BPV22NF, BPV22NFL Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times 94 8633 • Angle of half sensitivity: ϕ = ± 60° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS DESCRIPTION • High speed detector for infrared radiation BPV22NF is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. BPV22NFL has long leads, other specifications like BPV22NF. • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (µA) ϕ (deg) λ0.5 (nm) BPV22NF 85 ± 60 790 to 1050 BPV22NFL 85 ± 60 790 to 1050 PACKAGE FORM COMPONENT Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Note Tamb = 25 °C, unless otherwise specified www.vishay.com 354 For technical questions, contact: [email protected] Document Number: 81509 Rev. 1.7, 08-Sep-08 BPV22NF, BPV22NFL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage SYMBOL MIN. TYP. MAX. UNIT 1 1.3 V 2 30 nA IF = 50 mA VF IR = 100 µA, E = 0 V(BR) VR = 10 V, E = 0 Iro VR= 0 V, f = 1 MHz, E = 0 CD 70 VR= 12 V, f = 1 MHz RS 400 Ω Ee = 1 mW/cm2, λ = 950 nm Vo 370 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 80 µA 85 µA TKIra 0.1 %/K VR = 5 V, λ = 870 nm s(λ) 0.57 A/W VR = 5 V, λ = 950 nm s(λ) 0.6 A/W Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 940 nm λ0.5 790 to 1050 nm λ = 950 nm η 90 % Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz Detectivity VR = 10 V, λ = 950 nm D* 6 x 1012 cm√Hz/W Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns VR = 12 V, RL = 1 kΩ, λ = 870 nm fc 4 MHz VR = 12 V, RL = 1 kΩ, λ = 950 nm fc 1 MHz Breakdown voltage Reverse dark current Diode capacitance Serial resistance Open circuit voltage Ee Reverse light current = 1 mW/cm2, λ = 870 nm, VR = 5 V Ee = 1 Temperature coefficient of Ira Absolute spectral sensitivity λ = 950 nm, VR = 10 V mW/cm2, Range of spectral bandwidth Quantum efficiency Cut-off frequency 60 V 55 Ira pF Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current CD - Diode Capacitance (pF) 8 6 E=0 f = 1 MHz 4 2 0 1 0.1 94 8430 10 Fig. 1 - Reverse Dark Current vs. Ambient Temperature VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 VR- Reverse Voltage (V) Document Number: 81509 Rev. 1.7, 08-Sep-08 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 355 BPV22NF, BPV22NFL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 1.2 S(λ)rel - Relative Spectral Sensivity I ra - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 0.8 0.6 0.4 0.2 0.0 750 10 1 850 E e - Irradiance (mW/cm ) Fig. 3 - Reverse Light Current vs. Irradiance 950 1050 1150 λ - Wavelength (nm) 94 8426 2 94 8411 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10 ° 20 ° 30° 0.5 mW/cm2 λ = 950 nm 2 0.2 mW/cm 10 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.02 mW/cm2 1 0.1 1 10 100 VR - Reverse Voltage (V) 94 8412 ϕ - Angular Displacement Srel - Relative Sensitivity I ra - Reverse Light Current (µA) 1 mW/cm2 0.6 0.4 0.2 0 94 8413 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 356 For technical questions, contact: [email protected] Document Number: 81509 Rev. 1.7, 08-Sep-08 BPV22NF, BPV22NFL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: BPV22NF 5 ± 0.15 3.2 ± 0.2 (2.4) ± 0.2 ± 0.3 6 R 2.25 (sphere) 18.8 ± 0.5 8.6 ± 0.3 < 0.7 2.5 4.5 + 0.1 - 0.3 0.65 + 0.1 - 0.2 0.1 3.4 +- 0.3 Area not plane A C 0.45 + 0.2 - 0.1 0.4 + 0.15 2.54 nom. 1.1 technical drawings according to DIN specifications ± 0.2 Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 PACKAGE DIMENSIONS in millimeters: BPV22NFL 5 3.2 ± 0.2 (2.4) 4.5 ± 0.2 ± 0.3 R 2.2 here ) 10.8 6 5 (sp 32.5 ± 0.5 ± 0.3 < 0.7 2.5 ± 0.15 + 0.1 - 0.3 0.75 - 0.12 0.1 3.4 +- 0.3 Area not plane A C 0.63 ± 0.1 2.54 nom. 0.4 ± 0.1 1.1 ± 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5236.01-4 Issue: 2; 07.07.97 96 12205 Document Number: 81509 Rev. 1.7, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 357 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1