DG2519E www.vishay.com Vishay Siliconix High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION FEATURES The DG2519E is monolithic CMOS dual single-pole / double-throw (SPDT) analog switches. It is specifically designed for low-voltage, high bandwidth applications. • • • • • The DG2519E on-resistance, matching and flatness are guaranteed over the entire analog voltage range. Wide dynamic performance is achieved with typical at -61 dB for both cross-talk and off-isolation at 1 MHz. Both SPDT’s operate with independent control logic, conduct equally well in both directions and block signals up to the power supply level when off. Break-before-make is guaranteed. With fast switching speeds, low on-resistance, high bandwidth, and low charge injection, the DG2519E are ideally suited for audio and video switching with high linearity. Built on Vishay Siliconix’s low voltage CMOS technology, the DG2519E contain an epitaxial layer which prevents latch-up Single supply (1.8 V to 5.5 V) Low on-resistance - RON: 2.5 Crosstalk and off isolation: -61 dB at 1 MHz MSOP-10 and DFN-10 package Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • • • • • Reduced power consumption High accuracy Reduce board space Low-voltage logic compatible High bandwidth APPLICATIONS • • • • • • Cellular phones Speaker headset switching Audio and video signal routing PCMCIA cards Low-voltage data acquisition ATE FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE IN NO1 1 2 LOGIC EN NC1 and NC2 NO1 and NO2 0 1 ON OFF 9 NC1 1 1 OFF ON 0 0 OFF OFF 1 0 OFF OFF 10 COM1 GND 3 8 V+ NO2 4 7 NC2 EN 5 6 COM2 ORDERING INFORMATION TEMP. RANGE Top view -40 °C to +85 °C PACKAGE PART NUMBER MSOP-10 DG2519EDQ-T1-GE3 DFN-10 DG2519EDN-T1-GE4 ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT Reference V+ to GND -0.3 to +6 IN, COM, NC, NO a -0.3 to (V+ + 0.3) Continuous current (any terminal) ± 50 Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200 Storage temperature (D suffix) -65 to +150 MSOP-10 c 320 DFN-10 d 1191 ESD / HBM EIA / JESD22-A114-A 7.5k ESD / CDM EIA / JESD22-C101-A 1.5k JESD78 300 Power dissipation (packages) b Latch up UNIT V mA °C mW V mA Notes a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 4 mW/°C above 70 °C d. Derate 14.9 mW/°C above 70 °C S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 3 V) PARAMETER SYMBOL TEST CONDITIONS TEMP. OTHERWISE UNLESS SPECIFIED a V+ = 3 V, ± 10 %, VIN/ENL = 0.4 V, VIN/ENH = 1.5 V e LIMITS -40 °C to +85 °C MIN. c UNIT TYP. b MAX. c Analog Switch Analog signal range d VANALOG V+ = 1.8 V, VNC/NO = 0.4 V / V+, INC/NO = 8 mA Drain-source on-resistance RDS(on) V+ = 2.7 V, VCOM = 0.8 V / 1.8 V, ICOM = 10 mA On-resistance matching On-resistance flatness d, f Off leakage current g RDS(on) Rflat(on) INC/NO(off) COM off leakage current g ICOM(off) Channel-on leakage current g ICOM(on) V+ = 2.7 V, VCOM = 0.8 V / 1.4 V / 1.8 V, ICOM = 10 mA V+ = 3.6 V, VNC/NO = 1 V / 3.2 V, VCOM = 3.2 V / 1 V, VEN = 0 V V+ = 3.3 V, VCOM = VNC/NO = 1 V / 3.2 V Full 0 - V+ Room - 7 11 Full - - 13 Room - 4.6 5.5 Full - - 6.5 Room - 0.02 0.3 0.6 Full - - Room - 0.62 1.1 Full - - 1.5 Room -1 0.01 1 Full -5 - 5 Room -1 0.01 1 Full -5 - 5 Room -1 0.01 1 Full -5 - 5 V nA Digital Control Input current d IINL or IINH Full -1 - 1 Input high voltage d VINH Full 1.5 - - Input low voltage d VINL Full - - 0.4 Digital input capacitance d CIN Room - 3 - Room - 21 45 Full - - 50 Room - 11 35 Full - - 45 Room 3 13 - Full 2 - - μA V pF Dynamic Characteristics Turn-on time tON VNC/NO = 3 V, CL = 35 pf, RL = 300 Turn-off time tOFF Break-before-make time d tBBM Charge injection d QINJ CL = 1 nF, Vgen= 1.5 V, Rgen= 0 Room - -10.2 - pC Bandwidth d BW CL = 5 pF (set up capacitance) Room - 222 - MHz - Off-isolation d Channel-to-channel crosstalk d NO, NC Off capacitance d Channel-on capacitance d OIRR XTALK RL = 50 , CL = 5 pF RL = 50 , CL = 5 pF f = 1 MHz Room - -58 f = 10 MHz Room - -47 - f = 1 MHz Room - -57 - f = 10 MHz CNO(off) CNC(off) CNO(on) V+ = 2.7 V, f = 1 MHz CNC(on) ns dB Room - -47 - Room - 7 - Room - 7 - Room - 24 - Room - 24 - 2.7 - 3.3 V - - 1 μA pF Power Supply Power supply range V+ Power supply current d I+ V+ = 2.7 V, VIN = 0 V or 2.7 V Full Notes a. Room = 25 °C, Full = as determined by the operating suffix b. Typical values are for design aid only, not guaranteed nor subject to production testing c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet d. Guarantee by design, not subjected to production test e. VIN = V+ voltage to perform proper function f. Crosstalk measured between channels g. Guarantee by 5 V testing S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix SPECIFICATIONS (V+ = 5 V) PARAMETER Analog Switch Analog signal ranged Drain-source on-resistance On-resistance matching On-resistance flatness d, f Off leakage current g SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED V+ = 5 V, ± 10 %, VIN/ENL = 0.5 V, VIN/ENH = 2 Ve VANALOG RDS(on) RDS(on) Rflat(on) INC/NO(off) V+ = 4.5 V, VCOM = 0.8 V / 3.5 V; ICOM = 10 mA V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V, ICOM = 10 mA V+ = 5.5 V, VNC/NO = 1 V / 4.5 V, VCOM = 4.5 V / 1 V, VEN = 0 V COM off leakage current g ICOM(off) Channel-on leakage current g ICOM(on) V+ = 5.5 V, VCOM = VNC/NO = 1 V / 4.5 V IPD V+ = 0 V, VCOM = 5.5 V, NC/NO open V+ = 0 V, VNC/NO = 5.5 V, COM, open Power down leakage d Digital Control Input current d Input high voltage d Input low voltage d Digital input capacitance d Dynamic Characteristics IINL or IINH VINH VINL CIN Turn-on time tON Turn-off time tOFF Break-before-make time d tBBM Propagation delay d Charge injection d Bandwidth d tpd QINJ BW Off-isolation d OIRR Channel-to-channel crosstalk d XTALK NO, NC Off capacitance d Channel-On capacitance d Power Supply Power supply range Power supply current d CNO(off) CNC(off) CNO(on) CNC(on) V+ I+ VNC/NO = 3 V, CL = 35 pf, RL = 300 V+ = 5 V, no RL CL = 1 nF, Vgen = 2.5 V, Rgen = 0 CL = 5 pF (set up capacitance) f = 1 MHz RL = 50 , CL = 5 pF f = 10 MHz f = 1 MHz RL = 50 , CL = 5 pF f = 10 MHz V+ = 5 V, f = 1 MHz V+ = 5.5 V, VIN = 0 V or 5.5 V LIMITS -40 °C to +85 °C TEMP. UNIT a MIN. c TYP. b MAX. c Full Room Full Room Full Room Full Room Full Room Full Room Full Full 0 -2 -10 -2 -10 -2 -10 - 2.5 0.01 0.61 0.16 0.20 0.20 0.01 V+ 3.1 4 0.4 0.5 1 1.5 2 10 2 10 2 10 5 μA Full - 0.01 3 mA Full Full Full Room -1 2 - 3 1 0.5 - μA Room Full Room Full Room Full Room Room Room Room Room Room Room Room Room Room Room 3 2 - 14 7 8 325 -14 217 -61 -48 -61 -48 7 7 24 24 40 43 33 35 - Full 4.5 - - 5.5 1 V nA V pF ns ps pC MHz dB pF V μA Notes a. Room = 25 °C, Full = as determined by the operating suffix b. Typical values are for design aid only, not guaranteed nor subject to production testing c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet d. Guarantee by design, not subjected to production test e. VIN = input voltage to perform proper function f. Difference of min and max values g. Guaranteed by 5 V testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title IS = 10 mA 9 16 14 1st line 2nd line 1000 12 V+ = +2.7 V 10 8 V+ = +3 V 6 100 V+ = +4.5 V 4 10000 VIN/EN = V+ 8 2nd line I+ - Supply Current (nA) V+ = +1.8 V 18 2nd line RON - On-Resistance (Ω) 10 10000 7 V+ = +5.5 V 5 4 100 3 2 2 1 V+ = +5 V 0 0 1 2 4 V+ = +2.7 V 0 10 3 1000 6 1st line 2nd line 20 5 10 -40 -20 0 20 40 60 80 VCOM - Analog Voltage (V) 2nd line Temperature (°C) 2nd line RON vs. VCOM and Single Supply Voltage Supply Current vs. Temperature Axis Title 100 Axis Title 10000 7 1000 10000 +85 °C 4 3 100 -40 °C 2 1 10 0.5 V+ = +5 V 1 1.5 2 2.5 0.1 V+ = +2.7 V 0.01 100 0.001 0.00001 3 10 100 1000 10K 100K 1M 10 10M VCOM - Analog Voltage (V) 2nd line VIN/EN Switching Frequency (Hz) 2nd line RON vs. Analog Voltage and Temperature Positive Supply Current vs. Switching Frequency Axis Title Axis Title 35 3 +25 °C 1st line 2nd line 1000 2 100 -40 °C 1 V+ = +4.5 V IS = 10 mA 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 10000 V+ = +3 V, tON 30 1000 25 V+ = +5 V, tON 20 100 V+ = +3 V, tOFF 15 V+ = +5 V, tOFF 10 -50 -25 0 25 50 75 VCOM - Analog Voltage (V) 2nd line Temperature (°C) 2nd line RON vs. Analog Voltage and Temperature Switching Time vs. Temperature S17-0461-Rev. A, 03-Apr-17 1st line 2nd line +85 °C 2nd line tON(EN), tOFF(EN) - Switching Time (ns) 10000 4 2nd line RON - On-Resistance (Ω) 1000 1 0.0001 V+ = +2.7 V IS = 10 mA 0 10 1st line 2nd line 1000 5 1st line 2nd line 2nd line RON - On-Resistance (Ω) +25 °C 2nd line I+ - Supply Current (μA) 100 6 10 100 Document Number: 78595 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 20 10000 1000 10000 ICOM(OFF), VCOM = 1 V, VNC/NO = 4.5 V 1000 12 10 8 6 100 V+ = +5 V 4 0 1000 -1000 ICOM(ON), VCOM/NC/NO = 4.5 V -2000 INC/NO(OFF), VCOM = 4.5 V, VNC/NO = 1 V 100 INC/NO(OFF), VCOM = 1 V, VNC/NO = 4.5 V -3000 ICOM(ON), VCOM/NC/NO = 1 V 2 0 10 -50 -25 0 25 50 75 V+ = +5.5 V -4000 100 -40 -20 10 0 Temperature (°C) 2nd line 60 80 100 Axis Title Axis Title 100 10000 -40 °C to +85 °C 10000 ICOM(OFF), VCOM = 3.2 V, VNC/NO = 1 V 1000 1st line 2nd line VIH = -40 °C 100 VIL = 85 °C 2nd line Leakage Current (pA) 0 -100 ICOM(ON), VCOM/NC/NO = 3.2 V 1000 -200 1st line 2nd line 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 Temperature (°C) 2nd line Leakage Current vs. Temperature Switching Time vs. Temperature 2nd line VT - Switching Threshold (V) 1st line 2nd line V+ = +3 V 14 2nd line Leakage Current (pA) ICOM(OFF), VCOM = 4.5 V, VNC/NO = 1 V 16 1st line 2nd line 2nd line tBBM - Switching Time (ns) 18 -300 INC/NO(OFF), VCOM = 1 V, VNC/NO = 3.2 V 100 ICOM(OFF), VCOM = 1 V, VNC/NO = 3.2 V -400 ICOM(ON), VCOM/NC/NO = 1 V -500 INC/NO(OFF), VCOM = 3.2 V, VNC/NO = 1 V 10 1 2 3 4 5 6 V+ = +3.6 V -600 -40 V+ - Supply Voltage (V) 2nd line -20 10 0 20 40 60 Temperature (°C) 2nd line 80 100 Leakage Current vs. Temperature Switching Threshold vs. Supply Voltage Axis Title -10.0 V+ = 1.8 V -20.0 V+ = 5 V 100 V+ = 3 V Leakage Current (pA) 1000 0 V+ = +5.5 V INC/NO(off) 1000 10.0 1st line 2nd line 2nd line QINJ - Charge Injection (pC) 2000 10000 20.0 ICOM(off) 0 -1000 ICOM(on) -2000 -3000 -30.0 -40.0 10 0 1 2 3 4 5 6 -4000 0 1 2 3 4 5 VS - Analog Voltage (V) 2nd line VD - Analog Voltage (V) Charge Injection vs. Source Voltage Leakage Current vs. Analog Voltage S17-0461-Rev. A, 03-Apr-17 6 Document Number: 78595 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10 Axis Title Loss 0 1000 XTALK 1000 1st line 2nd line -20 -30 -40 100 OIRR -50 100 V+ = 5 V 1000 1st line 2nd line -10 2nd line I+ - Supply Current (μA) 2nd line Loss, OIRR, XTALK (dB) 10000 10 000 10000 10 1 V+ = 2.7 V 100 0.1 0.01 -60 V+ = +5 V -70 100K 0.001 10 1M 10M 100M 1G 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Frequency (Hz) 2nd line VIN/EN (V) 2nd line Loss, OIRR, XTALK vs. Frequency Positive Supply Current vs. Logic Voltage TEST CIRCUITS V+ Logic Input V+ NO or NC Switch Input 50 % tr < 5 ns tf < 5 ns VINL Switch Output COM VINH VOUT 0.9 x V OUT IN Logic Input RL 50 GND Switch Output CL 35 pF 0V tOFF tON 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT = V COM RL R L + R ON Fig. 1 - Switching Time V+ Logic Input V+ VNO VNC COM NO VO VINH tr < 5 ns tf < 5 ns VINL NC RL 50 IN CL 35 pF GND VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make Interval S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2519E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ VOUT V+ Rgen VOUT COM NC or NO VOUT + IN IN Vgen CL = 1 nF VIN = 0 - V+ On Off On GND Q = VOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection V+ V+ 10 nF 10 nF V+ V+ NC or NO COM 0 V, 2.4 V IN Meter COM COM IN 0 V, 2.4 V RL NC or NO GND GND Analyzer HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM Off Isolation = 20 log V NO/ NC Fig. 5 - Channel Off/On Capacitance Fig. 4 - Off-Isolation V+ V+ NC, NO, Sx COM IN GND A 5.5 V + - V+ 5.5 V + - A V+ NC, NO, Sx COM IN GND Fig. 6 - Source / Drain Power Down Leakage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78595. S17-0461-Rev. A, 03-Apr-17 Document Number: 78595 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places C ς A2 Seating Plane 0.05 S E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) NOTES: 1. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. N = 10L Die thickness allowable is 0.203"0.0127. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71245 12-Jul-02 MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.17 - 0.27 8 0.17 0.20 0.23 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.50 BSC 2.00 BSC 0.40 0.55 10 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 www.vishay.com 1 Package Information Vishay Siliconix DFN-10 LEAD (3 X 3) D e Terminal Tip 3 D/2 3 NXb 0.10 M C A B 5 0.15 C E2 NXL Exposed Pad Index Area D/2 E/2 D2 0.15 5 BOTTOM VIEW // 0.10 E/2 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 2x Index Area D/2 E/2 C E 2x TOP VIEW C A 4 NX 0.08 SEATING PLANE C A1 A3 SIDE VIEW MILLIMETERS NOTES: 1. All dimensions are in millimeters and inches. 2. N is the total number of terminals. 3. 4. 5. Dimension b applies to metallized terminal and is measured between 0.15 and 0.30 mm from terminal tip. Coplanarity applies to the exposed heat sink slug as well as the terminal. The pin #1 identifier may be either a mold or marked feature, it must be located within the zone iindicated. INCHES Dim Min Nom Max Min Nom Max A 0.80 0.90 1.00 0.031 0.035 0.039 A1 0.00 0.02 0.05 0.000 0.001 0.002 A3 b D D2 E E2 e L 0.20 BSC 0.18 0.23 0.008 BSC 0.30 0.007 2.48 0.087 3.00 BSC 2.20 2.38 1.64 0.40 0.094 0.098 0.118 BSC 1.74 0.059 0.50 BSC 0.30 0.012 0.118 BSC 3.00 BSC 1.49 0.009 0.065 0.069 0.020 BSC 0.50 0.012 0.016 0.020 *Use millimeters as the primary measurement. ECN: S-42134—Rev. A, 29-Nov-04 DWG: 5943 Document Number: 73181 29-Nov-04 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000