Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI BS616UV8011 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2,CE1 and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616UV8011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV8011 is available in 48-pin BGA package. PRODUCT FAMILY Vcc RANGE OPERATING TEMPERATURE PRODUCT FAMILY BS616UV8011DC O O BS616UV8011BC +0 C to +70 C 1.8 ~ 2.3V BS616UV8011FC BS616UV8011DI O O BS616UV8011BI - 40 C to +85 C 1.8 ~ 2.3V BS616UV8011FI PIN CONFIGURATIONS A SPEED (ns) POWER DISSIPATION STANDBY (ICCSB1 , Max) Operating (I CC , Max) Vcc=2V Vcc=2V Vcc=2V 70 / 100 15uA 20mA 70 / 100 20uA 25mA 2 3 4 5 6 A4 A3 A2 LB OE A0 A1 A2 CE2 A1 Address A0 A17 Input B D8 UB A3 A4 CE1 D0 C D9 D10 A5 A6 D1 D2 D VSS D11 A17 A7 D3 VCC E VCC D12 VSS A16 D4 VSS A16 A15 A14 A13 A12 Buffer D6 A13 WE D7 A10 A11 NC D13 A14 A15 G D15 NC . A 12 H A 18 A8 A9 22 2048 Row Memory Array Decoder 2048 x 4096 4096 16 D0 . . . . . . . . Data Input Buffer 16 Column I/O Write Driver Sense Amp 16 Data Output Buffer D15 D5 D14 DICE BGA -48 -0810 BGA -48 -0912 DICE BGA -48 -0810 BGA -48 -0912 BLOCK DIAGRAM 1 F PKG TYPE 256 16 Column Decoder CE2 CE1 16 WE OE UB LB Control Address Input Buffer A11 A10 A9 A8 A7 A6 A5 A18 Vcc Gnd 48-Ball CSP top View Brilliance Semiconductor Inc. reserves the right to modify document contents without notice. R0201-BS616UV8011 1 Revision 2.2 April 2001 BSI BS616UV8011 PIN DESCRIPTIONS Name Function A0-A18 Address Input These 19 address inputs select one of the 524,288 x 16-bit words in the RAM. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. D0 - D15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground TRUTH TABLE MODE Not selected (Power Down) Output Disabled Read CE1 H CE2 WE OE LB UB D0~D7 D8~D15 Vcc CURRENT X X X X X High Z High Z ICCSB , I CCSB1 X L X X X X High Z High Z ICCSB , I CCSB1 L H H H X X High Z High Z ICC L L Dout Dout ICC H L High Z Dout ICC L H Dout High Z ICC L L Din Din ICC H L X Din ICC L H Din X ICC L Write L H H H L L X OPERATING RANGE ABSOLUTE MAXIMUM RATINGS(1) SYMBOL PARAMETER with RATING UNITS -0.5 to Vcc+0.5 V VTERM Terminal Voltage Respect to GND TBIAS Temperature Under Bias -40 to +125 O TSTG Storage Temperature -60 to +150 O PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA C RANGE AMBIENT TEMPERATURE Vcc Commercial 0 O C to +70O C 1.8V ~ 2.3V Industrial O O -40 C to +85 C 1.8V ~ 2.3V C CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) SYMBOL PARAMETER CONDITIONS MAX. Input CIN VIN=0V 10 1. Stresses greater than those listed under ABSOLUTE MAXIMUM Capacitance RATINGS may cause permanent damage to the device. This is a Input/Output CDQ VI/O=0V 12 stress rating only and functional operation of the device at these Capacitance or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute 1. This parameter is guaranteed and not tested. maximum rating conditions for extended periods may affect reliability. R0201-BS616UV8011 2 UNIT pF pF Revision 2.2 April 2001 BSI BS616UV8011 DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC ) PARAMETER NAME PARAMETER MIN. TYP.(1) MAX. TEST CONDITIONS UNITS VIL Guaranteed Input Low Voltage (2) Vcc=2V -0.5 -- 0.6 V VIH Guaranteed Input High Voltage (2) Vcc=2V 1.4 -- Vcc+0.2 V IIL Input Leakage Current -- -- 1 uA -- -- 1 uA -1.6 --- 0.4 -- V V -- -- 20 mA Vcc=2V -- -- 0.6 mA Vcc=2V -- 0.6 15 uA Vcc = Max, VIN = 0V to Vcc IOL Output Leakage Current VOL VOH Output Low Voltage Vcc = Max, CE1 = V IH, or CE2 = ViL , or OE = VIH, VI/O = 0V to Vcc Vcc=2V Vcc = Max, IOL = 1mA Vcc=2V Vcc = Min, IOH = - 0.5mA Vcc=max, CE1=VIL and CE2= Vcc=2V VIH, IDQ = 0mA, F = Fmax (3) Output High Voltage Operating Power Supply Current ICC ICCSB Standby Current -TTL ICCSB1 Standby Current - CMOS Vcc= max, CE1 =VIH or CE2 = VIL ,IDQ = 0mA Vcc= max,CE1Њ Vcc-0.2V, or CE2 Љ 0.2V, V INЊ Vcc - 0.2V or VIN Љ 0.2V 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/tRC . DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC ) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE1 Њ Vcc - 0.2V or CE2Љ0.2V VIN Њ Vcc - 0.2V or VIN Љ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE1 Њ Vcc - 0.2V or CE2Љ0.2V VIN Њ Vcc - 0.2V or VIN Љ 0.2V -- 0.4 10 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns TRC (2) -- -- ns tR See Retention Waveform Operation Recovery Time 1. Vcc = 1.5V, TA = + 25 C 2. tRC = Read Cycle Time O LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) Data Retention Mode Vcc VDR ≥ 1.5V Vcc CE1 Vcc tR t CDR CE1≥ Vcc - 0.2V VIH VIH LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled ) Data Retention Mode Vcc VDR Њ 1.5V Vcc CE2 R0201-BS616UV8011 VIL Vcc tR t CDR CE2 Љ 0.2V 3 VIL Revision 2.2 April 2001 BSI BS616UV8011 KEY TO SWITCHING WAVEFORMS AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Vcc/0V 5ns WAVEFORM 0.5Vcc AC TEST LOADS AND WAVEFORMS 1333 Ω 2V 1333 Ω 2V OUTPUT INPUTS OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H OUTPUT , 100PF INCLUDING JIG AND SCOPE 5PF INCLUDING JIG AND SCOPE 2000 Ω 2000 Ω FIGURE 1A FIGURE 1B THEVENIN EQUIVALENT 800 Ω OUTPUT DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE 1.2V ALL INPUT PULSES Vcc GND 10% → 90% 90% ← → 10% ← 5ns FIGURE 2 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC, Vcc=2V) READ CYCLE JEDEC PARAMETER PARAMETER NAME NAME BS616UV8011-70 MIN. TYP. MAX. DESCRIPTION BS616UV8011-10 MIN. TYP. MAX. UNIT tAVAX tRC Read Cycle Time 70 -- -- 100 -- -- ns tAVQV tAA Address Access Time -- -- 70 -- -- 100 ns tELQV t ACS1 Chip Select Access Time (CE1) -- -- 70 -- -- 100 ns tELQV tBA t ACS2 tBA Chip Select Access Time (CE2) -- -- 70 -- -- 100 ns (LB,UB) -- -- 50 -- -- 60 ns tGLQV tOE Output Enable to Output Valid -- -- 50 -- -- 60 ns tELQX tCLZ Chip Select to Output Low Z (CE2,CE1) 10 -- -- 15 -- -- ns tBE tBE Data Byte Control to Output Low Z (LB,UB) 10 -- -- 15 -- -- ns tGLQX tOLZ Output Enable to Output in Low Z 10 -- -- 15 -- -- ns tEHQZ tBDO tCHZ tBDO Chip Deselect to Output in High Z (CE2,CE1) 0 -- 35 0 -- 40 ns Data Byte Control to Output High Z (LB,UB) 0 -- 30 0 -- 35 ns tGHQZ tOHZ Output Disable to Output in High Z 0 -- 30 0 -- 35 ns tAXOX tOH Output Disable to Address Change 10 -- -- 15 -- -- ns R0201-BS616UV8011 Data Byte Control Access Time 4 Revision 2.2 April 2001 BSI BS616UV8011 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t t t OH AA OH D OUT READ CYCLE2 (1,3,4) CE2 t ACS2 t ACS1 CE1 t t CHZ(5) (5) CLZ D OUT READ CYCLE3 (1,4) t RC ADDRESS t AA OE t CE2 t t CE1 t t t OE OH ACS2 OLZ t ACS1 (5) CLZ OHZ (5) (1,5) t CHZ t BDO LB,UB t BE t BA D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL . 5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. R0201-BS616UV8011 5 Revision 2.2 April 2001 BSI BS616UV8011 AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC, Vcc=2V) WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME DESCRIPTION BS616UV8011-70 MIN. TYP. MAX. BS616UV8011-10 MIN. TYP. MAX. UNIT t AVAX tWC Write Cycle Time 70 -- -- 100 -- -- ns t E1LWH tCW Chip Select to End of Write 70 -- -- 100 -- -- ns t AVWL t AS Address Setup Time 0 -- -- 0 -- -- ns t AVWH t AW Address Valid to End of Write 70 -- -- 100 -- -- ns t WLWH tWP Write Pulse Width 50 -- -- 70 -- -- ns t WHAX t WR1 Write recovery Time 0 -- -- 0 -- -- ns t BW tBW Date Byte Control to End of Write (LB,UB) 60 -- -- 80 -- -- ns t WLQZ tWHZ Write to Output in High Z 0 -- 30 0 -- 40 ns t DVWH tDW Data to Write Time Overlap 30 -- -- 40 -- -- ns t WHDX tDH Data Hold from Write Time 0 -- -- 0 -- -- ns t GHQZ tOHZ Output Disable to Output in High Z 0 -- 30 0 -- 40 ns t WHOX tOW End of Write to Output Active 5 -- -- 10 -- -- ns (CE2,CE1,WE) SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS (3) t WR OE CE2 (5) (11) t CW (5) CE1 t BW (5) LB,UB t AW WE (3) t WP t AS (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS616UV8011 6 Revision 2.2 April 2001 BSI BS616UV8011 WRITE CYCLE2 (1,6) t WC ADDRESS CE2 (11) t (5) CE1 t BW (5) LB,UB t WE CW AW t WR t WP (3) (2) t t AS DH (4,10) t WHZ D OUT (7) (8) t DW t DH (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE2 high transition or CE1 low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write. R0201-BS616UV8011 7 Revision 2.2 April 2001 BSI BS616UV8011 ORDERING INFORMATION BS616UV8011 X X -- Y Y SPEED 70: 70ns 10: 100ns GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE B: BGA - 48 PIN(8x10mm) F: BGA - 48 PIN(9x12mm) D: DICE 1.4 Max. 0.25 ̈́ 0.05 PACKAGE DIMENSIONS NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. SIDE VIEW D 0.1 D1 N D E D1 E1 e 48 10.0 8.0 5.25 3.75 0.75 0.35̈́ 0.05 E1 E ̈́ 0.1 e SOLDER BALL VIEW A 48 mini-BGA (8 x 10mm) R0201-BS616UV8011 8 Revision 2.2 April 2001 BSI BS616UV8011 1.4 Max. 0.25̈́ 0.05 PACKAGE DIMENSIONS (continued) NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. SIDE VIEW D 0.1 3.375 D1 N D E D1 E1 e 48 12.0 9.0 5.25 3.75 0.75 E1 2.625 E ̈́ 0.1 e SOLDER BALL 0.35̈́0.05 VIEW A 48 mini-BGA (9 x 12mm) R0201-BS616UV8011 9 Revision 2.2 April 2001 BSI BS616UV8011 REVISION HISTORY Revision Description Date 2.2 2001 Data Sheet release Apr. 15, 2001 R0201-BS616UV8011 10 Note Revision 2.2 April 2001