PHILIPS BY329-1500S Damper diode fast, high-voltage Datasheet

Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
BY329-1500, BY329-1500S
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 1500 V
k
1
VF ≤ 1.35 V / 1.5 V
a
2
IF(peak) = 6 A (f = 16 kHz)
IF(peak) = 6 A (f = 70 kHz)
IFSM ≤ 75 A
trr ≤ 230 ns / 160 ns
GENERAL DESCRIPTION
PINNING
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
2
1
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
VRSM
CONDITIONS
MIN.
MAX.
UNIT
-
1500
V
-
1500
V
-
1300
V
VRWM
Peak non-repetitive peak
reverse voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
IF(peak)
Peak working forward current
f = 16 kHz
f = 70 kHz
-
IFRM
Peak repetitive forward
current
RMS forward current
Peak non-repetitive forward
current
t = 25 µs; δ = 0.5;
Tmb ≤ 123 ˚C
-
14
A
-
11
75
A
A
-40
-
150
150
˚C
˚C
VRRM
BY329
IF(RMS)
IFSM
Tstg
Tj
Storage temperature
Operating junction
temperature
t = 10 ms
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
-1500
6
-
-1500S
6
A
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
CONDITIONS
Thermal resistance junction to
mounting base
Thermal resistance junction to in free air
ambient
September 1998
1
MIN.
TYP.
MAX.
UNIT
-
-
2.0
K/W
-
60
-
K/W
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1500, BY329-1500S
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329 1500 1500S 1500 1500S
VF
Forward voltage
IR
Reverse current
IF = 6.5 A
IF = 6.5 A; Tj = 125 ˚C
VR = 1300 V
VR = 1300 V; Tj = 125 ˚C
1.1
1.05
-
1.3
1.2
250
1
1.45
1.35
-
1.6
1.5
250
1
V
V
µA
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
BY329 1500 1500S
trr
Reverse recovery time
Qs
Vfr
tfr
Reverse recovery charge
Peak forward recovery voltage
Forward recovery time
I
IF = 1 A; VR ≥ 30 V;
dIF/dt = 50A/µs
IF = 2 A; -dIF/dt = 20 A/µs
IF = 6.5A; dIF/dt = 50A/µs
IF = 6.5A; dIF/dt = 50A/µs
F
I
1500
1500S
0.18
0.13
0.23
0.16
µs
1.6
17
210
0.7
23
220
2.0
30
300
0.95
40
320
µC
V
ns
dI
F
UNIT
F
dt
trr
10%
time
tfr
time
VF
Qs
V
VF
5V
fr
I
25%
100%
R
time
Fig.1. Definition of Vfr and tfr
September 1998
Fig.2. Definition of trr and Qs
2
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1500, BY329-1500S
IF / A
VCC
BY32915S
30
Tj = 125 C
Tj = 25 C
20
Line output transformer
LY
10
Cf
Cs
max
D1
deflection transistor
0
Fig.3. Basic horizontal deflection circuit.
100
typ
Maximum pulse width / us
0
0.5
1
1.5
VF / V
2
Fig.6. BY329-1500S Typical and maximum forward
characteristic IF = f(VF); parameter Tj
BY459X-1500
10
Transient thermal impedance, Zth j-mb (K/W)
VRRM
V
1
pulse
width tp
time
period T
0.1
10
PD
0.01
1
10
0.001
1us
100
line frequency / kHz
Fig.4. Maximum allowable pulse width tp versus line
frequency; Basic horizontal deflection circuit.
30
IF / A
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229
10s
Fig.7. Transient thermal impedance Zth = f(tp)
BY32915
Tj = 125 C
Tj = 25 C
20
10
typ
max
0
0
0.5
1
1.5
VF / V
2
Fig.5. BY329-1500 Typical and maximum forward
characteristic IF = f(VF); parameter Tj
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1500, BY329-1500S
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.8. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329-1500, BY329-1500S
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.100
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