ES1M SUPER FAST SURFACE MOUNT RECTIFIERS PRODUCT SUMMARY Reverse Voltage 50 to 1000 Volts Forward current 1.0 Ampere FEATURES For surface mounted application Low profile package Built-in strain relief, Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: o 250 C /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O MECHANICAL DATA Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Weight: 0.002 ounce, 0.064 gram Pb-free; RoHS-compliant 07/04/2007 Rev.1.00 www.SiliconStandard.com 1 ES1M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbols ES 1A ES 1B ES 1C ES 1D ES 1F ES 1G ES 1J ES 1K ES 1M Units Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 105 140 210 280 420 560 700 Volts Maximum DC blocking voltage V DC 50 100 150 200 300 400 600 800 1000 Volts Maximum average forward rectified current S ee F i g. 1 I(AV) 1.0 Amp Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30.0 Amps Maximum instantaneous forward voltage @ 1.0A VF Parameter Maximum DC reverse current at rated DC blocking voltage @ TA=25oC @ TA=100oC Maximum reverse recovery time (Note 1) Typical junction capacitance (Note 2) Typical thermal resistance (Note 3) Operating junction temperature range Storage temperature range Notes: 0.95 1.3 1.7 Volts IR 5.0 100 uA uA trr 35 nS CJ 10 8 pF RθJA RθJL 85 35 TJ -55 to +150 o C TSTG -55 to +150 o C o C/W 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area. 07/04/2007 Rev.1.00 www.SiliconStandard.com 2 ES1M RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 07/04/2007 Rev.1.00 www.SiliconStandard.com 3