97 CY7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable (CE) and Write Enable (WE) inputs are both LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A17). • CMOS for optimum speed/power • Low active power — 880 mW Reading the device is accomplished by taking chip enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the data output (DOUT) pin. • Low standby power — 220 mW • TTL-compatible inputs and outputs The output pin stays in a high-impedance state when Chip Enable (CE) is HIGH or Write Enable (WE) is LOW. • Automatic power-down when deselected The CY7C197 utilizes a die coat to insure alpha immunity. Functional Description The CY7C197 is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is pro- Logic Block Diagram Pin Configurations DI DIP/SOJ Top View SENSE AMPS ROW DECODER A13 A14 A15 A16 A17 A0 A1 A2 A3 A4 1024 x 256 ARRAY COLUMN DECODER DO POWER DOWN DOUT WE GND A2 A1 A0 VCC A 17 VCC A17 A16 A15 A14 A13 A12 A11 A10 A9 DIN CE 1 24 2 23 3 22 4 21 5 20 7C197 6 19 18 7 8 17 9 16 10 15 14 11 12 13 NC A3 A4 A5 A6 A7 A8 DOUT NC 3 2 1 28 27 4 26 NC 5 25 A16 6 24 A15 7 23 A14 8 7C197 22 A13 9 21 A12 10 20 A11 11 19 A10 12 18 NC 1314151617 WE GND CE DIN A9 A0 A1 A2 A3 A4 A5 A6 A7 A8 INPUT BUFFER LCC Top View C197-2 C197-3 CE A5 A6 A7 A8 A9 A10 A11 A12 WE C197-1 Selection Guide 7C197-12 7C197-15 7C197-20 7C197-25 7C197-35 7C197-45 Maximum Access Time (ns) 12 15 20 25 35 45 Maximum Operating Current (mA) 150 140 135 95 95 Maximum Standby Current (mA) 30 30 30 30 30 Cypress Semiconductor Corporation Document #: 38-05049 Rev. ** • 3901 North First Street • San Jose • 30 CA 95134 • 408-943-2600 Revised August 24, 2001 CY7C197 DC Input Voltage[1].................................... −0.5V to VCC + 0.5V Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature .....................................−65°C to +150°C Ambient Temperature with Power Applied..................................................−55°C to +125°C Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA Operating Range Supply Voltage to Ground Potential (Pin 24 to Pin 12).................................................−0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................... −0.5V to VCC + 0.5V Range Ambient Temperature VCC Commercial 0°C to +70°C 5V ± 10% Electrical Characteristics Over the Operating Range 7C197-12 Parameter Description Test Conditions Min. Max. 7C197-15 Min. Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = −4.0 mA VOL Output LOW Voltage VCC = Min. VIH Input HIGH Voltage 2.2 VCC + 0.3V VIL Input LOW Voltage[1] −0.5 IIX Input Load Current GND < VI < VCC −5 IOZ Output Leakage Current GND < VO < VCC, Output Disabled −5 +5 µA IOS Output Short Circuit Current[2] VCC = Max., VOUT = GND −300 −300 mA ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 150 140 mA ISB1 Automatic CE Power-Down Current—TTL Inputs[3] Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX 30 30 mA ISB2 Automatic CE Power-Down Current—CMOS Inputs[3] Max. VCC, CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V 10 10 mA 2.4 IOL =12.0 mA 2.4 0.4 V 0.4 V 2.2 VCC +0.3V V 0.8 −0.5 0.8 V +5 −5 +5 µA +5 −5 Notes: 1. V(min.) = −2.0V for pulse durations of less than 20 ns. 2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 3. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given. Document #: 38-05049 Rev. ** Page 2 of 10 CY7C197 Electrical Characteristics Over the Operating Range (continued) 7C197-20 Parameter Description Test Conditions Min. 7C197-25, 35, 45 Max. Min. VOH Output HIGH Voltage VCC = Min., IOH = −4.0 mA VOL Output LOW Voltage VCC = Min. VIH Input HIGH Voltage 2.2 VCC + 0.3V VIL Input LOW Voltage[1] −0.5 IIX Input Load Current GND < VI < VCC IOZ Output Leakage Current GND < VO < VCC, Output Disabled IOS Output Short Circuit Current[2] VCC = Max., VOUT = GND ICC VCC Operating Supply Current ISB1 ISB2 2.4 IOL =12.0mA Max. Unit 2.4 V 0.4 0.4 V 2.2 VCC + 0.3V V 0.8 −0.5 0.8 V −5 +5 −5 +5 µA −5 +5 −5 +5 µA −300 −300 mA VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 135 95 mA Automatic CE Power Down Current—TTL Inputs[3] Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX 30 30 mA Automatic CE Power-Down Current—CMOS Inputs[3] Max. VCC, CE > VCC − 0.3V, VIN > VCC − 0.3V or VIN < 0.3V 15 15 mA Capacitance[4] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. Unit 8 pF 10 pF TA = 25°C, f = 1 MHz, VCC = 5.0V AC Test Loads and Waveforms[5] R1 329 Ω R1 329 Ω 5V 5V OUTPUT ALL INPUT PULSES OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) R2 5 pF 202Ω (255Ω MIL) INCLUDING JIG AND SCOPE 3.0V R2 255Ω (255Ω MIL) (b) C197-4 10% 90% 90% 10% GND < tr < tr C197-5 Equivalent to: THÉVENIN EQUIVALENT 125Ω OUTPUT 1.90V Commercial Notes: 4. Tested initially and after any design or process changes that may affect these parameters. 5. tr = < 3 ns for the -12 and -15 speeds. tr = < 5 ns for the -20 and slower speeds. Document #: 38-05049 Rev. ** Page 3 of 10 CY7C197 Switching Characteristics Over the Operating Range[6] 7C197-12 Parameter Description Min. Max. 7C197-15 Min. Max. 7C197-20 Min. Max. 7C197-25 Min. Max. 7C197-35 Min. Max. 7C197-45 Min. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Output Hold from Address Change tACE CE LOW to Data Valid tLZCE CE LOW to Low Z[7] tHZCE CE HIGH to High Z[7, 8] tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 12 15 12 3 20 15 3 12 3 3 3 0 20 15 5 0 25 20 0 9 35 25 0 11 45 35 0 15 45 0 ns ns 15 0 25 ns ns 3 0 20 ns 3 3 0 20 45 3 3 0 15 35 3 3 7 12 25 ns ns 30 ns WRITE CYCLE[9] tWC Write Cycle Time 12 15 20 25 35 45 ns tSCE CE LOW to Write End 9 10 15 20 30 40 ns tAW Address Set-Up to Write End 9 10 15 20 30 40 ns tHA Address Hold from Write End 0 0 0 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 0 0 0 ns tPWE WE Pulse Width 8 9 15 20 25 30 ns tSD Data Set-Up to Write End 8 9 10 15 17 20 ns tHD Data Hold from Write End 0 0 0 0 0 0 ns tLZWE WE HIGH to Low Z[7] 2 2 3 3 3 3 ns tHZWE WE LOW to High Z[7,8] 7 7 0 10 0 11 0 15 0 15 ns Notes: 6. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device. 8. tHZCE and tHZWE are specified with CL = 5 pF as in part (b) in AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage. 9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. Document #: 38-05049 Rev. ** Page 4 of 10 CY7C197 Switching Waveforms Read Cycle No. 1 [10, 11] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID C197-6 Read Cycle No. 2 [10] tRC CE tACE tHZCE tLZCE DATA OUT VCC SUPPLY CURRENT HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tPD tPU ICC 50% 50% ISB C197-7 Write Cycle No.1 (WE Controlled) [9] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tSD DATA IN DATA VALID tHZWE DATA OUT tHD DATA UNDEFINED tLZWE HIGH IMPEDANCE C197-8 Notes: 10. WE is HIGH for read cycle. 11. Device is continuously selected, CE = VIL. Document #: 38-05049 Rev. ** Page 5 of 10 CY7C197 Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) [9, 12] tWC ADDRESS tSA tSCE CE tAW tHA tPWE WE tHD tSD DATA IN DATA OUT DATA VALID HIGH IMPEDANCE C197-9 Note: 12. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. Document #: 38-05049 Rev. ** Page 6 of 10 CY7C197 ICC 0.8 0.6 VIN =5.0V TA =25°C 0.4 0.2 ISB 0.0 4.0 4.5 5.0 5.5 1.0 0.8 0.6 VCC =5.0V VIN =5.0V 0.4 0.2 ISB 0.0 -55 6.0 25 125 AMBIENT TEMPERATURE(°C) SUPPLY VOLTAGE(V) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 1.4 1.6 1.3 1.4 NORMALIZED tAA NORMALIZED t AA NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.2 1.1 TA =25°C 1.0 0.9 0.8 4.0 4.5 5.0 5.5 1.2 1.0 VCC =5.0V 0.8 0.6 −55 6.0 120 100 80 VCC =5.0V TA =25°C 60 40 20 0 0.0 140 3.0 2.5 (ns) 25.0 DELTA tAA 20.0 2.0 1.5 1.0 15.0 VCC =4.5V TA =25°C 10.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE(V) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 120 100 80 60 VCC =5.0V TA =25°C 40 20 0 0.0 125 TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE(V) NORMALIZED I CC vs. CYCLE TIME 1.25 1.00 VCC =5.0V TA =25°C VIN =0.5V 0.75 5.0 0.5 0.0 0.0 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE AMBIENT TEMPERATURE(°C) SUPPLY VOLTAGE(V) NORMALIZED I PO 25 NORMALIZED I CC 1.0 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.4 ICC 1.2 OUTPUT SINK CURRENT (mA) SB 1.2 NORMALIZED I,CC I NORMALIZED I,CC I SB 1.4 NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE OUTPUT SOURCE CURRENT (mA) Typical DC and AC Characteristics 1.0 2.0 3.0 4.0 SUPPLY VOLTAGE (V) Document #: 38-05049 Rev. ** 5.0 0.0 0 200 400 600 800 1000 CAPACITANCE (pF) 0.50 10 20 30 40 CYCLE FREQUENCY (MHz) Page 7 of 10 CY7C197 CY7C197 Truth Table CE WE Input/Output Mode H X High Z Deselect/Power-Down L H Data Out Read L L Data In Write Ordering Information Speed (ns) 12 15 20 25 35 45 Ordering Code Package Name Package Type CY7C197-12PC P13 24-Lead (300-Mil) Molded DIP CY7C197-12VC V13 24-Lead Molded SOJ CY7C197-15PC P13 24-Lead (300-Mil) Molded DIP CY7C197-15VC V13 24-Lead Molded SOJ CY7C197-20PC P13 24-Lead (300-Mil) Molded DIP CY7C197-20VC V13 24-Lead Molded SOJ CY7C197-25PC P13 24-Lead (300-Mil) Molded DIP CY7C197-25VC V13 24-Lead Molded SOJ CY7C197-35PC P13 24-Lead (300-Mil) Molded DIP CY7C197-35VC V13 24-Lead Molded SOJ CY7C197-45PC P13 24-Lead (300-Mil) Molded DIP CY7C197-45VC V13 24-Lead Molded SOJ Document #: 38-05049 Rev. ** Operating Range Commercial Commercial Commercial Commercial Commercial Commercial Page 8 of 10 CY7C197 Package Diagrams 24-Lead (300-Mil) Molded DIP P13/P13A 51-85013-A 24-Lead (300-Mil) Molded SOJ V13 51-85030-A Document #: 38-05049 Rev. ** Page 9 of 10 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C197 Document Title: CY7C197 256K x 1 Static RAM Document Number: 38-05049 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 107151 09/10/01 SZV Change from Spec number: 38-00078 to 38-05049 Document #: 38-05049 Rev. ** Page 10 of 10