DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA315 Low-voltage stabistor Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistor BA315 FEATURES DESCRIPTION • Low-voltage stabilization Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. handbook, halfpage k APPLICATIONS a • Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages MAM246 Diodes are type branded. – Clipping – Clamping Fig.1 Simplified outline (SOD27; DO-35) and symbol. – Meter protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 5 IF continuous forward current − 100 mA Ptot total power dissipation − 350 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C 1996 Mar 21 Tamb = 25 °C 2 V Philips Semiconductors Product specification Low-voltage stabistor BA315 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS MIN. TYP. MAX. UNIT see Fig.2 IF = 0.1 mA 480 − 540 mV IF = 1 mA 590 − 660 mV IF = 5 mA 670 − 740 mV IF = 10 mA 710 − 790 mV IF = 100 mA 875 − 1050 mV 1500 nA IR reverse current VR = 5 V − − rdif differential resistance IF = 1 mA; f = 1 kHz − 50 − Ω IF = 10 mA; f = 1 kHz − 6 7 Ω − mV/K SF temperature coefficient IF = 1 mA − −2.1 Cd diode capacitance VR = 0 V; f = 1 MHz − − 3 pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 8 mm from the body 300 K/W Rth j-a thermal resistance from junction to ambient maximum lead length 600 K/W 1996 Mar 21 3 Philips Semiconductors Product specification Low-voltage stabistor BA315 GRAPHICAL DATA MBG520 102 handbook, halfpage IF (mA) (1) (2) 10 1 10−1 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) Tj = 25 °C. (1) Minimum values. (2) Maximum values. Fig.2 1996 Mar 21 Forward current as a function of forward voltage. 4 Philips Semiconductors Product specification Low-voltage stabistor BA315 PACKAGE OUTLINE andbook, full pagewidth 0.56 max 1.85 max 4.25 max 25.4 min 25.4 min MLA428 - 1 Dimensions in mm. Diodes are type branded. Fig.3 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 21 5