PHILIPS BUW11AW Silicon diffused power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11W; BUW11AW
Silicon diffused power transistors
Product specification
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
e
APPLICATIONS
• Converters
2
• Inverters
• Switching regulators
1
• Motor control systems.
3
MBB008
1
PINNING
PIN
2
3
MBK117
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
collector-emitter peak voltage
VCESM
VCEO
MAX.
UNIT
VBE = 0
BUW11W
850
V
BUW11AW
1000
V
BUW11W
400
V
BUW11AW
450
V
1.5
V
collector-emitter voltage
open base
VCEsat
collector-emitter saturation voltage
see Figs 7 and 9
IC
collector current (DC)
see Figs 2 and 4
5
A
ICM
collector current (peak value)
see Fig 2
10
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.3
100
W
tf
fall time
resistive load; see Figs 11 and 12
0.8
µs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
thermal resistance from junction to mounting base
1997 Aug 14
1
VALUE
UNIT
1.25
K/W
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCESM
VCEO
ICsat
PARAMETER
collector-emitter peak voltage
CONDITIONS
MIN.
MAX.
UNIT
VBE = 0
BUW11W
−
850
V
BUW11AW
−
1000
V
BUW11W
−
400
V
BUW11AW
−
450
V
BUW11W
−
3
A
BUW11AW
−
2.5
A
−
5
A
collector-emitter voltage
open base
collector saturation current
IC
collector current (DC)
see Figs 2 and 4
ICM
collector current (peak value)
tp < 2 ms; see Fig 2
IB
base current (DC)
IBM
base current (peak value)
−
10
A
−
2
A
tp < 2 ms
−
4
A
Tmb ≤ 25 °C; see Fig.3
Ptot
total power dissipation
−
100
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VCEOsust
PARAMETER
CONDITIONS
collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
see Figs 5 and 6
BUW11W
BUW11AW
VCEsat
VBEsat
ICES
MIN.
TYP.
MAX.
UNIT
400
−
−
V
450
−
−
V
collector-emitter saturation voltage
BUW11W
IC = 3 A; IB = 600 mA; see
Figs 7 and 9
−
−
1.5
V
BUW11AW
IC = 2.5 A; IB = 500 mA; see
Figs 7 and 9
−
−
1.5
V
base-emitter saturation voltage
BUW11W
IC = 3 A; IB = 600 mA; see Fig.7
−
−
1.4
V
BUW11AW
IC = 2.5 A; IB = 500 mA; see Fig.7
−
−
1.4
V
VCE = VCESMmax; VBE = 0; note 1
−
−
1
mA
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
−
−
2
mA
mA
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
−
−
10
hFE
DC current gain
VCE = 5 V; IC = 5 mA; see Fig.10
10
18
35
VCE = 5 V; IC = 500 mA;
see Fig.10
10
20
35
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
SYMBOL
PARAMETER
BUW11W; BUW11AW
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times resistive load (see Figs 11 and 12)
ton
ts
tf
turn-on time
BUW11W
ICon = 3 A; IBon = −IBoff = 600 mA
−
−
1
µs
BUW11AW
ICon = 2.5 A; IBon = −IBoff = 500 mA −
−
1
µs
BUW11W
ICon = 3 A; IBon = −IBoff = 600 mA
−
−
4
µs
BUW11AW
ICon = 2.5 A; IBon = −IBoff = 500 mA −
−
4
µs
BUW11W
ICon = 3 A; IBon = −IBoff = 600 mA
−
−
0.8
µs
BUW11AW
ICon = 2.5 A; IBon = −IBoff = 500 mA −
−
0.8
µs
storage time
fall time
Switching times inductive load (see Figs 13 and 14)
ts
storage time
BUW11W
BUW11AW
tf
ICon = 3 A; IB = 600 mA
−
1.1
1.4
µs
ICon = 3 A; IB = 600 mA;
Tj = 100 °C
−
1.2
1.5
µs
ICon = 2.5 A; IB = 500 mA
−
1.1
1.4
µs
ICon = 2.5 A; IB = 500 mA;
Tj = 100 °C
−
1.2
1.5
µs
fall time
BUW11W
BUW11AW
ICon = 3 A; IB = 600 mA
−
80
150
ns
ICon = 3 A; IB = 600 mA;
Tj = 100 °C
−
140
300
ns
ICon = 2.5 A; IB = 500 mA
−
80
150
ns
ICon = 2.5 A; IB = 500 mA;
Tj = 100 °C
−
140
300
ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
handbook, full pagewidth
BUW11W; BUW11AW
MGB948
102
IC
(A)
10
ICM max
IC max
(1)
II
1
I
10−1
(2)
III
DC
10−2
10−3
10
BUW11W
BUW11AW
102
IV
103
VCE (V)
104
Tmb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms.
(1) Ptot max line.
(2) Second breakdown limits.
Fig.2 Forward bias SOAR.
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
MGD283
MGB895
5
120
handbook,
halfpage
handbook, halfpage
IC
(A)
Ptot max
(%)
4
80
3
2
40
1
(1)
(2)
0
0
0
50
100
Tmb (oC)
0
150
400
1200
800 V
CE (V)
(1) BUW11W.
(1) BUW11AW.
Fig.3 Power derating curve.
handbook, halfpage
Fig.4 Reverse bias SOAR.
handbook,IC
halfpage
+ 50 V
MGE239
(mA)
100 to 200 Ω
250
L
200
horizontal
oscilloscope
100
vertical
6V
30 to 60 Hz
Fig.5
1997 Aug 14
300 Ω
1Ω
0
MGE252
Test circuit for collector-emitter
sustaining voltage.
Fig.6
5
VCE (V)
min
VCEOsust
Oscilloscope display for collector-emitter
sustaining voltage.
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
MGB913
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
1.0
(1)
(2)
0.5
(3)
(4)
0
10−2
10−1
(1) VBE; Tj = 25 °C.
(2) VBE; Tj = 100 °C.
IC/IB = 5.
1
10
IC (A)
(3) VCE; Tj = 25 °C.
(4) VCE; Tj = 25 °C.
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
MGB910
1.6
handbook, full pagewidth
VBE
(V)
1.4
(1)
(2)
1.2
(3)
1.0
0.8
0
Tj = 25 °C.
(1) IC = 5 A.
0.25
0.5
0.75
1.0
1.25
(2) IC = 3 A.
(3) IC = 1.5 A.
Fig.8 Base-emitter voltage as a function of base current; typical values.
1997 Aug 14
6
IB (A)
1.5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
MGB873
10
(1)
(2)
MBC095
2
10halfpage
handbook,
handbook, halfpage
(3)
VCEsat
hFE
(V)
VCE = 5 V
1V
1
10
10−1
10−2
10−1
1
IB (A)
1
10−2
10
10−1
1
102
10
IC (A)
(1) IC = 1.5 A.
(2) IC = 3 A.
(3) IC = 5 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9
Collector-emitter saturation voltage as a
function of base current; typical values.
Fig.10 DC current gain; typical values.
handbook, halfpage
MBB730
tr
−IB on
90%
−IB
VCC
handbook, halfpage
10%
t
RL
VIM
−IB off
RB
0
D.U.T.
−IC on
90%
tp
T
MGE244
−IC
10%
ton
tf
toff
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.12 Switching time waveforms with
resistive load.
Fig.11 Test circuit resistive load.
1997 Aug 14
ts
7
t
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, halfpage
tr
IB on
90%
IB
10%
VCC
handbook, halfpage
t
LC
+IB
−IB off
VCL
LB
IC on
90%
D.U.T.
−VBE
IC
MGE246
10%
ts
toff
t
tf
MGE238
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.14 Switching time waveforms with
inductive load.
Fig.13 Test circuit inductive load.
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
α
E
P
A
A1
β
q
S
R
D
Y
L1(1)
Q
b2
L
1
2
3
c
w M
b
b1
e
e
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D
E
e
L
L1
P
Q
q
R
S
w
Y
α
β
mm
5.3
4.7
1.9
1.7
1.2
0.9
2.2
1.8
3.2
2.8
0.9
0.6
21
20
16
15
5.45
16
15
4.0
3.6
3.7
3.3
2.6
2.4
5.3
3.5
3.3
7.5
7.1
0.4
15.7
15.3
6°
4°
17°
13°
Note
1. Terminals are uncontrolled within zone L1.
OUTLINE
VERSION
SOT429
1997 Aug 14
REFERENCES
IEC
JEDEC
EIAJ
TO-247
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 14
10
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 14
Document order number:
9397 750 02727