BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 250 mAMPS, 200 VOLTS RDS(on) = 6.4 W N−Channel D MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current Continuous (Note 1) Pulsed (Note 2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 Vdc Vpk ID IDM 250 500 PD 350 mW TJ, Tstg −55 to 150 °C G S mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MARKING DIAGRAM 1 2 TO−92 CASE 29−11 STYLE 30 3 A Y WW G A BS107A YWW G G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BS107ARL1G Package Shipping TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 6 1 Publication Order Number: BS107/D BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS − − 30 nAdc Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) V(BR)DSX 200 − − Vdc IGSS − 0.01 10 nAdc Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 − 3.0 Vdc Static Drain−Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) − − − − 28 14 − − 4.5 4.8 6.0 6.4 OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 3) W SMALL−SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 60 − pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss − 6.0 − pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss − 30 − pF gfs 200 400 − mmhos Turn−On Time ton − 6.0 15 ns Turn−Off Time toff − 12 15 ns Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) SWITCHING CHARACTERISTICS 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 W INPUT Vout 23 PULSE GENERATOR 20 dB 50 W ATTENUAT OR Vin 40 pF toff 90% 90% 50 50 ton 10% OUTPUT Vout INVERTED 1M 10 V INPUT Vin 90% 50% PULSE WIDTH 50% 10% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS107A 200 180 VGS = 0 V 160 5.0 VGS = 10 V C, CAPACITANCE (pF) VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 10 250 mA 2.0 1.0 100 mA 0.5 140 120 100 Ciss 80 60 40 0.2 20 0.1 -55 -35 -15 85 105 65 +5.0 25 45 TJ, JUNCTION TEMPERATURE (°C) 125 0 145 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 0.7 0.7 0.6 I D(on) , DRAIN CURRENT (AMPS) 10 V VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 9.0 10 5.0 V 0.5 0.4 0.3 4.0 V 0.2 0.1 3.0 V 0 Figure 5. Transfer Characteristic 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 6. Output Characteristic 0.7 10 V 0.6 0.5 5.0 V 0.4 0.3 4.0 V 0.2 0.1 3.0 V 1.0 50 Figure 4. Capacitance Variation 0.8 ID(on), DRAIN CURRENT (AMPS) ID(on) , DRAIN CURRENT (AMPS) Figure 3. On Voltage versus Temperature 0 Coss Crss 2.0 3.0 4.0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 3 5.0 18 20 BS107A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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