DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES PINNING - SOT343 • High power gain PIN DESCRIPTION • High efficiency 1 collector • Small size discrete power amplifier 2 emitter • 1.9 GHz operating area 3 base • Gold metallization ensures excellent reliability 4 emitter • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. handbook, halfpage 4 3 1 2 • Driver for DCS 1800. DESCRIPTION Top view NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. MBK523 Marking code: S4 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, δ < 1 : 2; tp = 5 ms 1996 Jun 04 f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) 1.9 3.6 400 ≥6 ≥60 2 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA Ptot total power dissipation − 760 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 60 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 60 °C; Ptot = 760 mW; note 1 VALUE UNIT 150 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector tab. MGD411 103 handbook, full pagewidth Zth j-s (K/W) 102 δ= 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0.1 tp δ= T P t tp T 1 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values. 1996 Jun 04 3 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. − 20 UNIT V(BR)CBO collector-base breakdown voltage IC = 0.1 mA; open emitter V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; open base 8 − V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; open collector 2.5 − V ICES collector cut-off current VCE = 8 V; VBE = 0 − 100 µA hFE DC current gain VCE = 5 V; IC = 100 mA 25 − Cc collector capacitance VCB = 3.6 V; IE = ie = 0; f = 1 MHz − 5 pF Cre feedback capacitance VCE = 3.6 V; IC = 0; f = 1 MHz − 4 pF APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, δ < 1 : 2; tp = 5 ms f (GHz) VCE (V) ICQ (mA) PL (mW) Gp (dB) ηc (%) 1.9 3.6 1 400 ≥6 ≥60 Ruggedness in class-AB operation The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions at f = 1.9 GHz: tp = 1.25 ms, δ = 1 : 8 at VCE = 7 V and tp = 5 ms, δ = 1 : 2 at VCE = 4.5 V. MGD412 8 handbook, halfpage Gp (dB) 0 ηc (%) dim (dBc) 70 −20 4 50 −40 2 30 −60 10 800 PL (mW) −80 ηC 80 handbook, halfpage ηC (%) Gp 6 MGD552 90 60 dim 0 0 200 400 600 40 20 ηc 0 10 0 30 20 Po(av) (dBm) VCE = 3.6 V; Icϕ = 1 mA; f1 = 1990.0 MHz; f2 = 1990.1 MHz; δ = 1 : 8; tp = 625 µs. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; δ < 1 : 8; tp = 1.25 ms. Fig.3 1996 Jun 04 Fig.4 Power gain and efficiency as functions of load power; typical values. 4 Two tone intermodulation distortion and efficiency as functions of average output power; typical values. Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X List of components used in test circuit (see Figs 5 and 6) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C8, C9, C10 multilayer ceramic chip capacitor; note 1 24 pF C2, C3 multilayer ceramic chip capacitor; note 1 2 pF C4 multilayer ceramic chip capacitor; note 1 1.2 pF C5 multilayer ceramic chip capacitor; note 1 0.2 pF C6, C7, multilayer ceramic chip capacitor; note 1 1.3 pF C11, C12, C13 multilayer ceramic chip capacitor; note 1 10 nF C14, C15 electrolytic capacitor 470 µF; 10 V L1 stripline; note 2 length 22.5 mm width 0.9 mm L2 stripline; note 2 length 6 mm width 0.9 mm L3 stripline; note 2 length 1 mm width 0.9 mm L4 stripline; note 2 length 2.5 mm width 0.9 mm L5 stripline; note 2 length 4.5 mm width 0.9 mm L6 stripline; note 2 length 24.5 mm width 0.9 mm L7 stripline; note 2 length 20 mm width 0.9 mm L8 stripline; note 2 length 10.5 mm width 0.9 mm L9 stripline; note 2 length 4.4 mm width 0.4 mm L10 stripline; note 2 length 19.7 mm width 0.4 mm L11, L12 RF choke 1 µH R1 metal film resistor 78.7 Ω; 0.4 W R2 metal film resistor 38.3 Ω; 0.4 W R3 metal film resistor 10 Ω; 0.4 W T1 bias transistor BC548; note 3 CATALOGUE N0. 2222 032 14152 4330 030 36301 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric εr = 6.15; tan δ = 0.0019; thickness = 0.64 mm; copper cladding = 35 µm. 3. Or equivalent (VBE = 0.65 V at Tamb = 25 °C). 1996 Jun 04 5 Philips Semiconductors Product specification NPN 2 GHz power transistor V bias handbook, full pagewidth BFG11W/X R1 VS R2 T1 C14 , , , , , ,,,,, C13 L11 R3 C11 C12 L9 C10 C9 L7 C1 L1 L2 C2, C3 L3 C4 ,, ,, ,,,,, L12 L10 50 Ω input C15 L8 DUT L4 C5 L5 L6 C8 50 Ω output C6, C7 MGD413 Fig.5 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1996 Jun 04 6 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X handbook, full pagewidth 60 Collector Base 70 Vbias R1 T1 R2 L11 C11 C14 R3 L10 C13 C12 C9 C15 + Vs L12 L9 L7 C10 L8 C2 C3 C1 L1 Base L2 C4 C5 L3 L4 L5 C6 C7 C8 Collector L6 Dimensions in mm. Fig.6 Component layout for common-emitter test circuit. 1996 Jun 04 7 MGD414 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X MGD415 12 Zi (Ω) 10 MGD416 20 handbook, halfpage handbook, halfpage ZL (Ω) 16 xi RL 8 12 6 8 4 ri 4 2 XL 0 1800 1850 1900 1950 0 1800 2000 1850 1900 f (MHz) VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW. Fig.7 Fig.8 Input impedance as a function of frequency (series components), typical values. handbook, halfpage Zi Fig.9 1996 Jun 04 2000 f (MHz) VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW. ZL 1950 MBA451 Definition of transistor impedance. 8 Load impedance as a function of frequency (series components), typical values. Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X PACKAGE OUTLINE handbook, full pagewidth 0.2 M A 0.4 0.2 0.2 M B 4 3 1.00 max 0.2 A 1.35 1.15 2.2 2.0 1 0.7 0.5 0.3 0.1 2 0.25 0.10 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.10 SOT343. 1996 Jun 04 0.1 max 9 MSB374 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 04 10 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X NOTES 1996 Jun 04 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 805 4455, Fax. +61 2 805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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