UTC DTA143EL-T92-B Pnp digital transistor (bult-in resistors) Datasheet

UNISONIC TECHNOLOGIES CO.,
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR (BULT-IN
RESISTORS)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
* The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
* Only the on / off conditions need to be set for operation,
making device design easy.
EQUIVALENT CIRCUIT
*Pb-free plating product number:DTA143EL
IN
AE3
R2
PIN CONFIGURATION
PIN NO.
PIN NAME
1
GND
2
OUT
3
IN
GND (+)
IN
TO-92
MARKING
OUT
R1
1
OUT
GND (+)
ORDERING INFORMATION
Order Number
Normal
Lead free
DTA143E-T92-B DTA143EL-T92-B
DTA143E-T92-K DTA143EL-T92-K
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
Package
Packing
TO-92
TO-92
Tape Box
Bulk
1
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCC
VIN
Io
IC(max)
PD
TJ
TSTG
RATINGS
-50
-30~+10
-100
-100
300
150
-40 ~ +150
UNIT
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
VI(off)
Input Voltage
VI(ON)
Output Voltage
VO(ON)
Input Current
II
Output Current
IO(off)
DC Current Gain
GI
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
*Transition frequency of the device
TEST CONDITIONS
VCC= -5V, IO=-100μA
VO= -0.3V, IO= -20mA
IO/II= -10mA / -0.5 mA
VI= -5V
VCC= -50V , VI=0V
VO= -5V, IO= -10mA
VCE= -10 V, IE= 5mA, f=100MHz *
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
-0.5
UNIT
-0.1
-0.3
-1.8
-0.5
V
mA
μA
4.7
1
250
6.11
1.2
kΩ
-3
20
3.29
0.8
V
MHz
2
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS
■
Input voltage vs.output current
(ON characterristics)
Output current vs Input voltage
(OFF characterristics)
-10m
-100
Vo= -0.3V
-20
Output Current, Io (A)
Input Voltage, VI (ON) (V)
-50
-10
Ta=-40℃
25℃
100℃
-5
-2
-1
-200μ
-100μ
-50μ
-20μ
-10μ
-5μ
-500m
-200m
-2μ
-100m
-100μ -200μ
-500 μ-1m
-2m
-5m -10m -20m
-1μ
0
-50m -100 m
Output Current, Io (A)
-1.5
-2.0
-2.5
-3.0
-1
Vo= -5V
-500m
500
Ta=100℃
25℃
-40℃
Io/II=20
Ta=100℃
25℃
-40℃
-200 m
Output Voltage, VO(ON) V
DC Current Gain, GI
-1.0
Output voltage vs. output current
1K
100
-0.5
INPUT VOLTAGE, Vi(off) (V)
DC current gain vs.output current
200
Vcc= -5V
-5m Ta=100℃
25℃
-2m
-40℃
-1m
-500μ
50
20
10
5
100m
-50m
-20m
-10m
-5m
-2m
2
1
-100 μ -200 μ -500μ-1m
-2m
-5m -10m -20m
-50m -100m
Output Current, Io (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-1m
-100μ -200μ -500μ-1m -2m
-5m -10m -20m
-50m -100m
Output Current, Io (A)
3
Ver.A
QW-R201-080.A
DTA143E
PNP EPITAXIAL SILICON TRANSISTOR
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
Ver.A
QW-R201-080.A
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