DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) ESD Protected up to 2KV "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability • • • • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate) D2 G1 S1 S2 G2 D1 SOT26 Top View Internal Schematic Top View ESD PROTECTED TO 2kV Ordering Information (Note 3) Part Number DMN2004DMK-7 Notes: Case SOT26 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NAB = Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) NAB YM NAB YM NEW PRODUCT Features Date Code Key Year 2006 Code T Month Code Jan 1 2007 U Feb 2 DMN2004DMK Document number: DS30937 Rev. 4 - 2 2008 V Mar 3 2009 W Apr 4 2010 X May 5 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 1 of 6 www.diodes.com November 2011 © Diodes Incorporated DMN2004DMK Maximum Ratings @TA = 25°C unless otherwise specified Characteristic NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) TA = 25°C TA = 85°C Steady State Pulsed Drain Current (Note 5) Thermal Characteristics Symbol VDSS VGSS Value 20 ±8 Units V V ID 540 390 mA IDM 1.5 A Symbol PD RθJA TJ, TSTG Value 225 556 -65 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 4. 5. 6. Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ 0.4 0.5 0.7 0.55 0.70 0.9 Ω |Yfs| VSD 200 0.5 ⎯ ⎯ ⎯ 1.4 ms V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. Pulse width ≤10μS, Duty Cycle ≤1%. Short duration pulse test used to minimize self-heating effect. DMN2004DMK Document number: DS30937 Rev. 4 - 2 2 of 6 www.diodes.com November 2011 © Diodes Incorporated ID, DRAIN CURRENT (A) NEW PRODUCT DMN2004DMK 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 0.1 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID , DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DMK Document number: DS30937 Rev. 4 - 2 3 of 6 www.diodes.com November 2011 © Diodes Incorporated NEW PRODUCT DMN2004DMK Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DMK Document number: DS30937 Rev. 4 - 2 4 of 6 www.diodes.com VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation November 2011 © Diodes Incorporated DMN2004DMK Package Outline Dimensions NEW PRODUCT A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J D L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMN2004DMK Document number: DS30937 Rev. 4 - 2 5 of 6 www.diodes.com November 2011 © Diodes Incorporated DMN2004DMK IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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