AP2306AGN
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
D
▼ Surface mount package
BVDSS
30V
RDS(ON)
35mΩ
ID
5A
S
SOT-23
Description
G
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
± 12
V
3
5
A
3
4
A
20
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200105041
AP2306AGN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
30
mΩ
VGS=4.5V, ID=5A
-
-
35
mΩ
VGS=2.5V, ID=2.6A
-
-
50
mΩ
VGS=1.8V, ID=1.0A
-
-
90
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=5V, ID=5A
-
13
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=5A
-
8.5
15
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.2
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=3Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
660
1050
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
IS=5A, VGS=0V,
-
14
-
ns
dI/dt=100A/µs
-
7
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2306AGN
50
80
5.0V
T A =25 o C
o
40
5.0V
ID , Drain Current (A)
60
ID , Drain Current (A)
T A =150 C
4.5V
4.0V
V G =2.5V
40
20
4.5V
30
4.0V
20
V G =2.5V
10
0
0
0
1
2
3
4
5
6
7
0
1
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I D =5.3A
I D =5.3A
1.6
T A =25 o C
Normalized R DS(ON)
V G =4.5V
60
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
40
1.4
1.2
1.0
0.8
0.6
20
1
3
5
7
9
-50
11
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
1.4
1.2
T j =150 o C
T j =25 o C
VGS(th)(V)
IS (A)
1
1
0.8
0.1
0.6
0.4
0.01
0.2
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2306AGN
f=1.0MHz
10000
14
I D =5A
V DS =16V
10
1000
Ciss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
Coss
100
4
Crss
2
10
0
0
5
10
15
20
25
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q