Dynex DFM600BXS12-A000 Fast recovery diode module Datasheet

DFM600BXS12-A000
Fast Recovery Diode Module
PDS5725-1.3 October 2007 (LN25580)
FEATURES
Low Reverse Recovery Charge
High Switching Speed
Low Forward Voltage Drop
Isolated Base
KEY PARAMETERS
VRRM
VF
(typ)
IF
(max)
IFM
(max)
1200V
2.0 V
600A
1200A
APPLICATIONS
Chopper Diodes
Boost and Buck Converters
Free-wheel Circuits
Snubber Circuits
Resonant Converters
Multi-level Switch Inverters
The DFM600BXS12-A000 is a single 1200V, fast
recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of
high voltage applications in motor drives and power
conversion.
2(A)
1(K)
Fig. 1 Circuit diagram
Fast switching times and low reverse recovery
losses allow high frequency operation making the
device suitable for the latest drive designs
employing pwm and high frequency switching.
These modules incorporates electrically isolated
base plates and low inductance construction
enabling circuit designers to optimise circuit layouts
and utilise grounded heat sink for safety.
ORDERING INFORMATION
Outline type code: B
Order As:
(See package details for further information)
DFM600BXS12-A000
Note: When ordering, please use the whole part number.
Fig. 2 Module outline
1 /7
www.dynexsemi.com
DFM600BXS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
VRRM
Parameter
Test Conditions
Max.
Units
Repetitive peak reverse voltage
Tj = 125° C
1200
V
IF
Forward current (per arm)
DC, Tcase = 70° C, Tj = 125° C
600
A
IFM
Max. forward current
Tcase = 110° C, tp = 1ms
1200
A
IFSM
Surge (non repetitive) forward
current
3347
A
It
2
I t value fuse current rating
2
VR = 0, tP = 10ms, Tj = 125° C
56
kA s
2
Pmax
Maximum power dissipation
Tcase = 25° C, Tj = 125° C
2.0
kW
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2.5
kV
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Al2O3
Baseplate material:
Copper
Creepage distance:
20mm
Clearance:
11mm
CTI (Critical Tracking Index):
175
Symbol
Rth(j-c)
Parameter
Thermal resistance – diode (per arm)
Test Conditions
Continuous dissipation –
Min.
Typ.
Max.
Units
-
-
50
° C/kW
-
-
15
° C/kW
junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance – case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
-
-
-
125
°C
Storage temperature range
-
-40
-
125
°C
3
-
5
Nm
2.5
-
5
Nm
Screw torque
Mounting – M6
Electrical connections – M6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
2 /7
DFM600BXS12-A000
SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS
Tj = 25° C unless stated otherwise.
Symbol
Parameter
IRM
Peak reverse current
VF
Forward voltage
L
Test Conditions
Min.
Typ.
Max.
Units
VR = 1200V, Tj = 125° C
-
-
10
mA
IF = 600A
-
2.0
2.5
V
IF = 600A, Tj = 125° C
-
2.05
2.55
V
-
-
16
-
nH
Test Conditions
Min.
Typ.
Max.
Units
-
0.8
-
-
600
-
A
-
110
-
-
35
-
mJ
Min.
Typ.
Max.
Units
-
0.6
-
-
640
-
A
-
170
-
-
65
-
mJ
Inductance (module)
DYNAMIC ELECTRICAL CHARACTERISTICS
Tj = 25° C unless stated otherwise.
Symbol
trr
Parameter
Reverse recovery time
IF = 600A,
Irr
Reverse recovery current
Qrr
Reverse recovery charge
dIF
VR = 600V
Erec
Reverse recovery energy
Tj = 125° C unless stated otherwise.
Symbol
trr
Parameter
Test Conditions
Reverse recovery time
IF = 600A,
Irr
Reverse recovery current
Qrr
Reverse recovery charge
dIF
VR = 600V
Erec
Reverse recovery energy
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
3 /7
DFM600BXS12-A000
SEMICONDUCTOR
100
1600
Tj = 25° C
Tj = 125° C
Transient thermal impedance, Zth (j-c) - (° C/kW )
VF is measured at power busbars
and not the auxiliary terminals
1400
Forward current, IF - (A)
1200
1000
800
600
400
200
10
1
Diode
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
0.001
0.01
Forward voltage, VF - (V)
2500
1000
2000
800
1500
1000
0.1
Pulse width, tp - (s)
1
4
22.51
113.97
10
600
400
200
500
0
0
3
18.56
38.58
1
1.12
0.10
Fig.4 Transient thermal impedance
Forward current, IF - (A)
Power dissipation - (W)
Fig.3 Diode Typical forward characteristics
2
6.32
3.21
Ri (° C/KW)
ti (ms)
25
50
75
100
Case temperature, Tc - ° C
Fig.5 Power dissipation
125
0
0
25
50
75
100
Case temperature, Tc - (° C)
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
125
4 /7
DFM600BXS12-A000
SEMICONDUCTOR
1200
Tcase =125° C
Reverse recovery current, Irr - (A)
1000
800
600
400
200
0
0
200
400
600
800
1000
1200
1400
Reverse voltage, VR - (V)
Fig.7 RBSOA
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
5 /7
DFM600BXS12-A000
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 475g
Module outline type code: B
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
6 /7
DFM600BXS12-A000
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
7 /7
Similar pages