SSC ES1J Super fast surface mount rectifier Datasheet

ES1M
SUPER FAST SURFACE
MOUNT RECTIFIERS
PRODUCT SUMMARY
Reverse Voltage 50 to 1000 Volts
Forward current 1.0 Ampere
FEATURES
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
o
250 C /10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Classification 94V-O
MECHANICAL DATA
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Weight: 0.002 ounce, 0.064 gram
Pb-free; RoHS-compliant
07/04/2007 Rev.1.00
www.SiliconStandard.com
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ES1M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbols
ES
1A
ES
1B
ES
1C
ES
1D
ES
1F
ES
1G
ES
1J
ES
1K
ES
1M
Units
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
105
140
210
280
420
560
700
Volts
Maximum DC blocking voltage
V DC
50
100
150
200
300
400
600
800
1000
Volts
Maximum average forward rectified current
S ee F i g. 1
I(AV)
1.0
Amp
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage @ 1.0A
VF
Parameter
Maximum DC reverse current
at rated DC blocking voltage
@ TA=25oC
@ TA=100oC
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
0.95
1.3
1.7
Volts
IR
5.0
100
uA
uA
trr
35
nS
CJ
10
8
pF
RθJA
RθJL
85
35
TJ
-55 to +150
o
C
TSTG
-55 to +150
o
C
o
C/W
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area.
07/04/2007 Rev.1.00
www.SiliconStandard.com
2
ES1M
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
07/04/2007 Rev.1.00
www.SiliconStandard.com
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