DFM600BXS12-A000 Fast Recovery Diode Module PDS5725-1.3 October 2007 (LN25580) FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop Isolated Base KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 1200V 2.0 V 600A 1200A APPLICATIONS Chopper Diodes Boost and Buck Converters Free-wheel Circuits Snubber Circuits Resonant Converters Multi-level Switch Inverters The DFM600BXS12-A000 is a single 1200V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. 2(A) 1(K) Fig. 1 Circuit diagram Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporates electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sink for safety. ORDERING INFORMATION Outline type code: B Order As: (See package details for further information) DFM600BXS12-A000 Note: When ordering, please use the whole part number. Fig. 2 Module outline 1 /7 www.dynexsemi.com DFM600BXS12-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol VRRM Parameter Test Conditions Max. Units Repetitive peak reverse voltage Tj = 125° C 1200 V IF Forward current (per arm) DC, Tcase = 70° C, Tj = 125° C 600 A IFM Max. forward current Tcase = 110° C, tp = 1ms 1200 A IFSM Surge (non repetitive) forward current 3347 A It 2 I t value fuse current rating 2 VR = 0, tP = 10ms, Tj = 125° C 56 kA s 2 Pmax Maximum power dissipation Tcase = 25° C, Tj = 125° C 2.0 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2.5 kV THERMAL AND MECHANICAL RATINGS Internal insulation material: Al2O3 Baseplate material: Copper Creepage distance: 20mm Clearance: 11mm CTI (Critical Tracking Index): 175 Symbol Rth(j-c) Parameter Thermal resistance – diode (per arm) Test Conditions Continuous dissipation – Min. Typ. Max. Units - - 50 ° C/kW - - 15 ° C/kW junction to case Rth(c-h) Tj Tstg - Thermal resistance – case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature - - - 125 °C Storage temperature range - -40 - 125 °C 3 - 5 Nm 2.5 - 5 Nm Screw torque Mounting – M6 Electrical connections – M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 /7 DFM600BXS12-A000 SEMICONDUCTOR STATIC ELECTRICAL CHARACTERISTICS Tj = 25° C unless stated otherwise. Symbol Parameter IRM Peak reverse current VF Forward voltage L Test Conditions Min. Typ. Max. Units VR = 1200V, Tj = 125° C - - 10 mA IF = 600A - 2.0 2.5 V IF = 600A, Tj = 125° C - 2.05 2.55 V - - 16 - nH Test Conditions Min. Typ. Max. Units - 0.8 - - 600 - A - 110 - - 35 - mJ Min. Typ. Max. Units - 0.6 - - 640 - A - 170 - - 65 - mJ Inductance (module) DYNAMIC ELECTRICAL CHARACTERISTICS Tj = 25° C unless stated otherwise. Symbol trr Parameter Reverse recovery time IF = 600A, Irr Reverse recovery current Qrr Reverse recovery charge dIF VR = 600V Erec Reverse recovery energy Tj = 125° C unless stated otherwise. Symbol trr Parameter Test Conditions Reverse recovery time IF = 600A, Irr Reverse recovery current Qrr Reverse recovery charge dIF VR = 600V Erec Reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3 /7 DFM600BXS12-A000 SEMICONDUCTOR 100 1600 Tj = 25° C Tj = 125° C Transient thermal impedance, Zth (j-c) - (° C/kW ) VF is measured at power busbars and not the auxiliary terminals 1400 Forward current, IF - (A) 1200 1000 800 600 400 200 10 1 Diode 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 0.001 0.01 Forward voltage, VF - (V) 2500 1000 2000 800 1500 1000 0.1 Pulse width, tp - (s) 1 4 22.51 113.97 10 600 400 200 500 0 0 3 18.56 38.58 1 1.12 0.10 Fig.4 Transient thermal impedance Forward current, IF - (A) Power dissipation - (W) Fig.3 Diode Typical forward characteristics 2 6.32 3.21 Ri (° C/KW) ti (ms) 25 50 75 100 Case temperature, Tc - ° C Fig.5 Power dissipation 125 0 0 25 50 75 100 Case temperature, Tc - (° C) Fig.6 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 125 4 /7 DFM600BXS12-A000 SEMICONDUCTOR 1200 Tcase =125° C Reverse recovery current, Irr - (A) 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V) Fig.7 RBSOA Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /7 DFM600BXS12-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 475g Module outline type code: B Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 6 /7 DFM600BXS12-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /7