FDP053N08B_F102 N-Channel PowerTrench® MOSFET 80V, 120A, 5.3mW Features Description • RDS(on) = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Low FOM R DS(on)*QG • Low reverse recovery charge, Qrr • Soft reverse recovery body diode • Enables highly efficiency in synchronous rectification Application • Fast Switching Speed • Synchronous Rectification for Server / Telecom PSU • 100% UIL Tested • Battery Charger and Battery Protection circuit • RoHS Compliant • DC motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G D TO-220 S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter - Continuous (TC = 25oC, Silicon Limited) Drain Current - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC Units V ±20 V 120* 85.2* A 75 (Note 1) 480* A (Note 2) 365 mJ 6.0 V/ns (Note 3) (TC = 25oC) Ratings 80 146 W 0.97 W/oC -55 to +175 o C 300 oC Ratings Units * Package limitation current is 75A. Thermal Characteristics Symbol Parameter RqJC Thermal Resistance, Junction to Case 1.03 RqJA Thermal Resistance, Junction to Ambient 62.5 ©2012 Fairchild Semiconductor Corporation FDP053N08B_F102 Rev.C0 1 oC/W www.fairchildsemi.com FDP053N08B_F102 Channel PowerTrench® MOSFET June 2012 Device Marking FDP053N08B Device FDP053N08B_F102 Package TO-220 Description F102: Trimmed Leads Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 80 - - V - 0.089 - V/oC Off Characteristics BVDSS DBVDSS DTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250mA, VGS = 0V ID = 250mA, Referenced to 25oC - - 1 VDS = 64V, TC = 125oC VDS = 64V, VGS = 0V - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 4.2 5.3 mW - 100 - S - 4480 5960 pF - 740 985 pF mA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250mA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 75A VDS = 10V, ID = 75A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 40V, VGS = 0V f = 1MHz - 20.5 - pF VDS = 40V, VGS = 0V - 1333 - pF - 65.4 85 nC VDS = 40V, ID = 75A VGS = 10V - 26.7 - nC - 14.3 - nC - 15.3 - nC f = 1MHz - 1.2 - W - 32 74 ns VDD = 40V, ID = 75A VGS = 10V, RGEN = 4.7W - 30 70 ns - 44 98 ns - 16 42 ns (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 120* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 480* A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time 59.3 - ns Qrr Reverse Recovery Charge VGS = 0V, VDD=40V, ISD = 75A dIF/dt = 100A/ms - 62.5 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 15.6A, Starting TJ = 25°C 3. ISD £ 100A, di/dt £ 200A/ms, VDD £ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FDP053N08B_F102 Rev.C0 2 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 300 *Notes: 1. VDS = 10V 2. 250ms Pulse Test 10 *Notes: 1. 250ms Pulse Test o 2 0.1 2. TC = 25 C ID, Drain Current[A] ID, Drain Current[A] 100 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 1 VDS, Drain-Source Voltage[V] 10 o 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 400 IS, Reverse Drain Current [A] 5.5 5.0 4.5 VGS = 10V 4.0 VGS = 20V 3.5 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V 2. 250ms Pulse Test o *Note: TC = 25 C 0 90 180 270 ID, Drain Current [A] 360 1 0.3 450 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1.5 10 Ciss 100 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] -55 C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 6.0 3.0 o 150 C 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [mW], Drain-Source On-Resistance o 25 C 6 4 2 Crss 1 10 VDS, Drain-Source Voltage [V] FDP053N08B_F102 Rev.C0 VDS = 16V VDS = 40V VDS = 64V 8 0 100 3 *Note: ID = 75A 0 20 40 60 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250mA 0.90 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 0.6 -80 100 ID, Drain Current [A] 100ms 1ms 10 Operation in This Area is Limited by R DS(on) 1 10ms 100ms DC SINGLE PULSE o TC = 25 C 0.1 75 VGS = 10V 50 25 o TJ = 175 C o o RqJC = 1.03 C/W RqJC = 1.03 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 20 2.5 IAS, AVALANCHE CURRENT (A) 2.0 EOSS, [mJ] 200 125 100 1.5 1.0 0.5 0.0 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current 1000 0.01 *Notes: 1. VGS = 10V 2. ID = 75A 0.8 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature ID, Drain Current [A] 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 0 15 30 45 60 75 VDS, Drain to Source Voltage [V] FDP053N08B_F102 Rev.C0 10 TJ = 25 oC TJ = 150 oC 1 0.001 90 0.01 0.1 1 10 100 400 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP053N08B_F102 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZqJC] 1.5 1 0.5 0.2 0.1 t1 0.05 *Notes: 0.02 t2 o 1. ZqJC(t) = 1.03 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZqJC(t) 0.01 Single pulse 0.001 -5 10 FDP053N08B_F102 Rev.C0 PDM 0.1 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform D G S Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP053N08B_F102 Rev.C0 6 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP053N08B_F102 Rev.C0 7 www.fairchildsemi.com FDP053N08B_F102 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 (F102: Trimmed Leads) Dimensions in Millimeters FDP053N08B_F102 Rev.C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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