B1040WS HD SD0.48 SOD323 Plastic-Encapsulate Diodes Schottky Rectifier Features ● VR 40V ● IFAV 1A SOD3 23 Applications ● Low Voltage Rectification ● Low Power Consumption Applications ● High Efficiency DC/DC Conversion Marking ● SZ Parameter Symbol Value Unit DC reverse voltage VR 40 V Mean rectifying current IO 1 A Non-repetitive Peak Forward Surge Current @ t=8.3ms IFSM 9 A Power Dissipation PD 0.25 W RθJA 400 ℃/W Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Thermal Resistance from Junction to Ambient Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Reverse voltage VBR Reverse current IR Forward voltage Diode capacitance VF CD Test Condition IR =1mA Min Type Max 40 Unit V VR =20V 2 20 µA VR =40V 5 50 µA IF =0.5A 0.45 0.50 V IF =0.7A 0.48 0.53 V IF =1A 0.5 0.58 V VR=10V, f=1MHz 18 High Diode Semiconductor pF 1 Typical Characteristics Reverse Forward Characteristics 3 1 Ta=100℃ = 25 ℃ a T a T = 10 0℃ REVERSE CURRENT IR (uA) 1000 FORWARD CURRENT IF (A) Characteristics 10000 0.1 100 Ta=25℃ 10 1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 0 1.0 10 20 30 40 REVERSE VOLTAGE VR (V) Capacitance Characteristics Power Derating Curve 100 300 Ta=25℃ 250 POWER DISSIPATION PD (mW) CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 80 60 40 20 200 150 100 50 0 0 0 5 10 15 20 25 30 0 25 50 75 AMBIENT TEMPERATURE Ta (℃) 100 125 REVERSE VOLTAGE VR (V) High Diode Semiconductor 2 SOD323 Package Outline Dimensions SOD323 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD323 1.46 2.9 1.25 High Diode Semiconductor 4