AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 12A RDS(ON) (at VGS=10V) < 0.52Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N50L & AOTF12N50L & AOB12N50L Top View TO-220 TO-263 D2PAK TO-220F D D G G D S AOT12N50 AOTF12N50 G D S S AOB12N50 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT12N50/AOB12N50 Parameter Symbol VDS Drain-Source Voltage 500 Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOTF12N50 ±30 ID S G Units V V 12 12* 8.4 8.4* A IDM 48 Avalanche Current C IAR 5.5 A Repetitive avalanche energy C EAR 454 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 908 40 5 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt PD 50 W 2 0.4 -55 to 150 W/ oC °C 300 °C AOT12N50/AOB12N50 65 AOTF12N50 65 Units °C/W 0.5 0.5 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.8.0: April 2014 250 TL Symbol RθJA RθCS mJ V/ns www.aosmd.com Page 1 of 6 AOT12N50/AOB12N50/AOTF12N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.54 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V VGS=10V, ID=6A 0.36 0.52 Ω VDS=40V, ID=6A 16 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 0.72 1089 1361 1633 pF VGS=0V, VDS=25V, f=1MHz 134 167 200 pF 10 12.6 15 pF VGS=0V, VDS=0V, f=1MHz 1.8 3.6 5.4 Ω 30.7 37 nC 7.6 9 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3.3 VGS=10V, VDS=400V, ID=12A Qgd Gate Drain Charge 13.0 16 nC tD(on) Turn-On DelayTime 29 35 ns tr Turn-On Rise Time 69 83 ns tD(off) Turn-Off DelayTime 82 98 ns tf trr Turn-Off Fall Time 55.5 67 ns IF=12A,dI/dt=100A/µs,VDS=100V 231 277 Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 2.82 3.4 ns µC Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=12A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: April 2014 www.aosmd.com Page 2 of 6 AOT12N50/AOB12N50/AOTF12N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 100 10V 16 10 6V ID(A) ID (A) -55°C VDS=40V 6.5V 20 12 8 125°C 1 VGS=5.5V 25°C 4 0.1 0 0 5 10 15 20 25 2 30 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 0.8 Normalized On-Resistance 3 0.7 RDS(ON) (Ω) 4 0.6 0.5 VGS=10V 0.4 0.3 0 4 8 12 16 20 24 2.5 VGS=10V ID=6A 2 1.5 1 0.5 0 -100 28 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev.8.0: April 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT12N50/AOB12N50/AOTF12N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=400V ID=12A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 1 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 RDS(ON) limited 10µs 100µs 1ms 1 DC 10ms 10µs RDS(ON) limited 10 ID (Amps) 10 ID (Amps) 0.1 45 100µs 1ms 10ms 1 0.1s DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 0.1 1s 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N50/AOB12N50 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N50 (Note F) 15 Current rating ID(A) 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev.8.0: April 2014 www.aosmd.com Page 4 of 6 AOT12N50/AOB12N50/AOTF12N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N50/AOB12N50 (Note F) 100 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N50 (Note F) Rev.8.0: April 2014 www.aosmd.com Page 5 of 6 AOT12N50/AOB12N50/AOTF12N50 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.8.0: April 2014 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6