Diodes DMTH10H010LCT 100v 175c n-channel enhancement mode mosfet Datasheet

DMTH10H010LCT
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
Features
RDS(ON)
Package
9.5mΩ @VGS = 10V
TO220AB
ID
TC = +25°C
108A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.

Rated to +175°C – Ideal for High Ambient Temperature

Environments
Low Input Capacitance

High BVDSS Rating for Power Application

Low Input/Output Leakage

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications

Motor Control

Backlighting

DC-DC Converters

Power Management Functions

Case: TO220AB

Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram Below

Weight: TO220AB – 1.85 grams (Approximate)
TO220AB
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMTH10H010LCT
Notes:
Case
TO220AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H10H010
= Manufacturer’s Marking
H10H010 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
YYWW
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
1 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMTH10H010LCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.3mH (Note 7)
Avalanche Energy, L=0.3mH (Note 7)
ID
IS
IDM
IAS
EAS
Value
100
±20
108
76
90
92
10
15
Units
V
V
Value
Units
W
°C/W
W
°C/W
°C
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
-55 to +175
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
100
—
—
—
—
—
—
1
±100
V
µA
nA
VGS = 0V, ID = 1mA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
1.4
—
—
1.9
6.9
3.5
9.5
1.3
V
mΩ
V
VDS = VGS, ID = 250 A
VGS = 10V, ID = 13A
VGS = 0V, IS = 13A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
—
—
—
—
—
—
—
—
—
—
—
—
2592
792
45
2
53.7
10.6
8.2
11.6
14.1
42.9
22
49.8
85.1
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
VDS = 50V, VGS = 0V
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 50V, ID = 13A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 13A, RG = 6Ω
ns
nC
IF = 13A, di/dt = 100A/µs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
2 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMTH10H010LCT
30
30
VGS = 10.0V
VGS = 6.0V
VGS = 4.0V
20
VGS = 3.5V
15
10
5
15
TA = 175 C
10
T A = 150 C
T A = 125 C
T A = 85C
T A = 25C
T A = -55C
0
0
0.5
1
1.5
2
2.5
V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )
0.01
0.009
0.008
VGS = 10V
0.007
0.006
0.005
0.004
0.003
0.002
0
5
1
10 15 20 25 30 35 40
ID , DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
45
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
0.02
0.018
0.016
0.014
0.012
0.01
I D = 13A
0.008
0.006
0.004
0.002
50
0
0
0.02
4
8
12
16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2.5
VGS = 10V
0.018
0.016
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
20
5
VGS = 3.0V
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
VDS = 5.0V
25
VGS = 4.5V
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 5.0V
T A = 175 C
0.014
TA = 150 C
0.012
TA = 125 C
T A = 85C
0.01
T A = 25C
0.008
0.006
TA = -55 C
0.004
2
VGS = 10V
I D = 13A
1.5
1
0.002
0
0
5
10
15
20
25
ID , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Junction Temperature
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
30
3 of 6
www.diodes.com
0.5
-50
-25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with
Junction Temperature
March 2016
© Diodes Incorporated
DMTH10H010LCT
4
V GS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on ), DRAIN-SOURCE ON-RESISTANCE ()
0.015
VGS = 10V
0.012
I D = 13A
0.009
0.006
0.003
0
-50
3.5
3
2.5
2
I D = 1mA
I D = 250µA
1.5
1
0.5
0
-50
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with
Junction Temperature
30
-25
0
25 50
75 100 125 150 175
TT
C)
, JUNCTIONTEMPERATURE
TEMPERATURE(°
(°
C)
J,AJUNCTION
Figure 8 Gate Threshold Variation vs.
Junction Temperature
10000
CT, JUNCTION CAPACITANCE (pF)
f=1MHz
IS, SOURCE CURRENT (A)
25
20
15
TA = 125 C
T A= 85 C
TA = 150C
10
TA = 175C
TA = 25 C
5
Ciss
1000
Coss
100
Crss
T A= -55C
10
0
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
0
5
10 15 20 25 30 35 40 45
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
50
1000
10
R DS(on)
Limited
PW = 100µs
100
ID , DRAIN CURRENT (A)
8
VGS (V)
6
4
VDS = 50V, ID = 13A
10
DC
PW = 10s
1
PW = 100ms
TJ(m ax) = 175°C
0.1
2
0.01
0.1
0
0
5
10 15 20 25 30 35 40 45 50 55
Qg (nC)
Figure 11. Gate Charge
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
4 of 6
www.diodes.com
PW = 1s
TA = 25°C
PW = 10ms
PW = 1ms
V GS = 10V
Single Pulse
DUT on 1 * MRP Board
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
March 2016
© Diodes Incorporated
DMTH10H010LCT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R JC (t) = r(t) * R JC
R JC = 0.93°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220AB
E
A
E/2
A1
Ø P
Q
H1
H1
D2
D
E1
L2
D1
L1
A2
L
b2
b
c
e
TO220AB
Dim Min Max Typ
A 3.56 4.82
A1 0.51 1.39
A2 2.04 2.92
b 0.39 1.01 0.81
b2 1.15 1.77 1.24
c 0.356 0.61
D 14.22 16.51
D1 8.39 9.01
D2 11.45 12.87
e
2.54
e1
5.08
E 9.66 10.66
E1 6.86 8.89
H1 5.85 6.85
L 12.70 14.73
L1
6.35
L2 15.80 16.20 16.00
P 3.54 4.08
Q 2.54 3.42
All Dimensions in mm
e1
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
5 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMTH10H010LCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMTH10H010LCT
Document number: DS38444 Rev. 2 - 2
6 of 6
www.diodes.com
March 2016
© Diodes Incorporated