AOSMD AO4412 N-channel enhancement mode field effect transistor Datasheet

AO4412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4412 uses advanced trench technology to
provide excellent RDS(ON) and ultra low gate charge for
use has a fast high side switch. The source leads are
separated to allow a Kelvin connection to the source,
which may be used to bypass the source
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.
VDS (V) = 30V
ID = 8.5A
(V GS = 10V)
RDS(ON) < 26mΩ (VGS = 10V)
RDS(ON) < 34mΩ (VGS = 4.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
ID
IDM
TA=70°C
TA=25°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
60
3
W
2.1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
7.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
8.5
TA=25°C
Pulsed Drain Current B
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
On state drain current
ID(ON)
RDS(ON)
gFS
VSD
IS
Conditions
Min
ID=250µA, VGS=0V
30
1
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
Static Drain-Source On-Resistance
tD(off)
tf
trr
Qrr
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
Turn-Off Fall Time
100
nA
1.8
3
V
22
26
28
34
mΩ
1
4
S
V
A
A
TJ=125°C
Output Capacitance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
µA
30
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Units
1
5
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
Max
V
VDS=24V, VGS=0V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Crss
Rg
Typ
0.76
mΩ
590
162
40
0.45
pF
pF
pF
Ω
6.04
1.46
2.56
3.7
nC
nC
nC
ns
3.5
14.9
2.5
26
20
ns
ns
ns
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3V
25
2.5V
20
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
25°C
2V
4
5
VGS=1.5V
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
2
2.5
3
Normalized On-Resistance
1.8
50
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
60
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
1.6
VGS=4.5V
1.4
VGS=10V
1.2
VGS=2.5V
1
0.8
0
5
10
15
20
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
90
1.0E+00
ID=5A
1.0E-01
125°C
IS (A)
70
60
50
50
75
25°C
30
20
125
150
175
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
40
100
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
80
RDS(ON) (mΩ)
1
1.0E-05
1.0E-06
0.0
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=8.5A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
1000
Ciss
800
600
400
1
0
0
1
2
3
4
5
0
6
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
TJ(Max)=150°C
TA=25°C
40
Power (W)
ID (Amps)
20
1ms
10.0
10ms
0.1s
1s
1.0
DC
1
10
100
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
20
0
0.001
0.1
0.1
30
10
10s
ZθJA Normalized Transient
Thermal Resistance
15
50
TJ(Max)=150°C
TA=25°C
100µs
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
Crss
Coss
200
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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