TGS BUL128D High voltage fast-switchingnpn power transistor Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
BUL128D
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■
DESCRIPTION
■
■
APPLICATIONS
■
ELECTRONIC BALLASTS FOR FLUORESCENT
LIGHTING
■
FLYBACK AND FORWARD SINGLE
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage
capability. It uses a Cellular Emitter structure
with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
ABSOLUTE MAXIMUM RATINGS
Parameter
ol
Value
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9.0
V
Collector Current
IC
4.0
A
Base Current
IB
2.0
A
Ptot
70
W
Tj
150
o
Tstg
-65~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
C
TO-220AB
C
(Tcase = 25 ℃ unless otherwise specified)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICES
VCE=700V, IE=0
—
—
0.25
mA
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
—
—
0.1
mA
Collector-Emitter Sustaining Voltage
VCEO
IC=100mA, IB=0
400
—
—
V
V
Emitter-Base BreakdownVoltage
(IC=0)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
BVEBO
IE=10mA
9
—
18
hFE(1)
VCE=5V, IC=2.0A
12
—
32
hFE(2)
VCE=5V, IC=10mA
10
—
—
IC=1.0A,IB=0.2A
—
—
1.0
IC =4.0A, IB=1.0A
—
0.5
—
IC=1.0A,IB=0.2A
—
—
1.2
IC =2.5A,IB=0.5A
—
—
1.3
IC=2.0A IB1=-IB2=0.4A
2.0
—
2.9
VCE(sat)
VBE(sat)
TS
V
V
us
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