TEMIC BPW14NB Silicon npn phototransistor Datasheet

BPW14N
Silicon NPN Phototransistor
Description
BPW14N is a high speed silicon NPN epitaxial planar
phototransistor in a standard TO–18 hermetically sealed
metal case.
Its glass lens, featuring a viewing angle of ±12° makes it
insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.
Features
D
D
D
D
D
D
D
D
D
Hermetically sealed case
Lens window
Narrow viewing angle ϕ = ± 10°
Exact central chip alignment
94 8486
Base terminal available
High photo sensitivity
Fast response times
Suitable for visible and near infrared radiation
Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
Test Conditions
x
tp/T = 0.5, tp 10 ms
Tamb 25 °C
x
t
x5s
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
RthJC
Value
32
32
5
50
100
310
150
–55...+150
260
400
150
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
K/W
1 (6)
BPW14N
Basic Characteristics
Tamb = 25_C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Base Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
VCB = 5 V, f = 1 MHz, E=0
IC = 1 mA, IB = 100 mA
VS=5V, IC=5mA, RL=100W
VS=5V, IC=5mA, RL=100W
VS=5V, IC=5mA, RL=100W
Symbol
V(BR)CEO
Min
32
ICEO
CCEO
CCBO
ϕ
lp
l0.5
Typ
Max
Unit
V
1
5.7
6.5
±10
780
520...950
100
nA
pF
pF
deg
nm
nm
V
VCEsat
0.3
ton
toff
fc
ms
ms
3.2
2.7
170
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Collector Light
g Current
2 (6)
Test Conditions
Ee=1mW/cm2,
l=950nm, VCE=5V
Type
BPW14NB
BPW14NC
Symbol
Ica
Ica
Min
1.0
1.7
Typ
1.5
3.0
Max
2.0
Unit
mA
mA
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW14N
Typical Characteristics (Tamb = 25_C unless otherwise specified)
10
Ica – Collector Light Current ( mA )
P tot – Total Power Dissipation ( mW )
800
600
RthJC
400
200
RthJA
0
0
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
94 8329
1
10
Ica – Collector Light Current ( mA )
I CEO – Collector Dark Current ( nA )
10
1
Figure 4. Collector Light Current vs. Irradiance
106
105
VCE=20V
104
103
102
101
100
l=950nm
BPW 14 NB
Ee=1 mW/cm2
0.5 mW/cm2
1
0.2 mW/cm2
0.1 mW/cm2
0.1
20
50
100
150
Tamb – Ambient Temperature ( °C )
94 8330
3.0
VCE=5V
Ee=1mW/cm2
l=950nm
2.0
1.5
1.0
0.5
0
0
50
100
150
Tamb – Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs. Collector Emitter Voltage
C CEO – Collector Emitter Capacitance ( pF )
3.5
2.5
0.1
94 8340
Figure 2. Collector Dark Current vs. Ambient Temperature
I ca rel – Relative Collector Current
0.1
Ee – Irradiance ( mW / cm2 )
94 8339
Figure 1. Total Power Dissipation vs. Ambient Temperature
94 8331
VCE=5V
l=950nm
0.1
0.01
0.01
150
BPW 14 NB
BPW 14 NC
20
16
f=1MHz
12
8
4
0
0.1
94 8335
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
3 (6)
0°
8
VCE=5V
RL=100W
l=950nm
6
S rel – Relative Sensitivity
t on / t off – Turn on / Turn off Time ( m s )
BPW14N
4
ton
2
toff
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
2
4
6
8
10
12
14
IC – Collector Current ( mA )
94 8336
0.4
0.2
0
0.2
0.4
0.6
94 8351
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
1.0
0.8
0.6
0.4
0.2
S(
l ) rel
– Relative Spectral Sensitivity
Figure 7. Turn On/Turn Off Time vs. Collector Current
0.6
0
400
94 8337
600
800
l – Wavelength ( nm )
1000
Figure 8. Relative Spectral Sensitivity vs. Wavelength
4 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPW14N
Dimensions in mm
96 12180
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
5 (6)
BPW14N
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
6 (6)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
Similar pages