BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 3.1 32 120 13.5 48 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: u Output power = 120 W u Power gain = 13.5 dB u Efficiency = 48 % n Easy power control n Integrated ESD protection n High flexibility with respect to pulse formats n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2.7 GHz to 3.1 GHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 1.3 Applications n S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2731-120 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLS6G2731S-120 (SOT502B) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLS6G2731-120 Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads BLS6G2731S-120 - Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 33 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 2 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Zth(j-mb) transient thermal impedance from junction to mounting base Tcase = 85 °C; PL = 120 W Unit tp = 100 µs; δ = 10 % 0.23 K/W tp = 200 µs; δ = 10 % 0.28 K/W tp = 300 µs; δ = 10 % 0.32 K/W tp = 100 µs; δ = 20 % 0.33 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA Min Typ Max Unit 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 27 33 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 9 A 8.1 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.085 0.135 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 100 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter PL output power VCC supply voltage Gp Min Typ Max Unit - 120 - W PL = 120 W - - 32 V power gain PL = 120 W 12 13.5 - dB RLin input return loss PL = 120 W - 7 - dB PL(1dB) output power at 1 dB gain compression - 130 - W ηD drain efficiency PL = 120 W 40 48 - % Pdroop(pulse) pulse droop power PL = 120 W - 0 0.5 dB tr rise time PL = 120 W - 20 50 ns tf fall time PL = 120 W - 6 50 ns BLS6G2731-120_6G2731S-120_1 Product data sheet Conditions © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 3 of 12 NXP Semiconductors BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.7 3.4 − j7.2 4.6 − j4.4 2.8 3.8 − j5.9 3.8 − j4.6 2.9 4.7 − j4.8 3.0 − j4.6 3.0 6.3 − j4.1 2.3 − j4.3 3.1 8.8 − j4.9 1.8 − j3.9 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 100 µs; δ = 10 %. BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 4 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 7.2 Graphs 001aaj091 15 Gp (dB) 001aaj092 15 Gp (dB) 13 13 (1) (3) (2) (1) (3) (2) 11 11 9 9 7 7 0 40 80 120 160 0 40 80 120 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 2. Power gain as a function of load power; typical values 001aaj093 60 Fig 3. Power gain as a function of load power; typical values 001aaj094 60 (1) (1) ηD (%) 160 PL (W) ηD (%) (2) (2) 40 40 (3) (3) 20 20 0 0 0 40 80 120 160 0 40 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. 160 VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 5. Drain efficiency as a function of load power; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet 120 PL (W) (1) f = 2.7 GHz Fig 4. Drain efficiency as a function of load power; typical values 80 © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 5 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 001aaj095 160 001aaj096 160 PL (W) PL (W) 120 120 80 80 (1) (3) (2) 40 (1) (3) (2) 40 0 0 0 4 8 12 0 4 8 Pi (W) VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. (1) f = 2.7 GHz (1) f = 2.7 GHz (2) f = 2.9 GHz (2) f = 2.9 GHz (3) f = 3.1 GHz (3) f = 3.1 GHz Fig 6. Load power as a function of input power; typical values 001aaj097 15 Gp (dB) Gp 13 ηD 11 Fig 7. Load power as a function of input power; typical values 60 ηD (%) 50 2.75 2.85 2.95 001aaj098 15 Gp (dB) Gp 13 30 3.05 3.15 f (GHz) PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 8. Power gain and drain efficiency as function of frequency; typical values ηD (%) 50 11 40 9 2.65 2.75 2.85 2.95 30 3.05 3.15 f (GHz) PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 9. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet 60 ηD 40 9 2.65 12 Pi (W) © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 6 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 8. Test information C3 C13 C8 C7 C5 C9 C6 C11 C12 C4 C10 R1 C1 C2 Rev3 001aaj099 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components See Figure 10. Component Description Value C1, C2 multilayer ceramic chip capacitor 24 pF C3 multilayer ceramic chip capacitor 47 µF; 20 V C4, C6, C9, C10 multilayer ceramic chip capacitor 33 pF ATC 100A or equivalent C5, C11 multilayer ceramic chip capacitor 1 nF ATC 100A or equivalent C7, C8 multilayer ceramic chip capacitor 100 pF ATC 100B or equivalent C12 electrolytic capacitor C13 multilayer ceramic chip capacitor 10 µF; 35 V R1 SMD resistor ATC 100A or equivalent 47 µF; 63 V 56 Ω BLS6G2731-120_6G2731S-120_1 Product data sheet Remarks SMD 0603 © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 7 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 8 of 12 BLS6G2731-120; BLS6G2731S-120 NXP Semiconductors LDMOS S-band radar power transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 9 of 12 NXP Semiconductors BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G2731-120_6G2731S-120_1 20081114 Product data sheet - - BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 10 of 12 NXP Semiconductors BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLS6G2731-120_6G2731S-120_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 14 November 2008 11 of 12 NXP Semiconductors BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 November 2008 Document identifier: BLS6G2731-120_6G2731S-120_1