UMS CHA6005-99F 8-12ghz high power amplifier Datasheet

CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
Linear Gain (dB) & Pout @ ~ 3dBcomp
Main Features
■ High power : 32.5dBm
■ High PAE : 38%
■ Frequency band : 8-12GHz
■ Linear gain : 22dB
■ DC bias: Vd=8Volt@Id=350mA
■ Chip size 3x1.5x0.1mm
34
600
32
550
30
500
28
450
Linear Gain (dB)
Pout @ Pin=14 dBm (3dBcomp)
Idrain @ Pin=14 dBm (3dBcomp)
26
400
24
350
22
300
20
250
18
Idrain @ ~ 3dBcomp (mA)
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
200
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
G
Linear Gain
P1dB
Output Power @ 3dB comp.
PAE
Power Added Efficiency @ 3dB comp.
Ref. : DSCHA60052244 - 31 Aug 12
1/10
Min
8
Typ
Max
12
22
31.5
38
Unit
GHz
dB
dBm
%
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +8V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Operating frequency
8
12
GHz
G
Small signal gain
22
dB
dBS11
Input Return Loss
13
dB
dBS22
Output Return Loss
10
dB
P1dB
Output power @ 1dBcomp
31.5
dBm
P3dB
Output power @ 3dBcomp
32.5
dBm
PAE
Power Added Efficiency @ 3dBcomp
39
%
Id_3dBc
Supply drain current @ 3dBcomp
500
mA
Vd1, 2
Drain supply voltage
8
V
Id
Supply quiescent current
350
mA
Vg
Gate supply voltage
-1
V
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.25 to 0.3nH will improve the matching at the accesses.
Ref. : DSCHA60052244 - 31 Aug 12
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
9.0
V
Id
Drain bias current
550
mA
Vg
Gate bias voltage
-0.6
V
(2)
Pin
Maximum peak input power overdrive
+20
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent damage.
(2)
Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
V1
V1
V2
V2
Parameter
Drain supply voltage
Gaye supply voltage
Ref. : DSCHA60052244 - 31 Aug 12
3/10
Values
8
-1
Unit
V
V
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Typical on-wafer Sij parameters
Tamb.= +25°C, Vd = +8V, Id = 350mA
Freq
(GHz)
S11
(dB)
PhS11
(°)
S12
(dB)
PhS12
(°)
S21
(dB)
PhS21
(°)
S22
(dB)
PhS22
(°)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
-0.13
-0.41
-0.91
-1.58
-2.38
-2.84
-3.31
-3.93
-4.31
-4.83
-5.46
-6.62
-8.19
-9.90
-11.75
-14.25
-22.50
-19.68
-11.97
-9.48
-9.03
-8.28
-7.24
-6.28
-4.14
-2.77
-2.03
-1.55
-1.57
-1.81
-1.92
-2.40
-1.78
-2.71
-4.54
-24.56
-36.99
-49.02
-59.45
-68.02
-74.73
-82.38
-90.68
-97.82
-106.35
-116.08
-124.18
-132.30
-137.14
-139.76
-147.90
-149.89
-36.57
-46.88
-66.85
-76.06
-75.50
-77.36
-73.12
-77.38
-86.29
-97.24
-108.80
-118.06
-127.31
-138.32
-143.30
-155.35
-171.55
169.63
-41.65
-73.73
-69.95
-63.20
-56.66
-63.04
-57.85
-60.34
-60.03
-50.57
-70.50
-55.54
-53.46
-55.00
-57.16
-51.44
-61.08
-61.46
-49.78
-54.09
-45.08
-45.12
-46.53
-50.56
-45.11
-40.75
-43.07
-46.25
-61.73
-40.65
-51.69
-37.13
-53.00
-30.56
-37.57
94.28
-169.07
74.68
3.88
157.15
94.69
-114.80
158.64
24.56
-80.01
131.94
-157.24
-7.29
-29.83
-149.65
49.02
68.48
37.28
-37.51
43.84
-123.49
-167.53
178.36
143.28
-73.10
-41.28
39.37
-168.74
-65.61
56.06
-38.56
17.09
-31.01
-18.51
-134.74
-41.00
-33.87
-23.74
-18.60
-10.90
-6.27
-3.73
-1.35
1.15
4.11
7.63
11.36
15.47
19.90
22.91
23.09
22.44
22.18
22.25
22.31
22.21
22.20
21.59
17.68
10.97
3.20
-4.83
-12.75
-20.85
-28.30
-36.54
-40.98
-52.02
-34.16
-41.04
5.33
124.41
83.31
78.66
48.69
4.33
-33.50
-66.01
-94.43
-123.24
-154.66
170.68
129.40
79.16
14.32
-50.26
-104.62
-154.83
154.10
99.85
43.81
-18.84
-93.01
-177.82
108.88
49.97
-0.77
-42.90
-80.03
-106.29
-126.10
170.77
96.09
104.30
-142.48
-0.14
-0.25
-0.36
-0.45
-0.33
-0.30
-0.46
-0.48
-1.12
-1.84
-2.81
-4.14
-6.12
-7.72
-8.43
-10.58
-12.35
-11.34
-10.95
-11.30
-12.08
-14.05
-19.54
-16.12
-11.80
-10.40
-8.93
-7.39
-6.32
-5.11
-4.24
-5.04
-3.40
-2.95
-3.18
-31.59
-46.43
-60.62
-76.49
-92.84
-108.37
-125.86
-144.00
-163.74
175.57
149.75
117.44
71.13
6.74
-68.64
-110.20
-122.40
-131.10
-144.80
-158.95
-174.53
168.12
110.78
-41.18
-75.70
-90.23
-101.41
-116.10
-123.79
-131.17
-145.42
-150.20
-156.88
-165.99
-173.70
Ref. : DSCHA60052244 - 31 Aug 12
4/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Typical on Test Fixture Measurements
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Linear Gain versus Frequency
25
Linear Gain (dB)
23
21
19
17
15
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Output Power @ 1&3dBcomp versus Frequency
36
Pout @ ~ 1 & 3dBcomp
35
34
33
32
31
30
Pout @ Pin=11 dBm (1dBcomp)
29
Pout @ Pin=14 dBm (3dBcomp)
28
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
5/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Typical Test Fixture Measurements
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Power added efficiency @ 1 & 3dBcomp versus Frequency
44
43
PAE (%) @ ~ 1 & 3dBcomp
42
41
40
39
38
37
36
35
34
PAE (%) @ Pin=11 dBm (1dBcomp)
33
PAE (%) @ Pin=14 dBm (3dBcomp)
32
31
30
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Drain current @ 1 & 3dBcomp versus Frequency
800
IDrain (mA) @ ~ 1 & 3dBcomp
700
600
500
400
300
Idrain @ Pin=14 dBm (3dBcomp)
200
Idrain @ Pin=11 dBm (1dBcomp)
100
0
8
8.5
9
9.5
10
10.5
11
11.5
12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
6/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Mechanical data
Chip thickness: 70µm ±10µm.
Chip size: 3000 x 1500 ±35µm
All dimensions are in micrometers
RF pads (1, 10)
= 122 x 100µm²
DC pads (4, 6, 7, 8, 9)
= 100 x 100µm²
Pin number
1
2, 3, 5,8
4
6
7
8
9
10
Ref. : DSCHA60052244 - 31 Aug 12
Pin name
IN
VG1
VD1
VG2
GND
VD2
OUT
Description
Input RF
Not Connected
Vg1
Vd1
Not Connected
Not Connected
Vd2
Output RF
7/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Recommended assembly plan
25µm wedge bonding is preferred
Note: Equivalent RF Wire Bonding: 0.25nH (typical length of 200µm for a 25µm diameter
wire).
Recommended circuit bonding table
Port
IN
OUT
Connection
External capacitor
Inductance (Lbonding) = 0.3nH
400µm length with a wire diameter of 25 µm
Inductance (Lbonding) = 0.3nH
400µm length with a wire diameter of 25 µm
VG
Inductance  1nH
C1 ~ 120pF, C2 ~ 10nF
VD
Inductance  1nH
C1 ~ 120pF
Ref. : DSCHA60052244 - 31 Aug 12
8/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
DC Schematic
Medium Power Amplifier: 8V, 350mA
Ref. : DSCHA60052244 - 31 Aug 12
9/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6005-99F
8-12GHz High Power Amplifier
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Ordering Information
Chip form:
CHA6005-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA60052244 - 31 Aug 12
10/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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