EIC BR2510 Silicon bridge rectifier Datasheet

BR2500 - BR2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
BR50
Io : 25 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR2500 BR2501 BR2502 BR2504 BR2506 BR2508 BR2510 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
35
70
140
280
420
50
100
200
400
600
560
700
Volts
800
1000
Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
25
Amps.
IFSM
300
Amps.
Current Squared Time at t < 8.3 ms.
2
It
375
A S
Maximum Forward Voltage per Diode at IF = 12.5 Amp.
VF
1.1
Volts
IR
10
µA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
2
IR(H)
200
µA
RθJC
1.45
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 )
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
30
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
25
20
15
10
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
5
0
0
25
50
75
100
125
150
250
TJ = 50 °C
200
150
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
50
0
175
1
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
4
6
10
20
40
60
10
Pulse Width = 300 µ s
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
PER DIODE
10
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.01
0
20
40
60
80
100
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
FORWARD CURRENT, AMPERES
2
NUMBER OF CYCLES AT 60Hz
1.8
140
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