IDT F1423 Tx differential input rf amplifier Datasheet

F1423
Datasheet
TX Differential Input RF Amplifier
600 MHz to 3000 MHz
GENERAL DESCRIPTION
FEATURES
The F1423 is a 600 MHz to 3000 MHz TX differential
input / single-ended output RF amplifier used in
transmitter applications.
This device is packaged in a 4mm x 4mm, 24-pin Thin
QFN with 50 ohm differential RF input and 50 ohm
single ended RF output impedances for ease of
integration into the signal-path.
•
•
•
•
•
•
•
•
•
•
•
COMPETITIVE ADVANTAGE
•
•
The F1423 TX Amp provides 13.1 dB gain with
+41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz.
This device uses a single 5 V supply and 120 mA of ICC.
In typical Base Stations, RF Amplifiers are used in the
TX traffic paths to drive the transmit power amplifier.
The F1423 TX Amplifier offers very high reliability due
to its construction using silicon die in a QFN package.
The F1423 includes a broadband differential input to
accept AC-coupled signals directly from a balanced
modulator or RF DAC architecture.
Broadband 600 MHz – 3000 MHz
13.1 dB typical gain @ 2000 MHz
5.1 dB NF @ 2000 MHz
+41.8 dBm OIP3 @ 2000 MHz
+21.5 dBm output P1dB @ 2000 MHz
Single 5 V supply voltage
ICC = 120 mA
Up to +105 °C TCASE operating temperature
50 Ω differential input impedance
50 Ω single ended output impedance
Positive gain slope for board loss
compensation
Standby mode for power savings
4 mm x 4 mm, 24-pin TQFN package
FUNCTIONAL BLOCK DIAGRAM
RFOUT
RFIN
APPLICATIONS
•
•
•
•
•
•
•
•
Multi-mode, Multi-carrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
Public Safety Infrastructure
STBY
BANDSEL
ORDERING INFORMATION
Tape &
Reel
F1423NBGI8
RF Product Line
F1423, Rev O 11/6/2015
1
Green
© 2015 Integrated Device Technology, Inc.
F1423
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Units
VCC to GND
VCC
-0.3
+5.5
V
STBY, Band_Sel
VCntl
-0.3
VCC + 0.25
V
RBIAS1
IRB1
+1.5
mA
IRB2
+0.8
mA
RBIAS2
1
VRFin
-0.02
+0.02
V
RFIN+, RFIN-, Current1
IRFin
-5
+5
mA
VRFout
VCC - 0.15
VCC + 0.15
V
RFIN+, RFIN-, Voltage
RFOUT externally applied DC voltage
RF Differential Input Power
(applied for 24 hours maximum)
Pin
+22
dBm
Continuous Power Dissipation
Pdiss
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tst
150
°C
260
°C
-65
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2014)
Class 2
(2000 V)
ElectroStatic Discharge – CDM
(JESD 22-C101F)
Class C3
(1000 V)
Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground.
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
40 °C/W
θJC (Junction – Case) [The Case is defined as the exposed paddle]
4 °C/W
Moisture Sensitivity Rating (Per J-STD-020)
MSL1
Zero-DistortionTM, TX Amplifier
2
Rev O 11/6/2015
F1423
F1423 RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature Range
Symbol
VCC
TCASE
Conditions
Typ
Max
Units
All VCC pins
4.75
5.25
V
Case Temperature
-40
+105
°C
600
1
RF Frequency Range
FRF
Operating Range
RF Source Impedance
ZRFI
Differential
RF Load Impedance
ZRFO
Single Ended
RF Band Designation
RF Frequency Range
Min
3000
MHz
50
Ω
50
Ω
2
FRF_LB
Low-band
600
1100
FRF_MB
Mid-band
1400
2100
FRF_HB
High-band
2100
30001
FRF_BB
Broad-band
600
30001
MHz
Note 1: Though device linearity is specified over the range from 700 MHz to 2700 MHz, gain flatness up to 3000 MHz
is specified in the high-band and broadband tables to account for extended DPD bandwidth requirements.
Note 2: To optimize RF performance, a different output match will be used for each of the 4 RF bands listed (see
Table 2). In addition, different value amplifier bias resistors will be used to optimize performance in each of
the 4 bands.
Rev O 11/6/2015
3
Zero-DistortionTM, TX Amplifier
F1423
F1423 SPECIFICATION - GENERAL
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C.
Parameter
Logic Input High
Logic Input Low
Logic Current
Supply Current3
Standby Current
Symbol
VIH
VIL
ISTBY
IBAND
ICC_LB
ICC_MB
ICC_HB
ICC_BB
ICC_STBY
Power ON switching time
TON
Power OFF switching time
TOFF
Condition
Min
Typ
Max
1.1
STBY pin
Band_Sel pin
Low-band bias setting
Mid-band bias setting
High-band bias setting
Broad-band bias setting
STBY = 5V
50% STBY to RF output
settled to within ±0.5dB
50% STBY to DC standby
current settled to within
±2mA of final ICC value
0.63
+10
+10
-10
-10
103
120
120
120
0.8
Units
V
µA
mA
135 1
1.0
mA
1
µs
1
µs
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Use external resistors to set amplifier bias currents to optimize device linearity. See Table 2.
Zero-DistortionTM, TX Amplifier
4
Rev O 11/6/2015
F1423
F1423 SPECIFICATION – LOW-BAND
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 700 MHz, Pout = +7 dBm, R8 =2.1 kΩ, R9 =9.1 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = open, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return Loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure3
Output Third Order
Intercept Point3
Output 1dB Compression3
Symbol
RFINRL_LB
Condition
Min
Typ
17
RFOUTRL_LB
CMRRLB
700 MHz to 1100 MHz
12.0
GLB
GFLAT_LB
GRIPPLE_LB
NFLB
OIP3LB
1
Any 400 MHz BW from
700 MHz to 1100 MHz
In any 20 MHz range over
RF Band
Max
12.8
dB
20.7
dB
12.6
13.2
OP1dBLB
dB
0.4
dB
±0.04
dB
4.5
Tcase = +105 °C
Pout = +4 dBm/tone
5 MHz tone separation
Units
dB
dB
5.4
392
42.5
dBm
20
21.1
dBm
F1423 SPECIFICATION – MID-BAND
See F1423 Typical Application Circuit Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2000 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure3
Output Third Order
Intercept Point3
Output 1dB Compression3
Symbol
RFINRL_MB
Condition
Min
RFOUTRL_MB
CMRRMB
GRIPPLE_MB
NFMB
OIP3MB
Max
16.5
1400 MHz to 2100 MHz
Any 400MHz BW from
1400 MHz to 2100 MHz
In any 20 MHz range over
RF Band
13.1
dB
13.7
OP1dBMB
dB
0.17
dB
±0.01
dB
5.1
Tcase = +105 °C
Pout = +4 dBm/tone
5MHz tone separation
Units
dB
dB
19.0
12.5 1
GMB
GFLAT_MB
Typ
15
5.8
dB
38.82
41.8
dBm
20.3
21.5
dBm
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Rev O 11/6/2015
5
Zero-DistortionTM, TX Amplifier
F1423
F1423 Specification – High-Band
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2700 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 6 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKit trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Gain Ripple
Noise Figure3
Output Third Order
Intercept Point3
Output 1dB Compression3
Symbol
RFINRL_HB
Condition
Min
Typ
15.5
RFOUTRL_HB
CMRRHB
2100 MHz to 3000 MHz
12.4
GHB
GFLAT_HB
GRIPPLE_HB
NFHB
OIP3HB
1
Any 400 MHz BW from
2100 MHz to 3000 MHz
In any 20 MHz range over
RF Band
Max
Units
dB
20
dB
18.5
dB
13.1
13.9
dB
0.23
dB
±0.015
dB
6.0
dB
Tcase = +105 °C
6.6
Pout = +4 dBm/tone
5MHz tone separation
37.3
dBm
20.6
dBm
20.02
OP1dBHB
F1423 Specification – Broad-Band
See F1423 Typical Application Circuit. Unless otherwise stated, specifications apply when operated as a TX RF
Amplifier, VCC = +5.0 V, TC = +25 °C, FRF = 2200 MHz, Pout = +7 dBm, R8 =2.4 kΩ, R9 =60.4 kΩ, C1 = 9 pF,
Rsource = 50 Ω differential, Rload = 50 Ω single-ended, Band_Sel = GND, EVKIT trace connector and transformer
losses are de-embedded.
Parameter
RF Input Return loss
RF Output Return Loss
Common Mode Rejection
Gain
Gain Flatness
Symbol
RFINRL_BB
CMRRBB
Typ
15.0
700 MHz to 3000 MHz
12.6
GBB
GFLAT_BB
GRIPPLE_BB
Gain Slope
GSLOPE_BB
Output Third Order
Intercept Point3
Output 1dB Compression3
Min
RFOUTRL_BB
Gain Ripple
Noise Figure3
Condition
NFBB
OIP3BB
1
Any 400 MHz BW from
700 MHz to 3000 MHz
In any 20 MHz range over
400 MHz BW
Max
Units
dB
18.5
dB
18.5
dB
13.2
13.8
dB
0.4
dB
±0.04
dB
±0.002
dB/MHz
5.2
dB
Tcase = +105 °C
5.8
Pout = +4 dBm/tone
5 MHz tone separation
41.4
dBm
21.4
dBm
20.52
OP1dBBB
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: Measured using external 1:1 transformer at the RF input.
Zero-DistortionTM, TX Amplifier
6
Rev O 11/6/2015
F1423
Table1: STBY Truth Table
Parameter
STBY
Level
Logic Low or Open Circuit
Logic High
Function
Powered On
Powered Off
Table2: Component Settings for Optimized Linearity Performance per RF band
Band
Low - Band
Mid - Band
High - Band
Broad - Band
Frequency Range
(MHz)
600 - 1100
1400 - 2100
2100 - 3000
700 - 3000
Band_Sel
(Pin 11)
Open
GND
GND
GND
Pin 14 to GND
(kΩ)
2.1
2.4
2.4
2.4
Pin 15 to GND
(kΩ)
9.1
60.4
60.4
60.4
C1
(pF)
9
9
6
9
ICC
(mA)
104
120
120
120
TYPICAL OPERATING CONDITIONS (TOC)
Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply.
•
•
•
•
•
•
•
•
•
•
•
Vcc= 5.0 V
Tcase = 25 °C (All temperatures are referenced to the exposed paddle).
ZS = 50 Ohms Differential
ZL = 50 Ohms Single Ended
Board configured as defined in Table 2 for each band.
Pout = 4 dBm / Tone
5 MHz Tone Spacing
EVKIT traces, connectors, and transformer losses are de-embedded.
S-parameters (S11, S21, S12, and S22) measured using a de-embedded Differential Board EVKit
and the inputs are mathematically combined using an ideal 1:1 (50 Ω : 50 Ω) transformer to
produce the 2 port S-parameters.
Amplitude and phase imbalances measures RFIN+ to RFOUT and compares to RFIN- to RFOUT.
Phase imbalance is the deviation from an ideal 180 degrees.
OIP3, Output P1dB and Noise Figure measured using a Transformer Board EVKit.
Note: The use of the external transformer T1 is included for simple 2 port evaluation purposes.
At some frequencies the external transformer interacts with the on-chip balun affecting the gain and noise
figure flatness responses. These interactions have been removed from the noise figure TOCs.
Rev O 11/6/2015
7
Zero-DistortionTM, TX Amplifier
F1423
TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, BROAD-BAND BIAS](-1-)
Input Match vs. Vcc and TCASE
RF Gain vs. Vcc and TCASE
0
15
4.75V, -40C
4.75V, 25C
4.75V, 105C
14.5
14
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-10
Input Match (dB)
13.5
Gain (dB)
4.75V, -40C
4.75V, 25C
4.75V, 105C
-5
13
12.5
12
11.5
11
10
-15
-20
-25
-30
-40
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
0.9
1.2
Frequency (GHz)
5.00V, -40C
5.00V, 25C
5.00V, 105C
2.1
2.4
2.7
3
-12
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
-14
Reverse Gain (dB)
-5
1.8
Reverse Gain vs. Vcc and TCASE
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
1.5
Frequency (GHz)
Output Match vs. Vcc and TCASE
Output Match (dB)
5.25V, -40C
5.25V, 25C
5.25V, 105C
-35
10.5
-10
-15
-20
-25
-16
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-18
-20
-22
-24
-26
-30
-28
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
0.9
1.2
Frequency (GHz)
1.5
1.8
2.1
2.4
2.7
3
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
-40C
25C
105C
1
ZS = 25 Ohm / port
ZL = 50 Ohm
-40C
25C
105C
15
Phase Imbalance (deg)
Amplitude Imbalance (dB)
5.00V, -40C
5.00V, 25C
5.00V, 105C
0.5
0
-0.5
-1
10
ZS = 25 Ohm / port
ZL = 50 Ohm
5
0
-5
-10
-15
-1.5
-20
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
Frequency (GHz)
Zero-DistortionTM, TX Amplifier
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
Frequency (GHz)
8
Rev O 11/6/2015
F1423
TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, BROAD-BAND BIAS](-2-)
OIP3 vs. Vcc and TCASE
OIP3 vs. Pout Level
60
60
4.75V, -40C
4.75V, 25C
4.75V, 105C
55
50
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
50
45
45
OIP3 (dBm)
OIP3 (dBm)
0dBm/tone
2dBm/tone
4dBm/tone
55
40
35
30
40
35
30
25
25
20
20
15
15
10
10
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
0.9
1.2
Frequency (GHz)
1.8
2.1
2.4
2.7
3
Frequency (GHz)
Output P1dB vs. Vcc and TCASE
Noise Figure vs. Vcc and TCASE
24
8
4.75V, -40C
4.75V, 25C
4.75V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
7.5
Noise Figure (dB)
23
OP1dB (dBm)
1.5
22
21
20
19
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
7
6.5
6
5.5
5
4.5
18
4
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0.6
Frequency (GHz)
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
Frequency (GHz)
Icc vs. Vcc and TCASE
140
-40C
25C
105C
135
Icc (mA)
130
125
120
115
110
105
100
4.75
5
5.25
Vcc (Volts)
Rev O 11/6/2015
9
Zero-DistortionTM, TX Amplifier
F1423
TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, LOW-BAND BIAS](-3-)
RF Gain vs. Vcc and TCASE
15
4.75V, -40C
4.75V, 25C
4.75V, 105C
14.5
14
Input Match vs. Vcc and TCASE
5.00V, -40C
5.00V, 25C
5.00V, 105C
0
5.25V, -40C
5.25V, 25C
5.25V, 105C
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-10
Input Match (dB)
13.5
Gain (dB)
4.75V, -40C
4.75V, 25C
4.75V, 105C
-5
13
12.5
12
11.5
-15
-20
-25
-30
11
-35
10.5
-40
10
0.6
0.7
0.8
0.9
1
1.1
1.2
0.6
1.3
0.7
0.8
Output Match vs. Vcc and TCASE
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
1.1
1.2
1.3
-12
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
-14
-10
-15
-20
-25
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-16
-18
-20
-22
-24
-26
-30
-28
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0.6
0.7
0.8
Frequency (GHz)
0.9
1
1.1
1.2
1.3
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
-40C
25C
105C
1
ZS = 25 Ohm / port
ZL = 50 Ohm
-40C
25C
105C
15
Phase Imbalance (deg)
Amplitude Imbalance (dB)
1
Reverse Gain vs. Vcc and TCASE
Reverse Gain (dB)
Output Match (dB)
-5
5.00V, -40C
5.00V, 25C
5.00V, 105C
0.9
Frequency (GHz)
Frequency (GHz)
0.5
0
-0.5
-1
10
ZS = 25 Ohm / port
ZL = 50 Ohm
5
0
-5
-10
-15
-20
-1.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0.6
1.3
Zero-DistortionTM, TX Amplifier
0.7
0.8
0.9
1
1.1
1.2
1.3
Frequency (GHz)
Frequency (GHz)
10
Rev O 11/6/2015
F1423
TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, LOW-BAND BIAS](-4-)
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
24
60
4.75V, -40C
4.75V, 25C
4.75V, 105C
55
5.25V, -40C
5.25V, 25C
5.25V, 105C
45
OIP3 (dBm)
4.75V, -40C
4.75V, 25C
4.75V, 105C
23
Output P1dB (dBm)
50
5.00V, -40C
5.00V, 25C
5.00V, 105C
40
35
30
25
20
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
22
21
20
19
15
18
10
0.6
0.7
0.8
0.9
1
1.1
1.2
0.6
1.3
0.7
0.8
125
7
5.25V, -40C
5.25V, 25C
5.25V, 105C
1.1
1.2
1.3
-40C
25C
105C
120
6
115
5.5
110
Icc (mA)
Noise Figure (dB)
6.5
5.00V, -40C
5.00V, 25C
5.00V, 105C
1
Icc vs. Vcc and TCASE
Noise Figure vs. Vcc and TCASE
4.75V, -40C
4.75V, 25C
4.75V, 105C
0.9
Frequency (GHz)
Frequency (GHz)
5
4.5
105
100
4
95
3.5
90
85
3
0.6
0.7
0.8
0.9
1
1.1
1.2
4.75
1.3
Rev O 11/6/2015
5
5.25
Vcc (Volts)
Frequency (GHz)
11
Zero-DistortionTM, TX Amplifier
F1423
TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, MID-BAND BIAS](-5-)
RF Gain vs. Vcc and TCASE
14.5
4.75V, -40C
4.75V, 25C
4.75V, 105C
14
Input Match vs. Vcc and TCASE
5.00V, -40C
5.00V, 25C
5.00V, 105C
0
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
-5
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
Input Match (dB)
Gain (dB)
13.5
13
12.5
12
11.5
-10
-15
-20
-25
11
-30
10.5
1.4
1.5
1.6
1.7
1.8
1.9
2
1.4
2.1
1.5
1.6
Output Match vs. Vcc and TCASE
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
1.9
2
2.1
-12
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
-14
-10
-15
-20
-25
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-16
-18
-20
-22
-24
-26
-30
-28
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
1.4
1.5
1.6
Frequency (GHz)
1.7
1.8
1.9
2
2.1
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
20
1.5
-40C
25C
105C
1
ZS = 25 Ohm / port
ZL = 50 Ohm
-40C
25C
105C
15
Phase Imbalance (deg)
Amplitude Imbalance (dB)
1.8
Reverse Gain vs. Vcc and TCASE
Reverse Gain (dB)
Output Match (dB)
-5
5.00V, -40C
5.00V, 25C
5.00V, 105C
1.7
Frequency (GHz)
Frequency (GHz)
0.5
0
-0.5
-1
10
ZS = 25 Ohm / port
ZL = 50 Ohm
5
0
-5
-10
-15
-20
-1.5
1.4
1.5
1.6
1.7
1.8
1.9
2
1.4
2.1
Zero-DistortionTM, TX Amplifier
1.5
1.6
1.7
1.8
1.9
2
2.1
Frequency (GHz)
Frequency (GHz)
12
Rev O 11/6/2015
F1423
TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, MID-BAND BIAS](-6-)
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
24
60
4.75V, -40C
4.75V, 25C
4.75V, 105C
55
50
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
OP1dB (dBm)
45
OIP3 (dBm)
4.75V, -40C
4.75V, 25C
4.75V, 105C
23
40
35
30
25
20
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
22
21
20
19
15
10
18
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
1.4
1.5
1.6
Frequency (GHz)
Noise Figure vs. Vcc and TCASE
4.75V, -40C
4.75V, 25C
4.75V, 105C
140
5.25V, -40C
5.25V, 25C
5.25V, 105C
1.9
2
2.1
-40C
25C
105C
135
7
130
6.5
125
Icc (mA)
Noise Figure (dB)
5.00V, -40C
5.00V, 25C
5.00V, 105C
1.8
Icc vs. Vcc and TCASE
8
7.5
1.7
Frequency (GHz)
6
5.5
120
115
5
110
4.5
105
4
100
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
4.75
Frequency (GHz)
Rev O 11/6/2015
5
5.25
Vcc (Volts)
13
Zero-DistortionTM, TX Amplifier
F1423
TOCS [DIFFERENTIAL BOARD S-PARS, AMPLITUDE AND PHASE IMBALANCE, HIGH-BAND BIAS](-7-)
RF Gain vs. Vcc and TCASE
15
4.75V, -40C
4.75V, 25C
4.75V, 105C
14.5
14
Input Match vs. Vcc and TCASE
5.00V, -40C
5.00V, 25C
5.00V, 105C
0
5.25V, -40C
5.25V, 25C
5.25V, 105C
Input Match (dB)
13
12.5
12
11.5
11
-15
-20
-25
-30
-40
10
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2
3
2.1
2.2
2.3
Output Match vs. Vcc and TCASE
0
4.75V, -40C
4.75V, 25C
4.75V, 105C
2.5
2.6
2.7
2.8
2.9
3
Reverse Gain vs. Vcc and TCASE
-12
5.25V, -40C
5.25V, 25C
5.25V, 105C
4.75V, -40C
4.75V, 25C
4.75V, 105C
-14
Reverse Gain (dB)
-5
5.00V, -40C
5.00V, 25C
5.00V, 105C
2.4
Frequency (GHz)
Frequency (GHz)
Output Match (dB)
5.25V, -40C
5.25V, 25C
5.25V, 105C
-35
10.5
-10
-15
-20
-25
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
-16
-18
-20
-22
-24
-26
-30
-28
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2
2.1
2.2
2.3
Frequency (GHz)
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency (GHz)
Amplitude Imbalance vs. TCASE
Phase Imbalance vs. TCASE
1.5
20
-40C
25C
105C
1
ZS = 25 Ohm / port
ZL = 50 Ohm
-40C
25C
105C
15
Phase Imbalance (deg)
Amplitude Imbalance (dB)
5.00V, -40C
5.00V, 25C
5.00V, 105C
-10
13.5
Gain (dB)
4.75V, -40C
4.75V, 25C
4.75V, 105C
-5
0.5
0
-0.5
-1
10
ZS = 25 Ohm / port
ZL = 50 Ohm
5
0
-5
-10
-15
-20
-1.5
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2
3
Zero-DistortionTM, TX Amplifier
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Frequency (GHz)
Frequency (GHz)
14
Rev O 11/6/2015
F1423
TOCS [TRANSFORMER BOARD, OIP3, P1dB, NOISE FIGURE, ICC, ACLR, HIGH-BAND BIAS](-8-)
OIP3 vs. Vcc and TCASE
Output P1dB vs. Vcc and TCASE
24
60
4.75V, -40C
4.75V, 25C
4.75V, 105C
55
50
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
OP1dB (dBm)
45
OIP3 (dBm)
4.75V, -40C
4.75V, 25C
4.75V, 105C
23
40
35
30
25
20
5.00V, -40C
5.00V, 25C
5.00V, 105C
5.25V, -40C
5.25V, 25C
5.25V, 105C
22
21
20
19
15
10
18
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2
2.1
2.2
2.3
Frequency (GHz)
Noise Figure vs. Vcc and TCASE
4.75V, -40C
4.75V, 25C
4.75V, 105C
140
5.25V, -40C
5.25V, 25C
5.25V, 105C
2.6
2.7
2.8
2.9
3
-40C
25C
105C
135
7
130
6.5
125
Icc (mA)
Noise Figure (dB)
5.00V, -40C
5.00V, 25C
5.00V, 105C
6
5.5
120
115
5
110
4.5
105
4
100
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
4.75
5
Frequency (GHz)
5.25
Vcc (Volts)
WCDMA ACLR vs. Pout (PAR = 4.3 dB)
WCDMA ACLR vs. Pout (PAR = 11.4 dB)
-20
-20
ACLR1+
-30
ACLR1-
ACLR2+
ACLR1+
ACLR2-30
Measurement at 2.7 GHz
1 DPCH, PAR = 4.3 dB
Specified Pout = 7 dBm
-40
ACLR (dBc)
ACLR (dBc)
2.5
Icc vs. Vcc and TCASE
8
7.5
2.4
Frequency (GHz)
-50
-60
-70
ACLR1-
ACLR2+
ACLR2-
Measurement at 2.7 GHz
64 DPCH, PAR = 11.4 dB
Specified Pout = 7 dBm
-40
-50
-60
-70
-80
-80
2
3
4
5
6
7
8
9
10
11
12
2
Average WCDMA POUT (dBm)
Rev O 11/6/2015
3
4
5
6
7
8
9
10
11
12
Average WCDMA POUT (dBm)
15
Zero-DistortionTM, TX Amplifier
F1423
PACKAGE DRAWING
(4 mm x 4 mm 24-pin TQFN), NBG24
NOTE: THE F1423 USES THE P2 EXPOSED PADDLE DIMENSIONS NOTED BELOW
Zero-DistortionTM, TX Amplifier
16
Rev O 11/6/2015
F1423
LAND PATTERN DIMENSION
Land Pattern to Support 2.6 mm x 2.6 mm Exposed Paddle Version
(See Version P2 of Package Drawing)
Rev O 11/6/2015
17
Zero-DistortionTM, TX Amplifier
F1423
NC
GND
NC
NC
NC
NC
24
23
22
21
20
19
PIN DIAGRAM
RFIN+
1
18
GND
GND
2
17
RFOUT
RFIN-
3
16
GND
GND
4
15
RBIAS2
14
RBIAS1
13
STBY
Control
Circuit
NC
5
E.P.
9
10
11
GND
VCC
Band_Sel
12
8
NC
GND
7
6
NC
NC
PIN DESCRIPTION
Pin
Name
1
RFIN+
2, 4, 9, 12, 16,
18, 23
GND
3
RFIN-
5, 6, 7, 8, 19,
20, 21, 22, 24
NC
10
VCC
11
Band_Sel
13
STBY
14
15
RBIAS1
RBIAS2
17
RFOUT
— EP
Zero-DistortionTM, TX Amplifier
Function
Differential Input +. Pin looks like a DC short to ground. Must use
external DC block if DC is present on RF line.
Ground these pins. These pins are internally connected to the
exposed paddle.
Differential Input -. Pin looks like a DC short to ground. Must use
external DC block if DC is present on RF line.
No internal connection. OK to connect to GND, OK to connect to
VCC. Application circuit ties these pins to ground.
5 V Power Supply. Connect to VCC and use bypass capacitors as
close to the pin as possible.
Leave pin open circuited for low-band select and connect 0 Ω resistor
to GND for high-band select. Internally this pin has a 1.5 MΩ pull-up
resistor that connects to VCC.
Standby (High= device power OFF, Low/Open = device power ON).
Internally this pin has a 1 MΩ pull-down resistor that is connected to
GND.
Connect external resistor to GND. Use value in Table 2.
Connect external resistor to GND. Use value in Table 2.
RF output. Must use external DC block as close to the pin as
possible.
Exposed Pad. Internally connected to GND. Solder this exposed pad
to a PCB pad that uses multiple ground vias to provide heat transfer
out of the device into the PCB ground planes. These multiple ground
vias are also required to achieve the noted RF performance.
18
Rev O 11/6/2015
F1423
APPLICATIONS INFORMATION
The F1423 has been optimized for use in high performance RF applications from 600 MHz to 3000 MHz.
STBY
The STBY control pin allows for power saving when the device is not in use. Setting the STBY pin to a logic
low, or leaving the pin open, will put the device in normal operation mode. The STBY pin has an internal
1 Meg ohm resistor to ground. Applying a logic high to this pin will put the part in standby mode. Voltage
should not be applied to the STBY pin without VCC present.
Band_Sel
The Band_Sel control pin can be used to adjust the current in the device for Mid Band, High Band, and Wide
Band frequency applications. This is done by grounding the Band_Sel pin. Internally there is a 1.5 Meg ohm
pull-up resistor. Voltage should not be applied to the Band_Sel pin without VCC present.
RBias1 and RBias2
RBIAS1 (pin 14) and RBIAS2 (pin 15) use a single external resistor to ground on each pin to set the DC
current in the device and to optimize the linearity performance of the amplifier stage. The resistor values in
Table 2 can be used as a guide for the RF band of interest. By decreasing the resistor value to ground on the
RBIAS1 pin will increase the DC current in the amplifier stage. The resistor to ground on RBIAS2 is used to
optimize the linearity performance in conjunction with the resistor on RBIAS1.
Amplifier Stability
To ensure unconditional stability the value of R1 should be set to 510 Ohms. This will reduce the RF Gain,
OIP3, and OP1dB by approx 0.4 dB. Additionally, shunt resistors to ground of approximately 1k ohm should be
connected from pin 1 to ground and pin 3 to ground. This will stabilize the circuit due to common mode
source impedances. The installed 1k resistor will add 0.1 dB degradation to the Gain and Noise Figure. The
1k ohm will also dampen any common mode amplitude and phase interactions from the differential source
impedance and the F1423 differential input impedance.
Power Supplies
A common VCC power supply should be used for all pins requiring DC power. All supply pins should be
bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure
and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should
have a slew rate smaller than 1 V / 20 µs. In addition, all control pins should remain at 0 V (+/-0.3 V) while the
supply voltage ramps or while it returns to zero.
Control Pin Interface
19
20
21
22
23
24
If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot,
ringing, etc., the following circuit at the input of each control pin is recommended. This applies to all control
pins 11 and 13. Note the recommended resistor and capacitor values do not necessarily match the EV kit BOM
for the case of poor control signal integrity.
1
18
2
17
3
16
F1423
Exposed Pad (GND)
4
15
5
14
6
13
5k ohm
STBY
12
11
10
9
8
7
2pF
5k ohm
Band_Sel
2pF
Rev O 11/6/2015
19
Zero-DistortionTM, TX Amplifier
F1423
EVKIT PICTURE (DIFFERENTIAL BOARD)
EVKIT PICTURE (TRANSFORMER BOARD)
Zero-DistortionTM, TX Amplifier
20
Rev O 11/6/2015
F1423
EVKIT / APPLICATIONS CIRCUIT (DIFFERENTIAL BOARD)
EVKit / Applications Circuit (Transformer Board)
Rev O 11/6/2015
21
Zero-DistortionTM, TX Amplifier
F1423
EVKIT BOM (DIFFERENTIAL BOARD)
Part Ref
QTY
DESCRIPTION
Mfr. Part #
Mfr.
C1
1
9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402)
GRM1555C1H9R0C
Murata
C2
1
C3
1
1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402)
GRM1555C1H102J
Murata
0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402)
GRM155R71C104K
Murata
C4
1
10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603)
GRM188R60J106M
Murata
ERJ-2GE0R00X
Panasonic
R1
1
Not installed (0402)
R2, R3, R4
3
0 Ω Resistor, 1/10W, (0402)
R5, R6
0
Not installed
R7
1
2.1k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF2101X
Panasonic
R8
1
2.4k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF2401X
Panasonic
R9
1
60.4k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF6042X
Panasonic
R10
1
9.1k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF9101X
Panasonic
R11
1
Not installed
R12
1
Not installed
J1, J2, J3, J9
4
SMA_END_LAUNCH (small)
142-0711-821
Emerson Johnson
J4, J5, J8
3
CONN HEADER VERT 2 x 1 Gold
961102-6404-AR
3M
J6, J7
2
CONN HEADER VERT 2 x 4 Gold
67997-108HLF
FCI
U1
1
RF Amplifier
F1423NBGI
IDT
1
Printed Circuit Board (3 port)
Zero-DistortionTM, TX Amplifier
F1423 EVKIT (3 port)
22
Rev O 11/6/2015
F1423
EVKIT BOM (TRANSFORMER BOARD)
Part Ref
QTY
Mfr. Part #
Mfr.
C1
1
9.0 pF ±0.25 pF, 50 V, C0G, Ceramic Capacitor (0402)
DESCRIPTION
GRM1555C1H9R0C
Murata
C2
1
1000 pF ±5%, 50 V, C0G, Ceramic Capacitor (0402)
GRM1555C1H102J
Murata
C3
1
0.1 µF ±10%, 16 V, X7R, Ceramic Capacitor (0402)
GRM155R71C104K
Murata
GRM188R60J106M
Murata
ERJ-2GE0R00X
Panasonic
C4
1
10 µF ±20%, 6.3 V, X5R, Ceramic Capacitor (0603)
R1
1
Not installed (0402)
R2, R3, R4
3
0 Ω Resistor, 1/10W, (0402)
R5, R6
0
Not installed
R7
1
2.1k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF2101X
Panasonic
R8
1
2.4k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF2401X
Panasonic
R9
1
60.4k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF6042X
Panasonic
R10
1
9.1k Ω ±1%, Resistor, 1/10W, (0402)
ERJ-2RKF9101X
Panasonic
R11
1
Not installed
ERJ-2RKF5100X
Panasonic
TC1-1-43+
Mini Circuits
R12
1
Not installed
R13, R14
2
510 Ω ±1%, Resistor, 1/10W, (0402) (Note 1)
T1
1
1:1 wideband transformer
J1, J3, J9
3
SMA_END_LAUNCH (small)
142-0711-821
Emerson Johnson
J4, J5, J8
3
CONN HEADER VERT 2 x 1 Gold
961102-6404-AR
3M
J6, J7
2
CONN HEADER VERT 2 x 4 Gold
67997-108HLF
FCI
U1
1
RF Amplifier
F1423NBGI
IDT
1
Printed Circuit Board (Transformer)
F1423 EVKIT XFMR
Note 1: When using an external transformer for evaluation, a common mode resonance interaction can occur with the
on-chip balun. Resistors R13 and R14 will dampen the resonance but affects the Gain and NF by approx 0.2dB.
TOP MARKINGS
Part Number
IDTF14
23NBGI
Z512ACG
Assembler
Code
ASM
Test
Step
Rev O 11/6/2015
Date Code [YWW]
(Week 12 of 2015)
23
Zero-DistortionTM, TX Amplifier
F1423
EVKIT OPERATION
The F1423 EVkits (single ended and differential) have a number of control features available.
STBY (2 pin Header J5)
Two-pin header J5 can be used to set the part for operational or standby mode. Leaving the two J5
pins unconnected will place it in the operational mode. Connecting the two J5 pins together will pull
up the STBY pin to Vcc through R4 and place the part into the standby mode.
Band_Sel (2 pin Header J4)
Two-pin header J4 can be used to set the part for best operational performance in different RF bands.
Based on Table 2 above the Low-Band performance is best with these two J4 pins left open while the
other bands typically have these two pins shorted together.
RF Band Biasing (RBIAS1, RBIAS2, Band_Sel)
Below are 4 settings showing the recommended J4, J7, and J8 jumper connections for best linearity
performance in the different RF bands. The jumpers (shown in red below) select the RBIAS1 and
RBIAS2 resistor values along with the Band_Sel setting (see Table 2 above). Never have two shunts
installed at the same time on header J7 since this may produce excessive bias current and damage
the part.
Broad-Band
Low-Band
Mid-Band
Zero-DistortionTM, TX Amplifier
High-Band
24
Rev O 11/6/2015
F1423
REVISION HISTORY SHEET
Rev
Date
O
2015- Nov-6
Rev O 11/6/2015
Page
Description of Change
Initial Release
25
Zero-DistortionTM, TX Amplifier
F1423
Corporate Headquarters
6024 Silver Creek Valley Road
San Jose, CA 95138 USA
Sales
1-800-345-7015 or 408-284-8200
Fax: 408-284-2775
www.idt.com
Tech Support
http://www.idt.com/support/technical-support
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion.
Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer
products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for
any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any
license under intellectual property rights of IDT or any third parties.
IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can
be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are
the property of IDT or their respective third party owners.
Copyright ©2015. Integrated Device Technology, Inc. All rights reserved.
Zero-DistortionTM, TX Amplifier
26
Rev O 11/6/2015