DATA SHEET 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ADFB (128M words × 72 bits, 2 Ranks) Description Features The EBD11ED8ADFB is 128M words × 72 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology. Decoupling capacitors are mounted beside each TSOP on the module board. • 184-pin socket type dual in line memory module (DIMM) PCB height: 31.75mm Lead pitch: 1.27mm • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data transfers per clock cycle • Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver • Data inputs and outputs are synchronized with DQS • 4 internal banks for concurrent operation (Component) • DQS is edge aligned with data for READs; center aligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data referenced to both edges of DQS • Auto precharge option for each burst access • Programmable burst length: 2, 4, 8 • Programmable /CAS latency (CL): 2, 2.5 • Refresh cycles: (8192 refresh cycles /64ms) 7.8µs maximum average periodic refresh interval • 2 variations of refresh Auto refresh Self refresh Document No. E0415E20 (Ver. 2.0) Date Published February 2004 (K) Japan URL: http://www.elpida.com Elpida Memory , Inc. 2003-2004 EBD11ED8ADFB Ordering Information Part number Data rate Mbps (max.) Component JEDEC speed bin (CL-tRCD-tRP) EBD11ED8ADFB-6B 333 DDR333B (2.5-3-3) EBD11ED8ADFB-7A 266 DDR266A (2-3-3) EBD11ED8ADFB-7B 266 DDR266B (2.5-3-3) Contact pad Package Mounted devices EDD5108ADTA-6B 184-pin DIMM Gold EDD5108ADTA-6B, -7A EDD5108ADTA-6B, -7A, -7B Pin Configurations Front side 1 pin 52 pin 53 pin 93 pin 92 pin 144 pin 145 pin 184 pin Back side Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREF 47 DQS8 93 VSS 139 VSS 2 DQ0 48 A0 94 DQ4 140 DM8/DQS17 3 VSS 49 CB2 95 DQ5 141 A10 4 DQ1 50 VSS 96 VDD 142 CB6 5 DQS0 51 CB3 97 DM0/DQS9 143 VDD 6 DQ2 52 BA1 98 DQ6 144 CB7 7 VDD 53 DQ32 99 DQ7 145 VSS 8 DQ3 54 VDD 100 VSS 146 DQ36 9 NC 55 DQ33 101 NC 147 DQ37 10 NC 56 DQS4 102 NC 148 VDD 11 VSS 57 DQ34 103 NC 149 DM4/DQS13 12 DQ8 58 VSS 104 VDD 150 DQ38 13 DQ9 59 BA0 105 DQ12 151 DQ39 14 DQS1 60 DQ35 106 DQ13 152 VSS 15 VDD 61 DQ40 107 DM1/DQS10 153 DQ44 16 CK1 62 VDD 108 VDD 154 /RAS 17 /CK1 63 /WE 109 DQ14 155 DQ45 18 VSS 64 DQ41 110 DQ15 156 VDD 19 DQ10 65 /CAS 111 CKE1 157 /CS0 20 DQ11 66 VSS 112 VDD 158 /CS1 21 CKE0 67 DQS5 113 NC 159 DM5/DQS14 22 VDD 68 DQ42 114 DQ20 160 VSS 23 DQ16 69 DQ43 115 A12 161 DQ46 24 DQ17 70 VDD 116 VSS 162 DQ47 25 DQS2 71 NC 117 DQ21 163 NC 26 VSS 72 DQ48 118 A11 164 VDD 27 A9 73 DQ49 119 DM2/DQS11 165 DQ52 Data Sheet E0415E20 (Ver. 2.0) 2 EBD11ED8ADFB Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 28 DQ18 74 VSS 120 VDD 166 DQ53 29 A7 75 /CK2 121 DQ22 167 NC 30 VDD 76 CK2 122 A8 168 VDD 31 DQ19 77 VDD 123 DQ23 169 DM6/DQS15 32 A5 78 DQS6 124 VSS 170 DQ54 33 DQ24 79 DQ50 125 A6 171 DQ55 34 VSS 80 DQ51 126 DQ28 172 VDD 35 DQ25 81 VSS 127 DQ29 173 NC 36 DQS3 82 VDDID 128 VDD 174 DQ60 37 A4 83 DQ56 129 DM3/DQS12 175 DQ61 38 VDD 84 DQ57 130 A3 176 VSS 39 DQ26 85 VDD 131 DQ30 177 DM7/DQS16 40 DQ27 86 DQS7 132 VSS 178 DQ62 41 A2 87 DQ58 133 DQ31 179 DQ63 42 VSS 88 DQ59 134 CB4 180 VDD 43 A1 89 VSS 135 CB5 181 SA0 44 CB0 90 NC 136 VDD 182 SA1 45 CB1 91 SDA 137 CK0 183 SA2 46 VDD 92 SCL 138 /CK0 184 VDDSPD Data Sheet E0415E20 (Ver. 2.0) 3 EBD11ED8ADFB Pin Description Pin name Function A0 to A12 Address input Row address Column address BA0, BA1 Bank select address DQ0 to DQ63 Data input/output CB0 to CB7 Check bit (Data input/output) /RAS Row address strobe command /CAS Column address strobe command /WE Write enable /CS0, /CS1 Chip select A0 to A12 A0 to A9, A11 CKE0, CKE1 Clock enable CK0 to CK2 Clock input /CK0 to /CK2 Differential clock input DQS0 to DQS8 Input and output data strobe DM0 to DM8/DQS9 to DQS17 Input mask SCL Clock input for serial PD SDA Data input/output for serial PD SA0 to SA2 Serial address input VDD Power for internal circuit VDDSPD Power for serial EEPROM VREF Input reference voltage VSS Ground VDDID VDD identification flag NC No connection Data Sheet E0415E20 (Ver. 2.0) 4 EBD11ED8ADFB Serial PD Matrix Byte No. 0 1 Function described Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 1 0 0 0 0 0 0 0 80H 128 bytes 0 0 0 0 1 0 0 0 08H 256 bytes 2 Memory type 0 0 0 0 0 1 1 1 07H DDR SDRAM 3 Number of row address 0 0 0 0 1 1 0 1 0DH 13 4 Number of column address 0 0 0 0 1 0 1 1 0BH 11 5 Number of DIMM ranks 0 0 0 0 0 0 1 0 02H 2 6 Module data width 0 1 0 0 1 0 0 0 48H 72 bits 7 Module data width continuation 0 0 0 0 0 0 0 0 00H 0 8 Voltage interface level of this assembly 0 0 0 0 0 1 0 0 04H SSTL2 9 DDR SDRAM cycle time, CL = 2.5 -6B 0 1 1 0 0 0 0 0 60H 6.0ns*1 0 1 1 1 0 1 0 1 75H 7.5ns*1 0 1 1 1 0 0 0 0 70H 0.7ns*1 0 1 1 1 0 1 0 1 75H 0.75ns*1 -7A, -7B 10 SDRAM access from clock (tAC) -6B -7A, -7B 11 DIMM configuration type 0 0 0 0 0 0 1 0 02H ECC 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.6µs 13 Primary SDRAM width 0 0 0 0 1 0 0 0 08H ×8 14 Error checking SDRAM width 0 0 0 0 1 0 0 0 08H ×8 0 0 0 0 0 0 0 1 01H 1 CLK 0 0 0 0 1 1 1 0 0EH 2,4,8 0 0 0 0 0 1 0 0 04H 4 0 0 0 0 1 1 0 0 0CH 2, 2.5 0 0 0 0 0 0 0 1 01H 0 0 0 0 0 0 0 1 0 02H 1 15 16 17 18 19 20 SDRAM device attributes: Minimum clock delay back-to-back column access SDRAM device attributes: Burst length supported SDRAM device attributes: Number of banks on SDRAM device SDRAM device attributes: /CAS latency SDRAM device attributes: /CS latency SDRAM device attributes: /WE latency 21 SDRAM module attributes 0 0 1 0 0 0 0 0 20H Differential Clock 22 SDRAM device attributes: General 1 1 0 0 0 0 0 0 C0H VDD ± 0.2V 23 Minimum clock cycle time at CL = 2 -6B, -7A 0 1 1 1 0 1 0 1 75H 7.5ns*1 1 0 1 0 0 0 0 0 A0H 10ns*1 Maximum data access time (tAC) from clock at CL = 2 0 -6B 1 1 1 0 0 0 0 70H 0.7ns*1 0 1 1 1 0 1 0 1 75H 0.75ns*1 0 0 0 0 0 0 0 0 00H 0 1 0 0 1 0 0 0 48H 18ns 0 1 0 1 0 0 0 0 50H 20ns -7B 24 -7A, -7B 25 to 26 27 Minimum row precharge time (tRP) -6B -7A, -7B Data Sheet E0415E20 (Ver. 2.0) 5 EBD11ED8ADFB Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 28 Minimum row active to row active delay (tRRD) -6B 0 0 1 1 0 0 0 0 30H 12ns 0 0 1 1 1 1 0 0 3CH 15ns 0 1 0 0 1 0 0 0 48H 18ns 0 1 0 1 0 0 0 0 50H 20ns 0 0 1 0 1 0 1 0 2AH 42ns 0 0 1 0 1 1 0 1 2DH 45ns -7A, -7B 29 Minimum /RAS to /CAS delay (tRCD) -6B 30 Minimum active to precharge time (tRAS) -6B -7A, -7B -7A, -7B 31 Module rank density 1 0 0 0 0 0 0 0 80H 512M bytes 32 Address and command setup time before clock (tIS) -6B 0 1 1 1 0 1 0 1 75H 0.75ns*1 1 0 0 1 0 0 0 0 90H 0.9ns*1 Address and command hold time after clock (tIH) 0 -6B 1 1 1 0 1 0 1 75H 0.75ns*1 1 0 0 1 0 0 0 0 90H 0.9ns*1 0 1 0 0 0 1 0 1 45H 0.45ns*1 0 1 0 1 0 0 0 0 50H 0.5ns*1 0 1 0 0 0 1 0 1 45H 0.45ns*1 0 1 0 1 0 0 0 0 50H 0.5ns*1 -7A, -7B 33 -7A, -7B 34 Data input setup time before clock (tDS) -6B -7A, -7B 35 Data input hold time after clock (tDH) -6B -7A, -7B 36 to 40 Superset information 0 0 0 0 0 0 0 0 00H Future use 41 Active command period (tRC) -6B 0 0 1 1 1 1 0 0 3CH 60ns*1 0 1 0 0 0 0 0 1 41H 65ns*1 0 1 0 0 1 0 0 0 48H 72ns*1 0 1 0 0 1 0 1 1 4BH 75ns*1 -7A, -7B 42 Auto refresh to active/ Auto refresh command cycle (tRFC) -6B -7A, -7B 43 SDRAM tCK cycle max. (tCK max.) 0 0 1 1 0 0 0 0 30H 12ns*1 44 Dout to DQS skew -6B 0 0 1 0 1 1 0 1 2DH 450ps*1 0 0 1 1 0 0 1 0 32H 500ps*1 0 1 0 1 0 1 0 1 55H 550ps*1 0 1 1 1 0 1 0 1 75H 750ps*1 Future use -7A, -7B 45 Data hold skew (tQHS) -6B -7A, -7B 46 to 61 Superset information 0 0 0 0 0 0 0 0 00H 62 SPD Revision 0 0 0 0 0 0 0 0 00H 63 Checksum for bytes 0 to 62 -6B 0 1 0 1 0 1 0 0 54H -7A 0 0 0 0 1 0 1 1 0BH -7B 0 0 1 1 0 1 1 0 36H 0 1 1 1 1 1 1 1 7FH 64 to 65 Manufacturer’s JEDEC ID code Data Sheet E0415E20 (Ver. 2.0) 6 Continuation code EBD11ED8ADFB Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH Elpida Memory 67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H 72 Manufacturing location × × × × × × × × ×× (ASCII-8bit code) 73 Module part number 0 1 0 0 0 1 0 1 45H E 74 Module part number 0 1 0 0 0 0 1 0 42H B 75 Module part number 0 1 0 0 0 1 0 0 44H D 76 Module part number 0 0 1 1 0 0 0 1 31H 1 77 Module part number 0 0 1 1 0 0 0 1 31H 1 78 Module part number 0 1 0 0 0 1 0 1 45H E 79 Module part number 0 1 0 0 0 1 0 0 44H D 80 Module part number 0 0 1 1 1 0 0 0 38H 8 81 Module part number 0 1 0 0 0 0 0 1 41H A 82 Module part number 0 1 0 0 0 1 0 0 44H D 83 Module part number 0 1 0 0 0 1 1 0 46H F 84 Module part number 0 1 0 0 0 0 1 0 42H B 85 Module part number 0 0 1 0 1 1 0 1 2DH — 86 Module part number -6B 0 0 1 1 0 1 1 0 36H 6 0 0 1 1 0 1 1 1 37H 7 87 Module part number -7A 0 1 0 0 0 0 0 1 41H A 0 1 0 0 0 0 1 0 42H B -7A, -7B -6B, -7B 88 to 90 Module part number 0 0 1 0 0 0 0 0 20H (Space) 91 Revision code 0 0 1 1 0 0 0 0 30H Initial 92 Revision code 0 0 1 0 0 0 0 0 20H (Space) 93 Manufacturing date × × × × × × × × ×× 94 Manufacturing date × × × × × × × × ×× 95 to 98 Module serial number 99 to 127 Manufacture specific data Note: These specifications are defined based on component specification, not module. Data Sheet E0415E20 (Ver. 2.0) 7 Year code (HEX) Week code (HEX) EBD11ED8ADFB Block Diagram /CS1 /CS0 RS RS DM0/DQS9 DQS0 8 RS DQ0 to DQ7 DQS /CS DQ U1 DM DQS /CS DQ U10 DM RS RS DM1/DQS10 DQS1 8 RS DQ8 to DQ15 DQS /CS DQ U11 DM DQS /CS DQ U2 DM RS RS DM2/DQS11 DQS2 8 RS DQ16 to DQ23 DQS /CS DQ U3 DM DQS /CS DM DQ U12 RS RS DM3/DQS12 DQS3 8 RS DQ24 to DQ31 DQS /CS DQ U13 DM DQS /CS DQ U4 DM RS RS DM4/DQS13 DQS4 8 RS DQ32 to DQ39 DQS /CS DQ U14 DM DQS /CS DQ U5 DM RS RS DM5/DQS14 DQS5 8 RS DQ40 to DQ47 DQS /CS DQ U6 DM DQS /CS DQ U15 DM RS RS DM6/DQS15 DQS6 8 RS DQ48 to DQ55 DQS /CS DQ U16 DM DQS /CS DQ U7 DM RS RS DM7/DQS16 DQS7 8 RS DQ56 to DQ63 DQS /CS DQ U8 DM DQS /CS DM DQ U17 RS RS DM8/DQS17 DQS8 8 RS CB0 to CB7 DQS /CS DQ U9 DM DQS /CS DM DQ U18 3.3Ω * U1 to U18: 512M bits DDR SDRAM U20: 2k bits EEPROM RS: 22Ω VDD A0 to A12 3.3Ω /RAS U1 to U18 VREF U1 to U18 VSS U1 to U18 VDDID 3.3Ω /RAS (U1 to U18) 3.3Ω /CAS (U1 to U18) /CAS 3.3Ω /WE (U1 to U18) /WE CKE0 open A0 to A12 (U1 to U18) BA0, BA1 (U1 to U18) BA0, BA1 CKE (U1, U3, U6, U8, U9, U11, U13, U14, U16) CKE1 CKE (U2, U4, U5, U7, U10, U12, U15, U17, U18) Clock wiring Clock input DDR SDRAMS CK0, /CK0 6DRAM loads CK1, /CK1 6DRAM loads CK2, /CK2 6DRAM loads Serial PD SCL SCL SDA SDA U20 A0 Note: Wire per Clock loading table/Wiring diagrams. A1 A2 SA0 SA1 SA2 Notes: 1. The SDA pull-up resistor is required due to the open-drain/open-collector output. 2. The SCL pull-up resistor is recommended because of the normal SCL line inacitve "high" state. Data Sheet E0415E20 (Ver. 2.0) 8 EBD11ED8ADFB Logical Clock Net Structure 6DRAM loads CLK 5DRAM loads DRAM1 R = 120Ω DRAM2 DRAM1 R = 120Ω DRAM3 DRAM2 DRAM3 DIMM connector DIMM connector DRAM4 Capacitance DRAM5 DRAM5 DRAM6 DRAM6 /CLK 4DRAM loads 3DRAM loads DRAM1 R = 120Ω DRAM2 DRAM1 R = 120Ω Capacitance Capacitance DRAM3 DIMM connector DIMM connector 2DRAM loads Capacitance Capacitance DRAM5 DRAM5 DRAM6 Capacitance 1DRAM loads DRAM1 R = 120Ω Capacitance Capacitance R = 120Ω Capacitance Capacitance DRAM3 DIMM connector DIMM connector Capacitance Capacitance DRAM5 Capacitance Capacitance Data Sheet E0415E20 (Ver. 2.0) 9 EBD11ED8ADFB Electrical Specifications • All voltages are referenced to VSS (GND). Absolute Maximum Ratings Parameter Symbol Value Unit Voltage on any pin relative to VSS VT –0.5 to +3.6 V Supply voltage relative to VSS VDD –0.5 to +3.6 V Short circuit output current IOS 50 mA Power dissipation PD 18 W Operating ambient temperature TA 0 to +70 °C Storage temperature Tstg –55 to +125 °C Note 1 Note: 1. DDR SDRAM component specification. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Notes Supply voltage VDD,VDDQ 2.3 2.5 2.7 V 1 VSS 0 0 0 V Input reference voltage VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V Termination voltage VTT VREF – 0.04 VREF VREF + 0.04 V Input high voltage VIH (DC) VREF + 0.15 — VDDQ + 0.3 V 2 Input low voltage VIL (DC) –0.3 — VREF – 0.15 V 3 VIN (DC) –0.3 — VDDQ + 0.3 V 4 VIX (DC) 0.5 × VDDQ − 0.2V 0.5 × VDDQ 0.5 × VDDQ + 0.2V V VID (DC) 0.36 — VDDQ + 0.6 Input voltage level, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input differential voltage, CK and /CK inputs Notes: 1. 2. 3. 4. 5. 6. V 5, 6 VDDQ must be lower than or equal to VDD. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns. VIN (DC) specifies the allowable DC execution of each differential input. VID (DC) specifies the input differential voltage required for switching. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V if measurement. Data Sheet E0415E20 (Ver. 2.0) 10 EBD11ED8ADFB DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V) Parameter Symbol Grade max. Operating current (ACTV-PRE) IDD0 -6B -7A, -7B 1935 1710 mA Operating current (ACTV-READ-PRE) IDD1 -6B -7A, -7B 2385 2070 mA Idle power down standby current IDD2P 54 mA 540 450 mA -6B -7A, -7B Unit Test condition CKE ≥ VIH, tRC = tRC (min.) CKE ≥ VIH, BL = 2, CL = 2.5, tRC = tRC (min.) CKE ≤ VIL Notes 1, 2, 9 1, 2, 5 4 CKE ≥ VIH, /CS ≥ VIH, 4, 5 DQ, DQS, DM = VREF CKE ≥ VIH, /CS ≥ VIH, 4, 10 DQ, DQS, DM = VREF Floating idle standby current IDD2F Quiet idle standby current IDD2Q 360 mA Active power down standby current IDD3P 360 mA CKE ≤ VIL 3 Active standby current IDD3N mA CKE ≥ VIH, /CS ≥ VIH tRAS = tRAS (max.) 3, 5, 6 Operating current (Burst read operation) IDD4R mA CKE ≥ VIH, BL = 2, CL = 2.5 1, 2, 5, 6 Operating current (Burst write operation) IDD4W mA CKE ≥ VIH, BL = 2, CL = 2.5 1, 2, 5, 6 Auto refresh current IDD5 Self refresh current IDD6 Operating current (4 banks interleaving) IDD7A -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B -6B -7A, -7B 1170 990 2835 2385 2835 2385 5760 5400 mA 72 mA 5175 4365 mA tRFC = tRFC (min.), Input ≤ VIL or ≥ VIH Input ≥ VDD – 0.2 V Input ≤ 0.2 V BL = 4 1, 5, 6, 7 Notes. 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one cycle. 6. DQ, DM and DQS transition twice per one clock cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once every two clock cycles. 10. Command/Address stable at ≥ VIH or ≤ VIL. DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V) Parameter Symbol min. max. Unit Test condition Input leakage current ILI –36 36 µA VDD ≥ VIN ≥ VSS Note Output leakage current ILO –10 10 µA VDD ≥ VOUT ≥ VSS Output high current IOH –15.2 — mA VOUT = 1.95V 1 Output low current IOL 15.2 — mA VOUT = 0.35V 1 Note: 1. DDR SDRAM component specification. Pin Capacitance (TA = 25°C, VDD = 2.5V ± 0.2V) Parameter Symbol Pins max. Unit Input capacitance CI1 Address, /RAS, /CAS, /WE, /CS, CKE 60 pF Input capacitance CI2 CK, /CK 50 pF Data and DQS input/output capacitance CO DQ, DQS, CB 20 pF Data Sheet E0415E20 (Ver. 2.0) 11 Note EBD11ED8ADFB AC Characteristics (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V) (DDR SDRAM Component Specification) -6B -7A -7B Parameter Symbol min. max. min. max. min. max. Unit Notes Clock cycle time (CL = 2) tCK 7.5 12 7.5 12 10 12 ns (CL = 2.5) tCK 6 12 7.5 12 7.5 12 ns 10 CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK half period tHP min (tCH, tCL) — min (tCH, tCL) — min (tCH, tCL) — tCK 0.7 –0.75 0.75 –0.75 0.75 ns 2, 11 0.6 –0.75 0.75 –0.75 0.75 ns 2, 11 0.45 — 0.5 — 0.5 ns 3 DQ output access time from tAC –0.7 CK, /CK DQS output access time from tDQSCK –0.6 CK, /CK DQS to DQ skew tDQSQ — DQ/DQS output hold time from DQS tQH tHP – tQHS — tHP – tQHS — tHP – tQHS — ns Data hold skew factor tQHS — 0.55 — 0.75 — 0.75 ns –0.7 0.7 –0.75 0.75 –0.75 0.75 ns 5, 11 –0.7 0.7 –0.75 0.75 –0.75 0.75 ns 6, 11 Data-out high-impedance tHZ time from CK, /CK Data-out low-impedance time tLZ from CK, /CK Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK DQ and DM input setup time tDS 0.45 — 0.5 — 0.5 — ns 8 DQ and DM input hold time 0.45 — 0.5 — 0.5 — ns 8 1.75 — 1.75 — 1.75 — ns 7 — 0 — 0 — ns tDH DQ and DM input pulse width tDIPW Write preamble setup time tWPRES 0 Write preamble tWPRE 0.25 — 0.25 — 0.25 — tCK Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK 0.75 1.25 0.75 1.25 0.75 1.25 tCK 0.2 — 0.2 — 0.2 — tCK 0.2 — 0.2 — 0.2 — tCK Write command to first DQS tDQSS latching transition DQS falling edge to CK setup tDSS time DQS falling edge hold time tDSH from CK 9 DQS input high pulse width tDQSH 0.35 — 0.35 — 0.35 — tCK DQS input low pulse width tDQSL 0.35 — 0.35 — 0.35 — tCK tIS 0.75 — 0.9 — 0.9 — ns 8 tIH 0.75 — 0.9 — 0.9 — ns 8 tIPW 2.2 — 2.2 — 2.2 — ns 7 tMRD 2 — 2 — 2 — tCK tRAS 42 120000 45 120000 45 120000 ns tRC 60 — 65 — 65 — ns tRFC 72 — 75 — 75 — ns Address and control input setup time Address and control input hold time Address and control input pulse width Mode register set command cycle time Active to Precharge command period Active to Active/Auto refresh command period Auto refresh to Active/Auto refresh command period Data Sheet E0415E20 (Ver. 2.0) 12 EBD11ED8ADFB -6B -7A -7B Parameter Symbol min. max. min. max. min. max. Unit Notes Active to Read/Write delay tRCD 18 — 20 — 20 — ns tRP 18 — 20 — 20 — ns tRAP tRCD min. — tRCD min. — tRCD min. — ns tRRD 12 — 15 — 15 — ns 15 — 15 — 15 — ns Precharge to active command period Active to auto precharge delay Active to active command period Write recovery time tWR Auto precharge write tDAL recovery and precharge time Internal write to Read tWTR command delay Average periodic refresh tREF interval (tWR/tCK)+ — (tRP/tCK) (tWR/tCK)+ — (tRP/tCK) (tWR/tCK)+ — (tRP/tCK) tCK 1 — 1 — 1 — tCK — 7.8 — 7.8 — 7.8 µs 13 Notes: 1. All the AC parameters listed in this data sheet is component specifications. For AC testing conditions, refer to the corresponding component data sheet. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VTT. 3. The timing reference level is VTT. 4. Output valid window is defined to be the period between two successive transition of data out or DQS (read) signals. The signal transition is defined to occur when the signal level crossing VTT. 5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. Input valid windows is defined to be the period between two successive transition of data input or DQS (write) signals. The signal transition is defined to occur when the signal level crossing VREF. 8. The timing reference level is VREF. 9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not assured. 11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these values are 10% of tCK. 12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than 0.4V/400 cycle. 13. tDAL = (tWR/tCK)+(tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns, tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3) tDAL = 5 clocks Data Sheet E0415E20 (Ver. 2.0) 13 EBD11ED8ADFB Timing Parameter Measured in Clock Cycle for unbuffered DIMM Number of clock cycle tCK Parameter 6ns Symbol min. 7.5ns max. min. max. Unit Write to pre-charge command delay (same bank) tWPD 4 + BL/2 — 3 + BL/2 — tCK Read to pre-charge command delay (same bank) tRPD BL/2 — BL/2 — tCK Write to read command delay (to input all data) tWRD 2 + BL/2 — 2 + BL/2 — tCK Burst stop command to write command delay (CL = 2) tBSTW — — 2 — tCK (CL = 2.5) tBSTW 3 — 3 — tCK Burst stop command to DQ High-Z (CL = 2) tBSTZ — — 2 2 tCK (CL = 2.5) tBSTZ 2.5 2.5 2.5 2.5 tCK Read command to write command delay (to output all data) (CL = 2) tRWD — — 2 + BL/2 — tCK (CL = 2.5) tRWD 3 + BL/2 — 3 + BL/2 — tCK Pre-charge command to High-Z (CL = 2) tHZP — — 2 2 tCK (CL = 2.5) tHZP 2.5 2.5 2.5 2.5 tCK Write command to data in latency tWCD 1 1 1 1 tCK Write recovery time tWR 3 — 2 — tCK DM to data in latency tDMD 0 0 0 0 tCK Mode register set command cycle time tMRD 2 — 2 — tCK Self refresh exit to non-read command tSNR 12 — 10 — tCK Self refresh exit to read command tSRD 200 — 200 — tCK Power down entry tPDEN 1 1 1 1 tCK Power down exit to command input tPDEX 1 — 1 — tCK Data Sheet E0415E20 (Ver. 2.0) 14 EBD11ED8ADFB Pin Functions CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A12 (input pins) Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9, AY11) is loaded via the A0 to the A9 and the A11 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. BA0, BA1 (input pin) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. DQ, CB (input and output pins) Data are input to and output from these pins. DQS (input and output pin) DQS provide the read data strobes (as output) and the write data strobes (as input). Data Sheet E0415E20 (Ver. 2.0) 15 EBD11ED8ADFB DM (input pins) DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and VREF VDD (power supply pins) 2.5V is applied. (VDD is for the internal circuit.) VDDSPD (power supply pin) 2.5V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected. Detailed Operation Part and Timing Waveforms Refer to the EDD5104ADTA, EDD5108ADTA, EDD5116ADTA datasheet (E0384E). Data Sheet E0415E20 (Ver. 2.0) 16 EBD11ED8ADFB Physical Outline Unit: mm 133.35 ± 0.15 128.95 4.00 max 4.00 min (DATUM -A-) (64.48) 2.30 Component area (Front) 1 92 B A 64.77 1.27 ± 0.10 49.53 4.00 ± 0.10 Component area (Back) R 2.00 31.75 ± 0.15 184 17.80 93 10.00 2 – φ 2.50 ± 0.10 3.00 min Detail B (DATUM -A-) 1.27 typ 6.62 0.20 ± 0.15 2.50 ± 0.20 Detail A 2.175 R 0.90 1.00 ± 0.05 3.80 6.35 1.80 ± 0.10 Note: Tolerance on all dimensions ± 0.13 unless otherwise specified. ECA-TS2-0040-01 Data Sheet E0415E20 (Ver. 2.0) 17 EBD11ED8ADFB CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. MDE0202 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Data Sheet E0415E20 (Ver. 2.0) 18 EBD11ED8ADFB The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Data Sheet E0415E20 (Ver. 2.0) 19