è 2w L i ø (9) The damping conditions is: Ri + R C > 2 L C (10) Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 29 bq24750 SLUS735D – DECEMBER 2006 – REVISED MARCH 2009............................................................................................................................................... www.ti.com Figure 38 (a) demonstrates a higher Ci helps dampen the voltage spike. Figure 38 (b) demonstrates the effect of the input stray inductance Li upon the input voltage spike. Figure 38 (c) shows how increased resistance helps to suppress the input voltage spike. 35 35 Ci = 20 mF Ci = 40 mF 30 Input Capacitor Voltage - V Input Capacitor Voltage - V Li = 5 mH Ri = 0.21 W Li = 9.3 mH 30 25 20 15 10 5 0 Li = 12 mH Ri = 0.15 W Ci = 40 mF 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 3.5 Time - ms (a) Vc with various Ci values 4 0 5 4.5 0 0.5 1 1.5 2 2.5 3 3.5 Time - ms (b) Vc with various Li values 4 4.5 5 35 Ri = 0.15 W Li = 9.3 mH Ci = 40 mF Input Capacitor Voltage - V 30 Ri = 0.5 W 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 Time - ms 3.5 4 4.5 5 (c) Vc with various Ri values Figure 38. Parametric Study Of The Input Voltage As shown in Figure 38, minimizing the input stray inductance, increasing the input capacitance, and adding resistance (including using higher ESR capacitors) helps suppress the input voltage spike. However, a user often cannot control input stray inductance and increasing capacitance can increase costs. Therefore, the most efficient and cost-effective approach is to add an external resistor. Figure 39 depicts the recommended input filter design. The measured input voltage and current waveforms are shown in Figure 40. The input voltage spike has been well damped by adding a 2Ω resistor, while keeping the capacitance low. VIN 2W (0.5 W, 1210 anti-surge) 2.2 mF (25 V, 1210) VPVCC Rext C1 C2 0.1 mF (50 V, 0805, very close to PVCC) Figure 39. Recommended Input Filter Design 30 Figure 40. Adapter DC Side Hot Plug-in Test Waveforms Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 bq24750 www.ti.com............................................................................................................................................... SLUS735D – DECEMBER 2006 – REVISED MARCH 2009 PCB Layout Design Guideline 1. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers. 2. The control stage and the power stage should be routed separately. At each layer, the signal ground and the power ground are connected only at the power pad. 3. The AC current-sense resistor must be connected to ACP (pin 3) and ACN (pin 2) with a Kelvin contact. The area of this loop must be minimized. An additional 0.1µF decoupling capacitor for ACN is required to further reduce noise. The decoupling capacitors for these pins should be placed as close to the IC as possible. 4. The charge-current sense resistor must be connected to SRP (pin 19), SRN (pin 18) with a Kelvin contact. The area of this loop must be minimized. An additional 0.1µF decoupling capacitor for SRN is required to further reduce noise. The decoupling capacitors for these pins should be placed as close to the IC as possible. 5. Decoupling capacitors for PVCC (pin 28), VREF (pin 10), REGN (pin 24) should be placed underneath the IC (on the bottom layer) with the interconnections to the IC as short as possible. 6. Decoupling capacitors for BAT (pin 17), IADAPT (pin 15) must be placed close to the corresponding IC pins with the interconnections to the IC as short as possible. 7. Decoupling capacitor CX for the charger input must be placed very close to the Q4 drain and Q5 source. Figure 41 shows the recommended component placement with trace and via locations. For the QFN information, please refer to the following links: SCBA017 and SLUA271 (a) Top Layer (b) Bottom Layer Figure 41. Layout Example Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s) :bq24750 31 PACKAGE OPTION ADDENDUM www.ti.com 10-Jun-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ24750RHDR NRND VQFN RHD 28 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 BQ 24750 BQ24750RHDT NRND VQFN RHD 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 BQ 24750 BQ24750RHDTG4 NRND VQFN RHD 28 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 BQ 24750 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 10-Jun-2014 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ24750RHDR VQFN RHD 28 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 BQ24750RHDT VQFN RHD 28 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ24750RHDR VQFN RHD 28 3000 367.0 367.0 35.0 BQ24750RHDT VQFN RHD 28 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2014, Texas Instruments Incorporated