AP4410GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Fast Switching D D D ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free SO-8 S BVDSS 30V RDS(ON) 13.5mΩ ID 10A S S Description AP4410 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D D G G S S The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 Rating Units 30 V +25 V 10 A 8 A 50 A IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient3 50 ℃/W Data and specifications subject to change without notice 1 201501084 AP4410GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.037 - V/℃ VGS=10V, ID=10A - - 13.5 mΩ VGS=4.5V, ID=5A - - 22 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=15V, ID=10A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +25V - - +100 nA Qg Total Gate Charge ID=10A - 13.5 - nC Qgs Gate-Source Charge VDS=15V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 7 - nC td(on) Turn-on Delay Time VDS=25V - 14 - ns tr Rise Time ID=1A - 16 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 21 - ns tf Fall Time RD=25Ω - 15 - ns Ciss Input Capacitance VGS=0V - 1160 - pF Coss Output Capacitance VDS=15V - 240 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 165 - pF Min. Typ. IS=2.1A, VGS=0V - - 1.2 V o Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=5A, VGS=0V, - 17.1 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4410GM-HF 150 200 o T A =150 o C 10V 8.0V 150 ID , Drain Current (A) ID , Drain Current (A) T A =25 C 6.0V 100 50 8.0V 100 6.0V 50 V G =4.0V V G =4.0V 0 0 0 1 2 3 4 5 6 7 0 8 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.8 I D =10A I D =10A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 18 RDS(ON) (mΩ ) 10V 16 14 1.4 1.2 1 12 0.8 10 0.6 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 IS(A) VGS(th) (V) 2 o o T j =150 C T j =25 C 1.00 1 0.10 0 0.01 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Jujnction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4410GM-HF f=1.0MHz 10000 10 I D =10A V DS =15V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 12 6 4 C oss C rss 100 2 0 10 0 5 10 15 20 25 30 1 6 Q G , Total Gate Charge (nC) 11 16 21 26 31 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 1ms 10 ID (A) Normalized Thermal Response (R thja) DUTY=0.5 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Circuit Charge Q Fig 12. Gate Charge Circuit 4 AP4410GM-HF MARKING INFORMATION Part Number 4410GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5