BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Rev. 01 — 17 March 2003 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package. Product availability: BUK212-50Y in SOT263B-01 BUK217-50Y in SOT426 (D2-PAK). 1.2 Features ■ ■ ■ ■ ■ ■ ■ Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection ■ ■ ■ ■ ■ ■ ■ CMOS logic capability Negative load clamping Overload protection ESD protection for all pins Diagnostic status indication Operating voltage down to 5.5 V Current limitation. 1.3 Applications ■ 12 V and 24 V grounded loads ■ Inductive loads ■ High inrush current loads ■ Replacement for relays and fuses. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Min Max Unit RBLon battery-load on-state resistance - 14 mΩ IL load current - 44 A IL(nom) nominal load current (ISO) 25 - A IL(lim) self-limiting load current 47 100 A VBG(oper) battery-ground operating voltage 5.5 35 V BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 2. Pinning information mb mb B S I 1 2 3 4 5 1 5 MBL431 Fig 1. Pinning; SOT426 (D2-PAK). 03pa56 P L G MBL264 Fig 2. Pinning; SOT263B-01. Fig 3. Symbol; (HSS) TOPFETTM. 2.1 Pin description Table 2: Pin description Symbol Pin I/O Description G 1 - circuit common ground I 2 I battery B 3 - S 4 O status L 5 O load - mb - [1] [2] [2] mounting base It is not possible to make a connection to pin 3 of the SOT426 package. The battery is connected to the mounting base. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data input [1] [2] Rev. 01 — 17 March 2003 2 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 3. Block diagram battery 4 status 3/mb VOLTAGE REGULATOR CHARGE PUMP SHORT CIRCUIT PROTECTION POWER MOSFET CURRENT LIMIT OVERVOLTAGE PROTECTION 2 input CONTROL LOGIC UNDERVOLTAGE PROTECTION load LOW CURRENT DETECT 5 TEMPERATURE SENSOR 03pa33 RG 1 ground Fig 4. Elements of the high-side TOPFET switch. 4. Functional description Table 3: Truth table Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present; UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1]. Input [1] Supply Load Load Status Operating mode UV OV LC SC OT output L X X X X X OFF H off H 0 0 0 0 0 ON H on & normal H 0 0 1 0 0 ON L on & low current detect H 1 0 X X X OFF H supply undervoltage lockout H 0 1 X 0 0 OFF H supply overvoltage shutdown H 0 0 0 1 X OFF L SC tripped H 0 0 0 0 1 OFF L OT shutdown The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold. See “Overtemperature protection” characteristics in Table 6. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 3 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VBG battery-ground supply voltage IL load current Tmb ≤ 90 °C Ptot total power dissipation Tmb ≤ 25 °C - 115 W Tstg storage temperature −55 +175 °C Tj junction temperature - +150 °C Tmb mounting base temperature - 260 °C - 16 V - 32 V during soldering (≤ 10 s) Min Max Unit - 50 V - 44 A Reverse battery voltage VBGR reverse battery-ground supply voltage VBGRR repetitive reverse battery-ground supply voltage [1] External resistor RI RS input resistor [2] 3.3 - kΩ status resistor [3] 3.3 - kΩ −5 +5 mA −50 +50 mA −5 +5 mA δ ≤ 0.1; tp = 300 µs −50 +50 mA Tj = 150 °C prior to turn-off; IL = 20 A - 460 mJ Human body model; C = 100 pF; R = 1.5 kΩ - 2 kV Input current II input current IIRM repetitive peak input current δ ≤ 0.1; tp = 300 µs Status current IS status current ISRM repetitive peak status current Inductive load clamping EBL(CL)S non-repetitive battery-load clamping energy Electrostatic discharge Vesd [1] [2] [3] electrostatic discharge voltage Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse current. The internal ground resistor limits the reverse battery ground current. To limit input current during reverse battery and transient overvoltages. To limit status current during reverse battery and transient overvoltages. 6. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to mounting base - 0.86 1.08 K/W thermal resistance from junction to mounted on printed circuit board; ambient minimum footprint; SOT426 - 50 - K/W © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 4 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 7. Static characteristics Table 6: Static characteristics Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IG = 1 mA; Figure 6 50 55 65 V Clamping voltage VBG(CL) battery-ground clamping voltage VBL(CL) battery-load clamping voltage IL = IG = 1 mA 50 55 65 V VLG(CL) load-ground clamping voltage IL = 10 mA; Figure 12 and 14 −18 −23 −28 V −20 −25 −30 V 5.5 - 35 V Tmb = 150 °C - - 20 µA Tmb = 25 °C - 0.1 2 µA Tmb = 150 °C - - 20 µA Tmb = 25 °C - 0.1 1 µA IL = 20 A; tp = 300 µs [1] Supply voltage VBG(oper) battery-ground operating voltage Current IB IL(off) battery quiescent current off-state load current VLG = 0 V; Figure 10 [2] VBL = VBG IG(on) operating current Figure 6 IL(nom) nominal load current (ISO) VBL = 0.5 V; Tmb = 85 °C - 2 4 mA 25 - - A Tmb = 25 °C - 10 14 mΩ Tmb = 150 °C - - 25 mΩ - 13 18 mΩ [3] Resistance [4] RBLon battery-load on-state resistance 9 V ≤ VBG ≤ 35 V; IL = 20 A; Figure 5 VBG = 6 V; IL = 20 A Tmb = 25 °C Tmb = 150 °C [5] - - 33 mΩ 95 150 190 Ω 20 90 160 µA ground resistance IG = 10 mA II input current VIG = 5 V VIG(CL) input-ground clamping voltage II = 200 µA 5.5 7 8.5 V VIG(on) input-ground turn-on voltage Figure 9 - 2.4 3 V VIG(off) input-ground turn-off voltage 1.5 2.1 - V VIG(on)(hys) input-ground turn-on hysteresis - 0.3 - V II(on) input turn-on current VIG = 3 V - - 100 µA II(off) input turn-off current VIG = 1.5 V 10 - - µA −40 °C ≤ Tmb ≤ +150 °C 0.55 - 4.4 A Tmb = 25 °C; Figure 15 0.65 1.8 2.9 A - 0.44 - A RG Input [6] Low current detection [7][10] IL(LC) load low current detect IL(LC)(hys) load low current detect hysteresis © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 5 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ Table 6: Static characteristics…continued Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 2 4.2 5.5 V - 0.5 - V 35 45 50 V - 1 - V 47 74 100 A 8 10 12 V 15 20 25 V 150 170 190 °C - 10 - °C 5.5 7 8.5 V Tmb = −40 °C - - 1 V Tmb = 25 °C - 0.7 0.8 V - - 15 µA - 0.1 1 µA - 47 - kΩ Undervoltage [10] VBG(uv) [8] battery-ground undervoltage VBG(uv)(hys) battery-ground undervoltage hysteresis Overvoltage [10] VBG(ov) [9] battery-ground overvoltage VBG(ov)(hys) battery-ground overvoltage hysteresis Overload protection [10] IL(lim) self-limiting load current VBG ≥ 9 V; VBL = VBG; Figure 8 [10][11] Short circuit load protection VBL(off) battery-load turn-off voltage [11] VBG = 16 V; Figure 11 [12] VBG = 35 V Overtemperature protection [10][11] Tj(th) threshold junction temperature Tj(th)(hys) threshold junction temperature hysteresis [13] Status [6][10] VSG(CL) status-ground clamping voltage IS = 100 µA VSG(L) status-ground low voltage IS = 100 µA; Figure 7 IS(off) status leakage current VSG = 5 V Tmb = 150 °C Tmb = 25 °C status resistor RS [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] connected externally; VSG = 5 V [14] For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This is the current drawn from the supply when the input is LOW, and includes leakage current to the load. Defined as in ISO 10483-1. For comparison purposes only. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the applied load current. RG is a resistor incorporated internally in the package. 9 V ≤ VBG ≤ 16 V 9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state. Undervoltage sensor causes the device to switch off and reset. Overvoltage sensor causes the device to switch off to protect the load. See Table 3 “Truth table” 5.5 V ≤ VBG ≤ 35 V The battery-to-load threshold voltage for short circuit is approximately proportional to the battery supply voltage. After cooling below the reset temperature the switch will resume normal operation. The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 6 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa65 25 RBLon (mΩ) Tj = 150 °C 20 15 Tj = 25 °C 10 Tj = -40 °C 5 0 0 8 16 24 32 40 VBG (V) IL = 20 A; VIG = 5 V Fig 5. Battery-load on-state resistance as a function of battery-ground supply voltage; typical values. 03pa55 4 IG (mA) clamping 3 overvoltage shutdown undervoltage shutdown Tj = −40 °C Tj = 25 °C 2 Tj = 150 °C 1 0 0 25 50 VBG (V) 75 VIG = 5 V Fig 6. Supply current characteristics: operating current as a function of battery-ground supply voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 7 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa38 4 03pa63 80 IL (A) IS (mA) 60 3 VBL(off) 2 40 1 20 0 0 3 2 1 4 VBG = 13 V; VIG = 5 V; Tj = 25 °C 0 4 8 VBL (V) 12 VBG = 16 V; VIG = 5 V; Tmb = 25 °C (the device trips after 200 µs (typical), and status goes LOW). Fig 7. Status current as a function of status-ground voltage; typical values. 03pa36 3.5 VIG (V) 3 0 VSG (V) Fig 8. Load current limiting as a function of battery-load voltage; typical values. 03pa64 8 IB (µ A) max 6 2.5 4 VIG (on) 2 VIG (off) 1.5 1 -50 2 min 0 50 100 150 200 Tj (°C) 9 V ≤ VBG ≤ 16 V 0 -50 50 100 150 200 Tj (°C) VBG = 16 V Fig 9. Input-ground voltage as a function of junction temperature. Fig 10. Battery quiescent current as a function of junction temperature; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data 0 Rev. 01 — 17 March 2003 8 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 03pa40 30 VBL(off) max (V) typ 20 min 10 0 10 0 20 30 50 40 VBG (V) VIG = 5 V; −40 °C ≤ Tmb ≤ +150 °C Fig 11. Battery-load turn-off voltage as a function of battery-ground voltage. 8. Dynamic characteristics Table 7: Switching characteristics Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13 Symbol Parameter Conditions Min Typ Max Unit to 10% VL - 40 90 µs Turn-on measured from the input going HIGH td(on) turn-on delay time dV/dton rising slew rate 30 to 70% VL - 0.5 1.0 V/µs ton turn-on switching time to 90% VL - 180 310 µs to 90% VL - 75 120 µs Turn-off measured from the input going LOW td(off) turn-off delay time dV/dtoff falling slew rate 70 to 30% VL - 0.5 1.0 V/µs toff turn-off switching time to 10% VL - 105 160 µs Table 8: Status response times Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Measured from when the input goes HIGH td(sc) short circuit response time VBL > VBL(off); Figure 16 - 180 250 µs td(lc) low current detect response time IL < IL(LC); Figure 15 - 200 - µs © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 9 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ Table 9: Capacitances Tmb = 25 °C; f = 1 MHz; VIG = 0 V. Symbol Parameter Conditions Min Typ Max Unit Cig input-ground capacitance VBG = 13 V - 15 20 pF Cbl battery-load output capacitance VBL = 13 V - 635 900 pF Csg status-ground capacitance VSG = 5 V - 11 15 pF ton toff 90% VL dV/dton dV/dtoff 10% 0V RS 5V VBG RI VSG P 0V VSG LL VL VIG 5V VIG RL 0 03pa51 03pa45 VBG = 13 V; VIG = 5 V and Tmb = 25 °C Fig 12. Schematic drawing of the switching circuit. VL Fig 13. Resistive switching waveforms and definitions. 0V ton IL(LC) EBL(CL)S toff 90% VL IL 0V 0A 5V 10% td(lc) 5V VSG VSG 0.7 V 0V 0.7 V 0V 5V 5V VIG VIG 0 0 03pa48 03pa50 Fig 14. Switching a large inductive load. Fig 15. Low current detection waveforms. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 10 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ td(sc) IL 0A 5V VSG 0.7 V 0V 5V VIG 0 03pa49 VBL ≥ VBL(off) Fig 16. Short circuit protection waveforms. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 11 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 9. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A A1 E D1 mounting base D HD 3 1 2 4 e e Lp 5 b e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.70 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT426 Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to Data Handbook SC18. Fig 17. SOT426 (D2-PAK). © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 12 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 4.5 4.1 A1 b 1.39 0.85 1.27 0.70 c D D1 E 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 e L L1 L2 L3(1) 1.7 9.8 9.7 5.9 5.3 5.2 5.0 2.4 1.6 L4(2) max. m ∅p p1 q Q Q1 Q2 R w 0.5 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.0 4.5 8.2 0.5 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B-01 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 5-lead (option) TO-220 ISSUE DATE 01-01-11 Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g Fig 18. SOT263B-01. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 13 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 10. Revision history Table 10: Revision history Rev Date 01 20030317 CPCN Description - Product data (9397 750 10768). © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Product data Rev. 01 — 17 March 2003 14 of 16 BUK212-50Y; BUK217-50Y Philips Semiconductors Single channel high-side TOPFET™ 11. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Trademarks 13. Disclaimers TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10768 Rev. 01 — 17 March 2003 15 of 16 Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Contents 1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 March 2003 Document order number: 9397 750 10768