ESAD25M-02N thru ESAD25M-06N ® Pb ESAD25M-02N/ESAD25M-04N/ESAD25M-06N Pb Free Plating Product 16 Ampere Insulated Common Anode Fast Recovery Half Bridge Rectifiers Features Latest GPP technology with super fast recovery time Low forward voltage drop Glass passivated with high current capability Low reverse leakage current High surge current capability Unit : inch (mm) TO-3PF/TO-3P(H)IS .217 (5.5) .130 (3.3) .610 (15.5) .177 (4.5) .378 (9.6) .965 (24.5) Application Automotive Inverters/Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems .177 (4.5) .720 (18.3) Min Mechanical Data Case: TO-3PF isolated package by fully molding Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 6.0 gram approximately .215 (5.47) .138 (3.5) Case Case Case Case Series Connection Doubler Negative Positive Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "S" Suffix "N" Suffix "D" Suffix "C" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL ESAD25M-02N ESAD25M-04N ESAD25M-06N UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified 16.0 IF(AV) o Current TC=100 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 175 VF 0.98 150 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR uA 100 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 90 Operating Junction and Storage Temperature Range V 5.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to + 150 pF o C/W o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ESAD25M-02N thru ESAD25M-06N ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 13 10 8 6 4 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 80 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 ESAD25M-02N ESAD25M-04N 8 ESAD25M-06N 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/