isc Product Specification isc Silicon NPN Power Transistor BUX22 DESCRIPTION ·Fast Switching Speed ·High DC Current Gain-hFE=20~60@IC = 10A ·Low Saturation VoltageVCE(sat)= 1.0V(Max)@ IC = 10A APPLICATIONS ·Designed for use in motor control and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEX Collector-Emitter Voltage (VBE= -1.5V) 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 350 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 0.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification isc Silicon NPN Power Transistor BUX22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS )* Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 10A; IB=1.0A 1.0 V VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 20A; IB=2.5A 1.5 V VBE(sat)* Base-Emitter Saturation Voltage IC= 20A; IB=2.5A 1.5 V ICEO Collector Cutoff Current VCE=200V; IB=0 3 mA ICEX Collector Cutoff Current VCE= 300V; VBE(off)= 1.5V VCE= 300V; VBE(off)= 1.5V,TC=125℃ 3 12 mA ICBO Collector Cutoff Current VCB= 300V; IC=0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1 mA hFE-1* DC Current Gain IC= 10A ; VCE= 4V 20 hFE-2* DC Current Gain IC= 20A ; VCE= 4V 10 Second Breakdown Collector Current with Base Forward Biased VCE= 140V,t= 1.0s,Nonrepetitive Current Gain-Bandwidth Product IC= 2A ; VCE= 15V;f=1.0MHz Is/b fT CONDITIONS MIN MAX 250 UNIT V 60 0.15 A 10 MHz *:Pulse test PW≤300us,duty cycle≤2% Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc website：www.iscsemi.com IC= 20A ;IB1=-IB2= 2.5A; VCC= 100V; 2 1.3 μs 2.0 μs 0.5 μs isc & iscsemi is registered trademark