AUTOMOTIVE GRADE
PD - 97697A
AUIRF3808
HEXFET® Power MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
V(BR)DSS
D
75V
RDS(on) typ.
max
ID
G
S
5.9m
7.0m
140A
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
G
D
S
TO-220AB
AUIRF3808
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
Units
140
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
c
97
Pulsed Drain Current
550
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
330
2.2
± 20
W
W/°C
V
mJ
IDM
d
A
EAS
Single Pulse Avalanche Energy (Thermally Limited)
430
IAR
Avalanche Current
82
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
See Fig. 12a, 12b, 15, 16
5.5
-55 to + 175
mJ
V/ns
dv/dt
TJ
TSTG
c
ch
e
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
Typ.
Max.
–––
0.45
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
RJC
Junction-to-Case
RCS
RJA
i
Parameter
y
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/15/11
AUIRF3808
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75
–––
–––
2.0
100
–––
–––
–––
–––
–––
0.086
–––
–––
5.9
–––
–––
–––
–––
–––
–––
7.0
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 82A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 82A
μA VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
nA VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
150
31
50
16
140
68
120
4.5
220
47
76
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5310
890
130
6010
570
1140
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
nC
ns
nH
g
pF
ID = 82A
VDS = 60V
VGS = 10V
VDD = 38V
ID = 82A
RG = 2.5
VGS = 10V
Between lead,
f
f
D
G
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
140
ISM
(Body Diode)
Pulsed Source Current
–––
–––
550
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
93
340
1.3
140
510
c
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 82A, VGS = 0V
TJ = 25°C, IF = 82A
di/dt = 100A/μs
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.130mH
RG = 25, IAS = 82A. (See Figure 12).
ISD 82A, di/dt 310A/μs, VDD V(BR)DSS,
TJ 175°C
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
R is measured at TJ of approximately 90°C.
Pulse width 400μs; duty cycle 2%.
2
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AUIRF3808
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
†††
Class M4 (+/- 800V)
AEC-Q101-002
Human Body Model
ESD
Class H2 (+/- 4000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF3808
I D, Drain-to-Source Current (A)
TOP
BOTTOM
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
I D, Drain-to-Source Current (A)
1000
100
4.5V
10
20μs PULSE WIDTH
T J= 25 ° C
1
0.1
1
10
BOTTOM
100
4.5V
10
20μs PULSE WIDTH
T J= 175 ° C
1
100
0.1
1
V DS, Drain-to-Source Voltage (V)
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000.00
I D = 137A
RDS(on) , Drain-to-Source On Resistance
100.00
TJ = 25°C
VDS = 15V
20μs PULSE WIDTH
10.00
2.0
(Normalized)
ID , Drain-to-Source Current )
2.5
TJ = 175°C
1.5
1.0
0.5
V GS = 10V
0.0
-60
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( °C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF3808
100000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
ID = 82A
VDS = 60V
VDS = 37V
VDS = 15V
10
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
8
6
4
2
Crss
0
100
1
10
0
100
40
VDS , Drain-to-Source Voltage (V)
120
160
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
80
QG, Total Gate Charge (nC)
T J = 175°C
100.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
10.00
100
T J = 25°C
1.00
100μsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
10msec
1
0.10
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3808
RD
VDS
140
VGS
120
D.U.T.
ID, Drain Current (A)
RG
+
-VDD
100
80
10V
Pulse Width µs
Duty Factor
60
40
Fig 10a. Switching Time Test Circuit
20
VDS
0
25
50
75
100
125
150
175
90%
T C , Case Temperature (°C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC)
1
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+T C
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3808
15V
800
DRIVER
L
VDS
TOP
D.U.T
RG
+
- VDD
IAS
20V
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
640
BOTTOM
ID
34A
58A
82A
480
320
160
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
3.5
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
VGS(th) Gate threshold Voltage (V)
VG
3.0
ID = 250μA
2.5
2.0
1.5
.3F
D.U.T.
+
V
- DS
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
7
AUIRF3808
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
500
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 140A
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = t av ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
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AUIRF3808
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
-
-
RG
+
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
-
VDD
P.W.
Period
VGS=10V*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. For N-channel HEXFET® power MOSFETs
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9
AUIRF3808
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3808
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3808
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF3808
TO-220
Form
Tube
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Complete Part Number
Quantity
50
AUIRF3808
11
AUIRF3808
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
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implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even
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number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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