ACE5801 P-Channel Power MOSFET Description The ACE5801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. . This device is suitable for use as a load switching application and a wide variety of other applications. Features • • Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Applications • • • PWM application Load switch Battery charge in cellular handset Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Drain Current-Continuous ID -16 Drain Current-Pulsed (note 1) IDM -65 Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD 2.5 18 Thermal Resistance from Junction to Ambient (note 4) RθJA 50 Thermal Resistance from Junction to case (note 4) RθJC 6.9 Junction Temperature TJ 150 Storage Temperature TSTG -55~150 A W ℃/W ℃ Packaging Type DFNWB2*2-6L VER 1.2 1 ACE5801 P-Channel Power MOSFET Ordering information ACE5801 XX + H Halogen - free Pb - free LN : DFNWB2*2-6L Electrical Characteristics (TA=25 OC unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -12 V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V -1 uA Gate-Body Leakage Current IGSS VGS=±8V, VDS=0V ±100 nA On characteristics (note 5) VGS=-4.5V, ID=-6.7A 21 VGS=-2.5V, ID=-6.2A 27 Drain-Source On-state Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-10V, ID=-6.7A -0.4 -0.7 mΩ -1 40 V S Dynamic characteristics (note 6) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2700 VDS=-10V, VGS=0V f=1 MHz 680 pF 590 VDS=-6V, VGS=-8V, ID=-10A VDS=-6V, VGS=-4.5V, ID=-10A 60 100 35 48 nC -16 A -1.2 V 5 10 Drain-source diode characteristics Diode Forward Current (note 5) IS Diode Forward Voltage (note 4) VSD IS=-1.6A,VGS=0V -0.5 Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. This test is performed with infinite heat sink at Tc=25℃. 4. Surface mounted on FR4 board, t≤10S. 5. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%. 6. Guaranteed by design, not subject to production testing. VER 1.2 2 ACE5801 P-Channel Power MOSFET Typical Performance Characteristics VER 1.2 3 ACE5801 P-Channel Power MOSFET Packing Information DFNWB2*2-6L VER 1.2 4 ACE5801 P-Channel Power MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5