High-Performance PWM Controller General Description EC3228 Features constant-on-time, Adjustable Output Voltage from +0.7V to +5.5V synchronous PWM controller, which drives N-channel 0.7V Reference Voltage MOSFETs. The EC3228 steps down high voltage to ±1% Accuracy Over-Temperature generate low-voltage chipset or RAM supplies in notebook Operates from an Input Battery Voltage Range of The EC3228 is a single-phase, computers. +1.8V to +32V The EC3228 provides excellent transient response and Power-On-Reset Monitoring on VCC Pin accurate DC voltage output in either PFM or PWM Mode. In Excellent Line and Load Transient Responses Pulse Frequency Mode (PFM), the EC3228 provides very PFM Mode for Increased Light Load Efficiency high efficiency over light to heavy loads with loading- Selectable PWM Frequency from 4 Preset Values modulated switching frequencies. In PWM Mode, the Integrated MOSFET Drivers converter works nearly at constant frequency for low-noise Integrated Bootstrap Forward P-CH MOSFET requirements. Adjustable Integrated Soft-Start and Soft-Stop The EC3228 is equipped with accurate positive current- Selectable Forced PWM or Automatic PFM/PWM limit, output under-voltage, and output over-voltage Mode protections, perfect for NB applications. The Power-On- Power Good Monitoring Reset function monitors the voltage on VCC to prevent 70% Under-Voltage Protection wrong operation during power-on. The EC3228 has a 1ms 125% Over-Voltage Protection digital soft-start and built-in an integrated output Adjustable Current-Limit Protection discharge method for soft-stop. An internal integrated Using Sense Low-Side MOSFET’s RDS(ON) soft-start ramps up the output voltage with programmable Over-Temperature Protection slew rate to reduce the start-up current. A soft-stop function TDFN-10 3x3 Package actively discharges the output capacitors with controlled Lead Free and Green Devices Available reverse inductor current. (RoHS Compliant) The EC3228 is available in 10pin TDFN 3x3 package. Applications E-CMOS Corp. (www.ecmos.com.tw) Notebook Table PC Hand-Held Portable AIO PC LCD Monitor / TV Battery Charger ADSL Modem Telecom / Networking Equipment Page 1 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Pin Assignments GND and Thermal Pad (connected to GND plane for better heat dissipation) NAME FUNCTION 1 POK Power Good Output. POK is an open drain output used to indicate the status of the output voltage. Connect the POK in to +5V through a pull-high resistor. 2 OCSET Current-Limit Threshold Setting Pin. There is an internal source current 10 uA through a resistor from OCSET pin to GND. This pin is used to monitor the voltage drop across the Drain and Source of the low-side MOSFET for current-limit. 3 EN Enable Pin of The PWM Controller. When the EN is above enable logic level, the Device is workable. When the EN is below shutdown logic level, the device is in shutdown and only low leakage current is taken from VCC and VIN. 4 FB Output Voltage Feedback Pin. This pin is connected to the resistive divider that set the desired output voltage. The POK, UVP, and OVP circuits detect this signal to report output voltage status. 5 RF This Pin is Allowed to Adjust The Switching Frequency. Connect a resistor RRF to set switching frequency as show in Table1. The pin also controls forced PWM mode or PFM/PWM auto skip mode selection. When RF pin is pulled down to GND, the device is in automatic PFM/PWM Mode. When RF pin is pulled high to POK, the device is in force PWM mode. 6 LGATE Output of The Low-side MOSFET Driver. Connect this pin to Gate of the low-side MOSFET. Swings from GND to VCC. 7 VCC Supply Voltage Input Pin for Control Circuitry. Connect +5V from the VCC pin to the GND pin. Decoupling at least 1u F of a MLCC capacitor from the VCC pin to the GND pin. 8 PHASE Junction Point of The High-side MOSFET Source, Output Filter Inductor and The Low-side MOSFET Drain. Connect this pin to the Source of the high-side MOSFET. PHASE serves as the lower supply rail for the UGATE high-side gate driver. 9 UGATE Output of The High-side MOSFET Driver. Connect this pin to Gate of the high-side MOSFET. 10 BOOT Supply Input for The UGATE Gate Driver and An Internal Level-shift Circuit. Connect to an external capacitor to create a boosted voltage suitable to drive a logic-level N-channel MOSFET. PIN NO Exposed Pad GND E-CMOS Corp. (www.ecmos.com.tw) Signal Ground for The IC Page 2 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Ordering Information Part Number Package Marking EC3228NNFTR TDFN3x3-10 3228 LLLL Marking Information 1. LLLL：Lot No Functional Block Diagram E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Absolute Maximum Ratings Symbol VCC VBOOT-GND VBOOT Parameter VCC Supply Voltage (VCC to GND) BOOT Supply Voltage (BOOT to GND) BOOT Supply Voltage (BOOT to PHASE) All Other Pins (POK, OCSET, EN, FB, and RF to GND) UGATE Voltage (UGATE to PHASE)<400ns Pulse Width>400ns Pulse Width LGATE Voltage (LGATE to GND)<400ns Pulse Width>400ns Pulse Width Rating -0.3 ~ 7 -0.3 ~ 35 -0.3 ~ 7 -0.3 ~ VCC+0.3 -5 ~ VBOOT+0.3 Unit V V V V -0.3 ~ VBOOT+0.3 V -5 ~ VCC+0.3 -0.3 ~ VCC+0.3 -5 ~ 35 V VPHASE PHASE Voltage (PHASE to GND)<400ns Pulse Width>400ns Pulse Width TJ TSTG Maximum Junction Temperature Storage Temperature 150 -65 ~ 150 ℃ ℃ TSDR Maximum Soldering Temperature,10 Seconds 260 ℃ V -1 ~ 32 Note: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Recommended Operating Conditions Symbol Parameter Range Unit VIN Converter Input Voltage 1.8 ~32 V VCC VCC Supply Voltage 4.5 ~ 5.5 V VOUT Converter Output Voltage 0.7 ~ 5.5 V IOUT Converter Output Current ~ 25 A TA Ambient Temperature -40 ~ 85 ℃ TJ Junction Temperature -40 ~ 125 ℃ Note: Refer to the typical application circuit. Thermal Characteristics Symbol Parameter θJA Thermal Resistance-Junction to Ambient 3mmx3mm TDFN-10 Typical Value 55 Unit °C/W Note: θJA is measured with the component mounted on a high effective the thermal conductivity test board in free air. The exposed pad of package is soldered directly on the PCB. E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Electrical Characteristics Refer to the typical application circuit. These specifications apply over VVCC = 12V, TA = -40°C to 85°C, unless otherwise noted. Typical values are at TA = 25°C. Symbol Parameter EC3228 Test Conditions Min. Unit Typ. Max. VOUT AND VFB VOLTAGE VOUT Output Voltage VREF Reference Voltage Adjustable output range 0.7 - o TA = 25 C o o TA = 0 C ~ 85 C Regulation Accuracy o o TA = -40 C ~ 85 C 5.5 V 0.7 - V -0.5 - +0.5 % -0.8 - +0.8 % -1.0 - +1.0 % IFB FB Input Bias Current FB = 0.7V - 0.02 TDIS VOUT Discharge Time EN low to FB = 0V - 12 0.1 uA - ms SUPPLY CURRENT IVCC VCC Input Bias Current VCC Current, PWM, EN = 5V, VFB = 0.735V, PHASE = 0.5V - 250 IVCC_SHDN VCC Shutdown Current EN = GND, VCC = 5V - 0 520 uA 1 . SWITCHING FREQUENCY AND SUTY AND INTERNAL SOFT-START FSW Switching Frequency , TA = 25 C, VIN=8V, VOUT =1.1V, IOUT=10A RRF = 200k , TA = 25 C, VIN=8V, VOUT =1.1V, IOUT=10A RRF = 100k RRF = 39k 266 290 0 314 312 340 368 349 380 411 395 430 465 80 110 140 ns o RRF = 470k uA o kHz o , TA = 25 C, VIN=8V, VOUT =1.1V, IOUT=10A o , TA = 25 C, VIN=8V, VOUT =1.1V, IOUT=10A TON(MIN) Minimum On Time TOFF(MIN) Minimum Off Time VFB = 0.65V, VPHASE = -0.1V, OCSET = OPEN 350 450 550 ns Internal Soft-Start Time EN High to VOUT Regulation (95%) 0.7 1.0 1.3 ms TSS GATE DRIVER UGATE Pull-Up Resistance BOOT-UGATE = 0.5V - 1.5 3 UGATE Sink Resistance UGATE-PHASE = 0.5V - 0.7 1.8 LGATE Pull-Up Resistance PVCC-LGATE = 0.5V - 1.0 2.2 LGATE Sink Resistance LGATE-GND = 0.5V - 0.5 1.2 UGATE to LGATE Dead-Time UGATE falling to LGATE rising - 20 - LGATE to UGATE Dead-Time LGATE falling to UGATE rising - 20 0.5 ns - ns BOOTSTRAP SWITCH VF Ron VVCC - VBOOT-GND, IF = 10mA - IR Reverse Leakage VBOOT-GND = 30V, VPHASE = 25V, VVCC = 5V - 0.8 - V 0.5 uA VCC POR THRESHOLD VVCC_THR Rising VSS POR Threshold 4.2 VCC POR Hysteresis 4.35 - 4.45 100 V - mV - V CONTROL INPUTS EN Voltage Threshold E-CMOS Corp. (www.ecmos.com.tw) Enable 1.8 - Shutdown - - Page 5 of 16 0.5 V 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Electrical Characteristics(Cont.) Symbol Parameter EC3228 Test Conditions Min. Unit Typ. Max. CONTROL INPUTS (CONT.) EN Leakage EN = 0V - Forced PWM Mode RF Setting Threshold 0.1 1.8 1.0 uA - PFM/PWM Auto Skip Mode - - - V 0.5 V POWER-OK INDICATOR POK in from Lower (POK Goes High) VPOK IPOK POK Threshold 87 90 POK Low Hysteresis (POK Goes Low) - POK out from Normal (POK Goes Low) 120 93 125 POK Leakage Current VPOK = 5V POK Sink Current VPOK = 0.5V 2.5 7.5 POK Enable Delay Time EN High to POK High 1.4 2.0 2.6 10 11 - % 3 0.1 - % 130 % 1.0 uA - mA ms CURRENT SENSE IOCSET TCIOCSET VROCSET IOCSET OCP Threshold IOCSET Sourcing IOCSET Temperature Coefficient On The Basis of 25°C Current-Limit Threshold Setting VOCSET-GND Voltage, Over All Range Temperature Over Current-Limit (VOCSET-GND-VGND-PHASE) Voltage, VOCSET-GND=60mV Comparator Offset Zero Crossing Comparator 9 VGND-PHASE Voltage, EN=3.3V - 4500 ppm/o C V 10 mV 0.5 10.5 mV 70 80 - 0 -9.5 - 1.6 0.24 -10 uA Offset PROTECTION VUV UVP Threshold 3 - UVP Debounce Interval - 16 - EN High to UVP Workable OVP Rising Threshold OVP Propagation Delay TOTR % - UVP Enable Delay VOVR 60 UVP Hysteresis VFB Rising, DV=10mV 1.4 2 2.6 120 125 130 % us ms % - 1.5 - OTP Rising Threshold (Note 4) - 140 - ℃ OTP Hysteresis (Note 4) - 25 - ℃ C Note : Guaranteed by design, not production tested. E-CMOS Corp. (www.ecmos.com.tw) us C Page 6 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Typical Operating Characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 7 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Typical Operating Characteristics(Cont.) E-CMOS Corp. (www.ecmos.com.tw) Page 8 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Typical Application Circuit E-CMOS Corp. (www.ecmos.com.tw) Page 9 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Function Description Constant-On-Time PWM Controller with Input Feed-Forward The constant-on-time control architecture is a pseudo-fixed frequency with input voltage feed-forward. This architecture elies on the output filter capacitor’s effective series esistance (ESR) to act as a current-sense resistor, so the output ripple voltage provides the PWM Forced-PWM Mode ramp signal. In PFM operation, the high-side switch on-time controlled The RF pin should be pulled high to POK and the converter is in by the on-time generator is determined solely by a one shot whose forced-PWM operation mode. The Forced-PWM mode disables the pulse width is inversely proportional to input voltage and directly zero-crossing comparator, which truncates the low-side switch on-time proportional to output voltage. In PWM operation, the high-side switch at the inductor current zero crossing. This causes the low-side on-time is determined by a switching frequency control circuit in the gate-drive waveform to become the complement of the high-side gate on-time generator block. drive waveform. This in turn causes the inductor current to reverse at The switching frequency control circuit senses the switching frequency light loads while UGATE maintains a duty factor of VOUT/VIN. The of the high-side switch and keeps regulating it at a constant frequency benefit of Forced-PWM mode is to keep the switching frequency fairly in PWM mode. The design improves the frequency variation and is constant. The Forced-PWM mode is the most useful for reducing audio more outstanding than a conventional constant-on-time controller, frequency noise, improving load-transient response, and providing which has large switching frequency variation over input voltage, sink-current capability for dynamic output voltage adjustment. output current, and temperature. Both in PFM and PWM, the on-time Power-On-Reset generator, which senses input voltage on PHASE pin, provides very fast A Power-On-Reset (POR) function is designed to prevent wrong logic on-time response to input line transients. controls when the VCC voltage is low. The POR function continually Another one-shot sets a minimum off-time (450ns,typical). The on-time monitors the bias supply voltage on the VCC pin if at least one of the one-shot is triggered if the error comparator is high, the low-side switch enable pins is set high. When the rising VCC voltage reaches the rising current is below the current-limit threshold, and the minimum off-time VCC POR Threshold (4.35V, typical), the POR signal goes high and the one shot has timed out. chip initiates soft-start operations. There is almost no hysteresis to POR Pulse-Frequency Modulation (PFM) voltage threshold (about 100mV typical). When VCC voltage drops When VRF is below the RF low threshold (0.5V, maximum),the lower than 4.25V (typical), the POR disables the chip. converter is in automatic PFM/PWM operation mode. In PFM mode, an EN Pin Control automatic switchover to pulse-frequency modulation (PFM) takes place When VEN is above the EN high threshold (1.8V, typical), the converter at light loads. This switchover is affected by a comparator that is enabled. When VEN is below the EN low threshold (0.5V, typical), the truncates the low-side switch on-time at the inductor current zero chip is in the shutdown and only low leakage current is taken from VCC. crossing. This mechanism causes the threshold between PFM and PWM Digital Soft-Start operation to coincide with the boundary between continuous and The EC3228 integrates digital soft-start circuits to ramp up the output discontinuous inductor-current operation (also known as the critical voltage of the converter to the programmed regulation set point at a conduction point).The on-time of PFM is given by: predictable slew rate. The slew rate of output voltage is internally controlled to limit the inrush current through the output capacitors during soft start process. The figure 1 shows soft-start sequence. When Where FSW is the nominal switching frequency of the converter in the EN pin is pulled above the rising EN threshold voltage, the device PWM mode. initiates a soft-start process to ramp-up the output voltage. The The load current at handoff from PFM to PWM mode is given by: soft-start interval is 1ms (typical)and independent of the UGATE E-CMOS Corp. (www.ecmos.com.tw) Page 10 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Function Description(Cont.) switching frequency. Under-Voltage Protection (UVP) In the operational process, if a short-circuit occurs, the output voltage will drop quickly. When load current is bigger than current-limit threshold value, the output voltage will fall out of the required regulation range. The under voltage protection circuit continually monitors the FB voltage after soft-start is completed. If a load step is strong enough to pull the output voltage lower than the under voltage threshold, the under-voltage threshold is 70% of the nominal output voltage, the internal UVP delay counter starts to count. After 16s de-bounce time, the device turns off both high-side and low-side MOSEFET with latched and starts a soft-stop process to shut down the output gradually. Toggling enable pin to low or recycling VCC, will clear the latch and bring the chip back to operation. Over-Voltage Protection (OVP) During soft-start stage before the PGOOD pin is ready, the The over-voltage function monitors the output voltage by FB pin. When under-voltage protection is prohibited. The over-voltage and the FB voltage increases over 125% of the reference voltage due to the current-limit protection functions are enabled. If the output capacitor high-side MOSFET failure or for other reasons, the over-voltage has residue voltage before start-up, both low-side and high-side protection comparator designed with a 1.5s noise filter will force the MOSFETs are in off-state until the internal digital soft-start voltage low side MOSFET gate driver fully turn on and latch high. This action equals to the VFB voltage. This will ensure that the output voltage starts actively pulls down the output voltage. This OVP scheme only clamps from its existing voltage level. In the event of under-voltage, the voltage overshoot and does not invert the output voltage when over-temperature, or shutdown, the chip enables the soft-stop otherwise activated with a continuously high output from low-side function. The soft-stop function discharges the output voltage to the Over-Voltage Protection (OVP) (Cont.) GND. The duration of the discharge time is 8ms. MOSFET driver. It’s a common problem for OVP schemes with a latch. Power OK Indicator Once an over-voltage fault condition is set, it can only be reset by The EC3228 features an open-drain POK pin to indicate output toggling EN, VCC power-on-reset signal. regulation status. In normal operation, when the output voltage rises Current-Limit 90% of its target value, the POK goes high after 63us internal delay. The current-limit circuit employs a “valley” current-sensing algorithm When the output voltage outruns 70% or 125% of the target voltage, (See Figure 2). The EC3228 uses the low-side MOSFET’s RDS(ON) of the POK signal will be pulled low immediately. synchronous rectifier as a current-sensing element. If the magnitude of Since the FB pin is used for both feedback and monitoring purposes, the the current-sense signal at PHASE pin is above the current limit output voltage deviation can be coupled directly to the FB pin by the threshold, the PWM is not allowed to initiate a new cycle. The actual capacitor in parallel with the voltage divider as shown in the typical peak current is greater than the current limit threshold by an amount applications. In order to prevent false POK from dropping, capacitors equals to the inductor ripple current. Therefore, the exact current-limit need to parallel at the output to confine the voltage deviation with characteristic and maximum load capability are the functions of the severe load step transient. sense resistance, inductor value, and input voltage E-CMOS Corp. (www.ecmos.com.tw) Page 11 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Function Description(Cont.) Programming the On-Time Control and PWM Switching Frequency The EC3228 does not use a clock signal to produce PWM. The device uses the constant-on-time control architecture to produce pseudo-fixed frequency with input voltage feed-forward. The on-time pulse width is proportional to output voltage VOUT and inverses proportional to input voltage VIN. The switching frequency is selectable from four preset values by a resistor connected to RF pin as shown in Table1. EC3228 doesn’t have VIN pin to calculate on-time pulse width. Therefore, monitoring VPHASE voltage as input voltage to calculate The PWM controller uses the low-side MOSFETs on-resistance RDS(ON) on-time when the high-side MOSFET is turned on. And then, use the to monitor the current for protection against shortened outputs. The relationship between on time and duty cycle to obtain the switching MOSFET’s RDS(ON) is varied by temperature and gate to source voltage, frequency. the user should determine the maximum RDS(ON) in manufacture’s datasheet. The OCSET pin can source 10A through an external resistor for adjusting current-limit threshold. The voltage at OCSET pin is equal to 10A x ROCSET. The relationship between the sampled voltage VOCSET and the current-limit threshold ILIMIT is given by: Where ROCSET is the resistor of current-limit setting threshold. RDS(ON) is the low side MOSFETs conducive resistance. ILIMIT is the setting current-limit threshold. ILIMIT can be expressed as IOUT minus half of peak-to-peak inductor current. The PCB layout guidelines should ensure that noise and DC errors do not corrupt the current-sense signals at PHASE. Place the hottest power MOSEFTs as close to the IC as possible for best thermal coupling. When combined with the under-voltage protection circuit, this current-limit method is effective in almost every circumstance. Over-Temperature Protection (OTP) When the junction temperature increases above the rising threshold temperature TOTR, the IC will enter the over-temperature protection state that suspends the PWM, which forces the UGATE and LGATE gate drivers output low. The thermal sensor allows the converters to start a start-up process and regulate the output voltage again after the junction temperature cools by 25℃. The OTP is designed with a 25℃ hysteresis to lower the average TJ during continuous thermal overload conditions, which increases lifetime of the EC3228. E-CMOS Corp. (www.ecmos.com.tw) Page 12 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Application Information Output Voltage Setting This results in a larger output ripple voltage. Besides, the inductor The output voltage is adjustable from 0.7V to 5.5V with a needs to have low DCR to reduce the loss of efficiency. resistor-divider connected with FB, GND, and converter’s output. Using Output Capacitor Selection 1% or better resistors for the resistor-divider is recommended. The Output voltage ripple and the transient voltage deviation are factors output voltage is determined by: which have to be taken into consideration when selecting an output capacitor. Higher capacitor value and lower ESR reduce the output ripple and the load transient drop. Therefore, selecting high Where 0.7 is the reference voltage, RTOP is the resistor connected from performance low ESR capacitors is recommended for switching converter’s output to FB, and RGND is the resistor connected from FB regulator applications. In addition to high frequency noise related to to GND. Suggested RGND is in the range from 1k to 20k. To prevent MOSFET turn-on and turnoff, the output voltage ripple includes the stray pickup, locate resistors RTOP and RGND close to EC3228. capacitance voltage drop VCOUT and ESR voltage drop VESR caused Output Inductor Selection by the AC peak-to-peak inductor’s current. These two voltages can be The duty cycle (D) of a buck converter is the function of the input represented by: voltage and output voltage. Once an output voltage is fixed, it can be written as: These two components constitute a large portion of the total output The inductor value (L) determines the inductor ripple current, IRIPPLE, voltage ripple. In some applications, multiple capacitors have to be and affects the load transient response. Higher inductor value reduces paralleled to achieve the desired ESR value. If the output of the the inductor’s ripple current and induces lower output ripple voltage. converter has to support another load with high pulsating current, The ripple current and ripple voltage can be approximated by: more capacitors are needed in order to reduce the equivalent ESR and suppress the voltage ripple to a tolerable level. A small decoupling capacitor (1F) in parallel for bypassing the noise is also recommended, Where FSW is the switching frequency of the regulator. Although the and the voltage rating of the output capacitors are also must be inductor value and frequency are increased and the ripple current and considered. To support a load transient that is faster than the switching voltage are reduced, a tradeoff exists between the inductor’s ripple frequency, more capacitors are needed for reducing the voltage current and the regulator load transient response time. excursion during load step change. Another aspect of the capacitor A smaller inductor will give the regulator a faster load transient selection is that the total AC current going through the capacitors has to response at the expense of higher ripple current. Increasing the be less than the rated RMS current specified on the capacitors in order switching frequency (FSW) also reduces the ripple current and voltage, to prevent the capacitor from over-heating. but it will increase the switching loss of the MOSFETs and the power Input Capacitor Selection dissipation of the converter. The maximum ripple current occurs at the The input capacitor is chosen based on the voltage rating and the RMS maximum input voltage. A good starting point is to choose the ripple current rating. For reliable operation, selecting the capacitor voltage current to be approximately 30% of the maximum output current. Once rating to be at least 1.3 times higher than the maximum input voltage. the inductance value has been chosen, selecting an inductor which is The maximum RMS current rating requirement is approximately capable of carrying the required peak current without going into IOUT/2,where IOUT is the load current. During power-up, the input saturation. In some types of inductors, especially core that is made of capacitors have to handle great amount of surge current. For low-duty ferrite, the ripple current will increase abruptly when it saturates. notebook applications, ceramic capacitor is recommended. The E-CMOS Corp. (www.ecmos.com.tw) Page 13 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Application Information(Cont.) capacitors must be connected between the drain of high-side MOSFET Note that both MOSFETs have conduction losses while the high-side and the source of low-side MOSFET with very low-impedance PCB MOSFET includes an additional transition loss. The switching interval, layout. tSW, is the function of the reverse transfer capacitance CRSS. The MOSFET Selection (1+TC) term is a factor in the temperature dependency of the RDS(ON) The application for a notebook battery with a maximum voltage of 24V, and can be extracted from the “RDS(ON) vs. Temperature” curve of the at least a minimum 30V MOSFETs should be used. The design has to power MOSFET. trade off the gate charge with the RDS(ON) of the MOSFET: Layout Consideration For the low-side MOSFET, before it is turned on, the body diode has In any high switching frequency converter, a correct layout is important been conducting. The low-side MOSFET driver will not charge the miller to ensure proper operation of the regulator. With power devices capacitor of this MOSFET. In the turning off process of the low-side switching at higher frequency, the resulting current transient will cause MOSFET, the load current will shift to the body diode first. The high voltage spike across the interconnecting impedance and parasitic circuit dv/dt of the phase node voltage will charge the miller capacitor through elements. As an example, consider the turn-off transition of the PWM the low-side MOSFET driver sinking current path. This results in much MOSFET. Before turn-off condition, the MOSFET is carrying the full load less switching loss of the low side MOSFETs. The duty cycle is often very current. During turn-off, current stops flowing in the MOSFET and is small in high battery voltage applications, and the low-side MOSFET will freewheeling by the low side MOSFET and parasitic diode. Any parasitic conduct most of the switching cycle; therefore, when using smaller inductance of the circuit generates a large voltage spike during the RDS(ON) of the low-side MOSFET, the converter can reduce power loss. switching interval. In general, using short and wide printed circuit traces The gate charge for this MOSFET is usually the secondary consideration. should minimize interconnecting impedances and the magnitude of The high-side MOSFET does not have this zero voltage switching voltage spike. Besides, signal and power grounds are to be kept condition; in addition, because it conducts for less time compared to separating and finally combined using ground plane construction or the low-side MOSFET, the switching loss tends to be dominant. Priority single point grounding. The best tie-point between the signal ground should be given to the MOSFETs with less gate charge, so that both the and the power ground is at the negative side of the output capacitor on gate driver loss and switching loss will be minimized. each channel, where there is less noise. Noisy traces beneath the IC are The selection of the N-channel power MOSFETs are not recommended. Below is a checklist for your layout: determined by the RDS(ON), reversing transfer capacitance ·Keep the switching nodes (UGATE, LGATE, BOOT, and PHASE) away from (CRSS) and maximum output current requirement. sensitive small signal nodes since these nodes are fast moving signals. The losses in the MOSFETs have two components: conduction loss and Therefore, keep traces to these nodes as short as possible and there transition loss. For the high-side and low-side MOSFETs, the losses are should be no other weak signal traces in parallel with theses traces on approximately given by the following equations: any layer. ·The signals going through theses traces have both high dv/dt and high di/dt with high peak charging and discharging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be short Where and wide. IOUT is the load current ·Place the source of the high-side MOSFET and the drain of the low-side TC is the temperature dependency of RDS(ON) MOSFET as close as possible. Minimizing the impedance with wide FSW is the switching frequency tSW is the switching interval D is the duty cycle E-CMOS Corp. (www.ecmos.com.tw) Page 14 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Application Information(Cont.) layout plane between the two pads reduces the voltage bounce of the node. In addition, the large layout plane between the drain of the MOSFETs (VIN and PHASE nodes) can get better heat sinking. ·The GND is the current sensing circuit reference ground and also the power ground of the LGATE lowside MOSFET. On the other hand, the GND trace should be a separate trace and independently go to the source of the low-side MOSFET. Besides, the current sense resistor should be close to OCSET pin to avoid parasitic capacitor effect and noise coupling. ·Decoupling capacitors, the resistor-divider, and boot capacitor should be close to their pins. (For example ,place the decoupling ceramic capacitor close to the drain of the high-side MOSFET as close as possible.) ·The input bulk capacitors should be close to the drain of the high-side MOSFET, and the output bulk capacitors should be close to the loads. The input capacitor’s ground should be close to the grounds of the output capacitors and low-side MOSFET. ·Locate the resistor-divider close to the FB pin to minimize the high impedance trace. In addition, FB pin traces can’t be close to the switching signal traces(UGATE, LGATE, BOOT, and PHASE). E-CMOS Corp. (www.ecmos.com.tw) Page 15 of 16 3G15N-Rev.P002 High-Performance PWM Controller EC3228 Package Information TDFN3x3-10 E-CMOS Corp. (www.ecmos.com.tw) Page 16 of 16 3G15N-Rev.P002