isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX77 DESCRIPTION ·Contunuous Collector Current-IC= 5A ·Collector Power Dissipation: PC= 40W @TC= 25℃ ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) APPLICATIONS ·Designed for use in switching regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation@TC=25℃ 40 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 4.4 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX77 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 80 V Collector-Emitter Voltage IC= 2mA; VBE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(on) Base-Emitter On Voltage IC= 5A; IB= 0.5A 1.3 V ICEO Collector Cutoff Current VCE= 60V; IB= 0 10 μA ICBO Collector Cutoff Current VCB= 80V; IE= 0 VCB= 80V; IE= 0, TC=150℃ 0.5 150 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.5 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 70 hFE-2 DC Current Gain IC= 2A; VCE= 5V 50 hFE-3 DC Current Gain IC= 5A; VCE= 5V 30 hFE-4 DC Current Gain IC= 1A; VCE= 5V; TC= -40℃ 25 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 1.5 VCES fT CONDITIONS MIN MAX UNIT 120 MHz Switching Times tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 5A; IB1= -IB2= 0.5A; VCC= 40V 2 0.2 μs 0.5 μs 0.2 μs