CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM8206JPT CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM8206JPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Maximum Drain Current - Continuous 6 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 24 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM8206JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA 1.5 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 0.5 VGS=4.5V, ID=6A 17 20 VGS=2.5V, ID=5.2A 23 30 7 VDS =10V, ID = 6A mΩ S 16 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd 15 VDS=10V, ID=6A 20 nC 3.4 VGS=4.5V 1.2 t on Turn-On Time V DD= 10V 20 40 tr Rise Time I D = 1.0A , VGS = 4.5 V 20 40 t off Turn-Off Time RGEN= 6 Ω 72 130 tf Fall Time 20 40 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.7A , VGS = 0 V (Note 1) (Note 2) 1.7 A 1.2 V